Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Research on the flexible phase change memory devices based on Ge2Sb2Te5/Mg35Sb65 superlattice-like thin films

Flexible Electronics Applications of Ge‐rich and Se‐Substituted Phase‐change Materials in Non‐volatile Memories

Ultra-Stable, Endurable, and Flexible Sb 2 Te x Se 3- x Phase Change Devices for Memory Application and Wearable Electronics

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multi‐layer thin films

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film

Flexible germanium monotelluride phase change films with ultra-high bending stability for wearable piezoresistive sensors

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Ab initio molecular dynamics and materials design for embedded phase-change memory

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Low Thermal Conductivity Phase Change Memory Superlattices

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Ultralow–switching current density multilevel phase-change memory on a flexible substrate