Enhanced Read Performance For Phase Change Memory Using A Reference Column

Yu Lei,Houpeng Chen,Xi Li,Qian Wang,Qi Zhang,Jiajun Hu,Xiaoyun Li,Zhen Tian,Zhitang Song
DOI: https://doi.org/10.1587/elex.14.20170032
2017-01-01
IEICE Electronics Express
Abstract:A reference column is employed to improve the read performance of phase change memory (PCM). In this way, a changeable reference current replaces the constant one; both the reference cell and the selected cell have the same bit line (BL) parasitic parameters and read transmission gate parasitic parameters in the read operation. Simulated in a 40 nm CMOS process, read access time of 4-Mb PCM is 30.65 ns with 190.9 ns improvement. Monte Carlo simulations show a 80.5 ns worst read access time compared to the conventional 1.58 mu s.
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