First-principles Prediction of the Native Filament: Dielectric Interfaces for the Possible Filamentary Switching Mechanism in Chalcogenide Selector Devices

Huanglong Li,Wenduo Chen

DOI: https://doi.org/10.1063/1.5134916

IF: 2.877

2020-01-01

Journal of Applied Physics

Abstract:Chalcogenide selector devices are key components of the high-density cross-point memory/memristor arrays. However, their threshold switching mechanism remains elusive. Apart from the commonly cited purely electronic models, the filamentary models have recently been supported by experiment. In the context of filamentary switching, we study the native filament:dielectric interfaces in typical selector materials, namely, GeSe and SiTe. Local crystallization induced filaments and electrochemically induced filaments are considered. The filament:dielectric contacts are found to have low n-type and p-type Schottky barriers for GeSe and SiTe, respectively. The filamentary mechanism and purely electronic mechanism can be synergetic: thermal excitation of carriers from the filament to the host dielectric can induce electronic and structural changes of the host dielectric, which may in turn facilitate the growth of filament. This work promotes the understanding of filamentary-type switching in chalcogenide selector devices.