Abstract:Phase-change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase-change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking "nano-bridges" that link up the crystalline domains into a conductive path. This conductive-bridge switching mechanism thus only involves nanometer-scale volume in programming, despite of the large areas in contact with the electrodes. The pore-like devices based on spontaneously phase-separated Ge13 Sb71 O16 alloy enable a record-low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Current Density Enhancement Nano-Contact Phase-Change Memory for Low Writing Current

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Asymmetric Structure with High Electric–thermal Conversion Efficiency for Nanoscale Phase Change Memory Based on Three‐dimensional Simulation

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Asymmetric structure with high electric–thermal conversion efficiency for nanoscale phase change memory based on three-dimensional simulation

Phase-change memory via a phase-changeable self-confined nano-filament

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

RESET Current Reduction for Phase Change Memory Based on Standard 0.13-Μm CMOS Technology

Carbon Layer Application in Phase Change Memory to Reduce Power Consumption and Atomic Migration

Scaling Analysis of Nanowire Phase-Change Memory

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.

Uncovering Phase Change Memory Energy Limits by Sub-Nanosecond Probing of Power Dissipation Dynamics

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Hybrid Program Algorithm Enables Significant Reduction in Write Latency and Power Consumption for Multilevel Phase Change Memory

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Sb7te3/Ge Multilayer Films for Low Power and High Speed Phase-Change Memory

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode