Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

Min Zhu,Kun Ren,Zhitang Song

DOI: https://doi.org/10.1557/mrs.2019.206

IF: 5

2019-09-01

MRS Bulletin

Abstract:Abstract

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Chong Chen,Yiqun Wei,Jianwei Zhao,Xinnan Lin,Zhitang Song

DOI: https://doi.org/10.1109/nvmts.2015.7457430

2015-01-01

Abstract:The snapback effect of amorphous chalcogenide materials has attracted a wide attention. But the mechanism of ovonic threshold switching is still controversial. And two-dimensional model can't simulate device with complicated boundaries. In this paper we developed a three-dimensional numerical model based on trap to band and in-band transition. The simulation results are compared with experimental data.
Chalcogenide Ovonic Threshold Switching Selector

Zihao Zhao,Sergiu Clima,Daniele Garbin,Robin Degraeve,Geoffrey Pourtois,Zhitang Song,Min Zhu

DOI: https://doi.org/10.1007/s40820-023-01289-x

IF: 26.6

2024-01-13

Nano-Micro Letters

Abstract:Highlights The development history and key milestones of ovonic threshold switch (OTS) materials were comprehensively summarized. Combined with the latest advancements of OTS research, the mainstream OTS material systems were systematically introduced. A thorough overview of the prevailing viewpoints regarding the OTS switching mechanisms was presented. Recent progress in OTS devices for applications in 3D memory, self-selecting memory, and neuromorphic computing was summarized.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
High Driving Current Selector Based on As-Implanted HfO 2 Thin Film for 3D Phase Change Memory

Ruobing Wang,Tianqi Guo,Dongning Yao,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1021/acsaelm.1c00980

IF: 4.494

2021-12-29

ACS Applied Electronic Materials

Abstract:A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 106, fast turn on speed, and good endurance (108 switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.

materials science, multidisciplinary,engineering, electrical & electronic
Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Shujing Jia,Huanglong Li,Qi Liu,Zhitang Song,Min Zhu

DOI: https://doi.org/10.1002/pssr.202100084

2021-01-01

Abstract:A two‐terminal selector is an essential element for high‐density 3D stackable memory arrays. Suppressing sneak current, the device also needs to provide extremely high current density to melt‐quench the storage layer in phase‐change memory (PCM). Recently, an ovonic threshold switching (OTS) selector based on amorphous GeS demonstrated a large current density, which seems to be promising for 3D stackable PCM application. Herein, the scalability of GeS OTS selectors is investigated as the device scales down from 200 to 60 nm. Interestingly, the ON/OFF current, threshold voltage, and switching speed hardly change as the device scales down, whereas the ON current density exponentially grows. A large current density, ≈35.4 MA cm−2, is achieved in 60 nm‐sized devices. The high current density endows the GeS selector with great potential for use in high‐density 3D stackable memory applications.
Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Renjie Wu,Yuting Sun,Shuhao Zhang,Zihao Zhao,Zhitang Song

DOI: https://doi.org/10.3390/nano13061114

IF: 5.3

2023-03-21

Nanomaterials

Abstract:The selector is an indispensable section of the phase change memory (PCM) chip, where it not only suppresses the crosstalk, but also provides high on-current to melt the incorporated phase change material. In fact, the ovonic threshold switching (OTS) selector is utilized in 3D stacking PCM chips by virtue of its high scalability and driving capability. In this paper, the influence of Si concentration on the electrical properties of Si-Te OTS materials is studied; the threshold voltage and leakage current remain basically unchanged with the decrease in electrode diameter. Meanwhile, the on-current density (Jon) increases significantly as the device is scaling down, and 25 MA/cm2 on-current density is achieved in the 60-nm SiTe device. In addition, we also determine the state of the Si-Te OTS layer and preliminarily obtain the approximate band structure, from which we infer that the conduction mechanism conforms to the Poole-Frenkel (PF) model.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application

Hao Zhu,Hui Yuan,Haitao Li,Curt A. Richter,Oleg Kirillov,Dimitris E. Ioannou,Qiliang Li

DOI: https://doi.org/10.1109/tnano.2013.2281817

2013-01-01

IEEE Transactions on Nanotechnology

Abstract:In this paper, tantalum pentoxide (Ta$_{2}$O $_{5}$) has been investigated as the charge-storage dielectric for discrete, multibit memory applications. Two Ta$_{2}$O $_{5}$ containing dielectric stacks, Al $_{2}$O$_{3}$/Ta $_{2}$O$_{5}$/SiO $_{2}$ and Al$_{2}$O $_{3}$/Ta$_{2}$O $_{5}$/Al$_{2}$O $_{3}$/Ta$_{2}$O $_{5}$/SiO$_{2}$, have been fabricated and measured. Both structures exhibited excellent nonvolatile memory characteristics: fast program/erase speed with significant flat-band voltage shift at 1 μs, long retention, and good endurance. Interesting multiple staircase memory characteristics observed in the devices with two layers of Ta $_{2}$O$_{5}$ exhibit multiple, discrete charge-storage states. Such an integration of multibit in one cell is very attractive for developing high-density nonvolatile memory.
A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Dongyun Shen,Yiqun Wei,Bin Deng,Yuefeng Gong,Yan Liu,Xinnan Lin,Xiaole Cui,ZhiTang Song

DOI: https://doi.org/10.1109/edssc.2014.7061203

2014-01-01

Abstract:A new physical conductivity model of amorphous chalcogenide is proposed, based on carriers transport theory including hopping transport and trap-to-band transition. A numerical simulator based on this model is developed, and the simulation results agree well with the measurement. The ovonic switch voltage and current with different active area and temperature are studied based on the simulator, and the results show a good consistence with the measurement.
Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Xi Zhou,Liang Zhao,Chu Yan,Weili Zhen,Yinyue Lin,Le Li,Guanlin Du,Linfeng Lu,Shan-Ting Zhang,Zhichao Lu,Dongdong Li

DOI: https://doi.org/10.1038/s41467-023-39033-z

IF: 16.6

2023-06-06

Nature Communications

Abstract:Abstract As a promising candidate for high-density data storage and neuromorphic computing, cross-point memory arrays provide a platform to overcome the von Neumann bottleneck and accelerate neural network computation. In order to suppress the sneak-path current problem that limits their scalability and read accuracy, a two-terminal selector can be integrated at each cross-point to form the one-selector-one-memristor (1S1R) stack. In this work, we demonstrate a CuAg alloy-based, thermally stable and electroforming-free selector device with tunable threshold voltage and over 7 orders of magnitude ON/OFF ratio. A vertically stacked 64 × 64 1S1R cross-point array is further implemented by integrating the selector with SiO 2 -based memristors. The 1S1R devices exhibit extremely low leakage currents and proper switching characteristics, which are suitable for both storage class memory and synaptic weight storage. Finally, a selector-based leaky integrate-and-fire neuron is designed and experimentally implemented, which expands the application prospect of CuAg alloy selectors from synapses to neurons.

multidisciplinary sciences
Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Qing Luo,Xumeng Zhang,Jie Yu,Wei Wang,Tiancheng Gong,Xiaoxin Xu,Jiahao Yin,Peng Yuan,Lu Tai,Danian Dong,Hangbing Lv,Shibing Long,Qi Liu,Ming Liu

DOI: https://doi.org/10.1109/led.2019.2904279

IF: 4.8157

2019-01-01

IEEE Electron Device Letters

Abstract:The 3D crossbar arrays provide a cost-effective approach for high-density integration of resistive switching random-access memory (RRAM). A selector device or self-selective cells can be used to inhibit the sneaking current from the unselected cells. The coexistence of memory switching (MS) with inherent nonlinearity and threshold switching (TS) with highcurrent density in an individual material system will lead to technological benefits for memory integration and neuromorphic computing. However, the reported conductive filament (CF)-type MS and TS combining devices can not meet the requirements for practical applications, as these devices lack built-in nonlinearity in memory mode and display low current density and large relaxing time in the selector mode. In this letter, we report a 3D TiN/TiO2/NbOX/Pt device with MS and TS before and after the forming processes. In the MS mode, this device shows > 50 nonlinearity, a 100 on/off switching due to vacancy redistribution. In the TS mode, owing to the metal-insulator transition, a high ON-state current (1.6 MA/cm (2)), high switching speed (< 40 ns), and low relaxation time(< 50 ns) are observed.
Reversible switching in bicontinuous structure for phase change random access memory application

Yan Cheng,Yonghui Zheng,Zhitang Song

DOI: https://doi.org/10.1039/d0nr09139a

IF: 6.7

2021-01-01

Nanoscale

Abstract:A 3D nano-bicontinuous structure consisting of a reversible Sb 2 Te 3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb 2 Te 3 nano areas switch between the a- and f-structure.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Nonvolatile Memory: Performance‐Enhancing Selector Via Symmetrical Multilayer Design (adv. Funct. Mater. 13/2019)

Yiming Sun,Xiaolong Zhao,Cheng Song,Kun Xu,Yue Xi,Jun Yin,Ziyu Wang,Xiaofeng Zhou,Xianzhe Chen,Guoyi Shi,Hangbing Lv,Qi Liu,Fei Zeng,Xiaoyan Zhong,Huaqiang Wu,Ming Liu,Feng Pan

DOI: https://doi.org/10.1002/adfm.201970081

IF: 19

2019-01-01

Advanced Functional Materials

Abstract:In article number 1808376, Cheng Song, Feng Pan, and co-workers report a high-performance two-terminal selector based on a symmetrical multilayer structure of homogeneous tantalum oxides, possessing bidirectional threshold switching operation, large selectivity, high compliance currents, and tunable threshold voltages. The selector can realize 1S1R read-write functions, thus avoiding crosstalk issues, and is stacked with a memristor. The design might advance practical implementation of two-terminal selectors in the field of emerging memories and neuromorphic computing.
A 3D Resistive Switch Memory with Stackable 1txr Cell

张佶,金钢,吴雨欣,陈怡,林殷茵

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2011.04.005

2011-01-01

Abstract:A novel 3D Resistive Switch Memory concept adopting stackable multi-layer 1TxR memory cell structure for future high density application is proposed.The access transistor fabricated on the top of silicon wafer is shared by several resistors.Resistors are stacked between different metallic layers to form 3D structure.For an 8-layer stacked metallic 1TxR（x=64） as an example,the density is over 280% higher than that of the conventional single layer 1T1R structure.Corresponding operation algorithm is proposed to inhibit effectively mis-write and mis-read caused by leakage current and reduce power consumption.
Monatomic Phase-Change Switch

Xu-Dong Wang,Wei Zhang,En Ma

DOI: https://doi.org/10.1016/j.scib.2022.01.020

IF: 18.9

2022-01-01

Science Bulletin

Abstract:In the 1960s,Stanford Ovshinsky pioneered electrically con-trolled ovonic threshold switching(OTS)and ovonic memory switching(OMS),using amorphous chalcogenide materials[1].As sketched in Fig.1a,under small externally applied voltage bias the"amorphous OFF"state allows only a low electric current,thanks to the highly resistive nature of the glassy material.
Monatomic phase change memory

Martin Salinga,Benedikt Kersting,Ider Ronneberger,Vara Prasad Jonnalagadda,Xuan Thang Vu,Manuel Le Gallo,Iason Giannopoulos,Oana Cojocaru-Mirédin,Riccardo Mazzarello,Abu Sebastian

DOI: https://doi.org/10.1038/s41563-018-0110-9

2019-02-01

Abstract:Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strategy to finetune the properties of phase change memory materials, reaching reasonable thermal stability in optical data storage, relies on mixing precise amounts of different dopants, resulting often in quaternary or even more complicated compounds. Here we show how the simplest material imaginable, a single element (in this case, antimony), can become a valid alternative when confined in extremely small volumes. This compositional simplification eliminates problems related to unwanted deviations from the optimized stoichiometry in the switching volume, which become increasingly pressing when devices are aggressively miniaturized. Removing compositional optimization issues may allow one to capitalize on nanosize effects in information storage.

Applied Physics
Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Yukang Yuan,Zhehao Xu,Sannian Song,Zhitang Song,Ruirui Liu,Jiwei Zhai

DOI: https://doi.org/10.1016/j.apsusc.2023.158362

IF: 6.7

2023-09-04

Applied Surface Science

Abstract:With substantial data storage requirements, enhancing the storage density of emerging non-volatile memories is a common challenge for achieving commercial applications. Phase change memory is capable of multi-level data storage in a storage cell, which can be applied in neural-inspired and all-photonic memory computing. In this study, we propose a MnTe/GeTe stacked thin film structure suitable for multi-level phase change memories and systematically study on the correlation between structure and performance. As the temperature rises, the stacked thin film sequentially crystallizes into form MnTe 2 , GeTe and Te phases, resulting in three changes in resistance. By utilizing different resistance states, the phase change memory cell based on the MnTe (15 nm)/GeTe (35 nm) stacked thin film can achieve multi-level storage with a 50 ns electrical pulse. The results show that the amorphous thermal stability of the stacked thin films is improved and that the minimal thickness variation before and after crystallization enhances its reliability. Therefore, the MnTe/GeTe stacked thin film is a phase change memory material with favorable structural properties and potential for multi-level storage applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

Xinyi Zhu,Longfei He,Yafen Yang,Kai Zhang,Hao Zhu,Lin Chen,Qingqing Sun

DOI: https://doi.org/10.1063/5.0037780

IF: 1.697

2020-01-01

AIP Advances

Abstract:In this work, a prototype of a charge-trapping memory device based on two-dimensional WS2 has been fabricated with an engineered gate stack for multilevel non-volatile memory application. A Si/SiO2/ITO/Al2O3/Ta2O5/Al2O3 stack has been successfully integrated with optimized layer thicknesses for enhanced gate control over the WS2 channel and memory performance. The memory cells exhibited a sufficient memory window, fast programming and erasing speed, and excellent memory retention and endurance. Moreover, stable and discrete memory states have been achieved at small gate voltages. Such excellent memory characteristics originated from the intrinsic properties of the atomically thin WS2 material and the engineered gate stack with clean and robust interfaces. The better thermal stability, higher permittivity, deeper trap level, and relatively smaller bandgap of the Ta2O5 dielectric than other commonly used dielectrics such as SiO2 and Al2O3 also contribute to the memory reliability, which is very attractive for future information and data storage applications.
A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

J. H. Wang,J. Zhou,W. L. Zhou,H. Tong,D. Q. Huang,J. J. Sun,L. Zhang,X. M. Long,Y. Chen,L. W. Qu,X. S. Miao

DOI: https://doi.org/10.1016/j.sse.2012.12.011

IF: 1.916

2013-01-01

Solid-State Electronics

Abstract:A high SET/RESET speed phase change memory cell with a NMOS selector is achieved by optimizing cell structure, material, programming circuit and testing method. An asymmetric T-shape cell structure increases the current density in the programmable region and reduces thermal diffusion in the cell. Super-lattice phase change material has a lower thermal conductivity. The circuit has a fast response and reduces the falling time of RESET pulse to 0.9 ns which enables a fast phase change operation of the memory cell. The testing system has good signal integrity and transmits the undistorted ultrafast programming enable signal to I/O ports of the chip. The optimized SET time is 50 ns and RESET time is 2 ns. (C) 2013 Elsevier Ltd. All rights reserved.
Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Ha‐Jun Sung,Minwoo Choi,Zhe Wu,Hwasung Chae,Sung Heo,Youngjae Kang,Bonwon Koo,Jong‐Bong Park,Wooyoung Yang,Yongyoung Park,Yongnam Ham,Kiyeon Yang,Chang Seung Lee

DOI: https://doi.org/10.1002/advs.202408028

IF: 15.1

2024-10-11

Advanced Science

Abstract:This study explores the mechanism behind polarity‐dependent threshold voltage shifts (ΔVTH) in ovonic threshold switching selectors using amorphous chalcogenides. Through theoretical and experimental analyses, it reveals that the ΔVTH originates from charged Se and cation dimer defect redistribution near electrodes, influenced by nonuniform electric fields, providing insights for optimizing self‐selecting memory devices in 3D memory technology. Ovonic threshold switching (OTS) selectors based on amorphous chalcogenides can revolutionize 3D memory technology owing to their self‐selecting memory (SSM) behavior. However, the complex mechanism governing the memory writing operation limits compositional and device optimization. This study investigates the mechanism behind the polarity‐dependent threshold voltage shift (ΔVTH) through theoretical and experimental analyses. By examining the physical principles of threshold switching and conducting defect state analysis, the ΔVTH as a memory window is confirmed to be attributed to the dynamics of charged defects and their gradient near electrodes, influenced by the nonuniform electric field after threshold switching. This study provides critical insights into the operational mechanism of OTS‐based SSM, known as selector‐only memory, highlighting its advantages for developing high‐density, low‐cost, and energy‐efficient memory technologies in the artificial intelligence era.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material

Surbhi Agarwal,DK Dwivedi,Pooja Lohia,D.K. Dwivedi

DOI: https://doi.org/10.1016/j.jallcom.2024.173773

IF: 6.2

2024-02-18

Journal of Alloys and Compounds

Abstract:Phase change memory (PCM) is an exceptional universal memory innovation that offers qualities like fast speed and non-volatility. But major obstacle still exists in achieving better thermal stability and rapid switching at the same time. Therefore, it is crucial to investigate new materials with enhanced properties. To overcome the contrast of access time between storage systems and memories, storage class memory concept based on emerging nonvolatile memory technology has been introduced. Resistive switching has gained much awareness in last decade due to its application in PCM technologies. Investigation of resistive switching on novel Te (1−x) (GeSe 0.5 )Sc x (x = 0, 0.05, 0.1, 0.15) quaternary alloy has been analyzed in this paper. Material has revealed electrical resistivity contrast of ∼10 3 orders of magnitude that offers better thermal stability than the majority of other phase transition alloys. Additionally, current-voltage (I-V) properties and voltage dependent threshold switching support an incredibly fast threshold switching operation. Switching is observed at 18–30 V and threshold voltage has been noticed to decrease (10–12 V) with increasing temperature. From XPS study, it can be observed that binding energy is shifting towards lower energies by 0.25 eV. Sc makes the GeTeSe parent material appealing for next-generation high-speed, non-volatile, and improved thermal stability memory applications.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Elemental electrical switch enabling phase segregation–free operation

Jiabin Shen,Shujing Jia,Nannan Shi,Qingqin Ge,Tamihiro Gotoh,Shilong Lv,Qi Liu,Richard Dronskowski,Stephen R. Elliott,Zhitang Song,Min Zhu

DOI: https://doi.org/10.1126/science.abi6332

IF: 56.9

2021-12-10

Science

Abstract:Single element switch Phase-change materials are attractive for computer memory and switching, in part due to their small size and fast switching speeds. However, competitive materials frequently have many elements, which decreases the switching reliability. Shen et al . built a pure tellurium device that is capable of fast switching through a phase transformation (see the Perspective by Calarco and Arciprete). Unlike many other phase-change materials, the change in resistance happens because the tellurium melts during the switching process. The resulting device can be switched 100 million times before failure and is an appealing route for avoiding the issues from multi-element phase-change materials. —BG

multidisciplinary sciences

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Chalcogenide Ovonic Threshold Switching Selector

High Driving Current Selector Based on As-Implanted HfO 2 Thin Film for 3D Phase Change Memory

Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability

Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

Reversible switching in bicontinuous structure for phase change random access memory application

Nonvolatile Memory: Performance‐Enhancing Selector Via Symmetrical Multilayer Design (adv. Funct. Mater. 13/2019)

A 3D Resistive Switch Memory with Stackable 1txr Cell

Monatomic Phase-Change Switch

Monatomic phase change memory

Crystallization behavior of MnTe/GeTe stacked thin films for multi-level phase change memory

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material

Elemental electrical switch enabling phase segregation–free operation