Abstract:We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Phase Evolution In The Phosphorous-Rich Layer Formation For Snagcu/Ni-P Join

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Phase change memory technology

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Microstructure characterization, phase transition, and device application of phase-change memory materials

Design of Multi-States Storage Medium for Phase Change Memory

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Phase-change memory via a phase-changeable self-confined nano-filament

Si Doping in Ge2Sb2Te5 Film to Reduce the Writing Current of Phase Change Memory

Reduction of write current with improved thermal stability in GeSe 2 doped Sb 2 Te 3 films for Phase Change Memory applications

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

Programming Current Density Reduction for Elevated-Confined Phase Change Memory with a Self-Aligned Oxidation TiWOx Heater

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell