Abstract:Ultralow‐power programmable 3D vertical phase‐change memory devices are demonstrated. The proposed heater‐all‐around device configuration with 3D Joule heater enables ultra‐low operational current through highly localized electro‐thermal heating. Its reliable nonvolatile memory performance and multi‐bit per cell operation highlight the potential of the cell architecture as a universal phase‐change memory device backbone. Recent advancements in phase‐change memory (PCM) technology have predominantly stemmed from material‐level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device‐level electrothermal solutions. Thus, the concept of a 3D heater‐all‐around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed. The embedded thin metallic heater completely encircles the phase‐change material, so it promotes highly localized Joule heating with minimal loss. Hence, a low RESET current density of 6–8 MA cm−2 and operation energy of 150–200 pJ are achieved even for a sizable hole diameter of 300 nm. Beyond the conventional 2D scaling of the bottom electrode contact, it accordingly enhances ≈80% of operational energy efficiency compared to planar PCM with an identical contact area. In addition, reliable memory operations of ≈105 cycles and the 3‐bits‐per‐cell multilevel storage despite ultrathin (<10 nm) sidewall deposition of Ge2Sb2Te5 are optimized. The proposed 3D‐scaled HAA‐PCM architecture holds promise as a universally applicable backbone for emerging phase‐change chalcogenides toward high‐density, ultralow‐power computing units.

Phase Evolution In The Phosphorous-Rich Layer Formation For Snagcu/Ni-P Join

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Phase Evalution in the Phosphorous-rich Layer Formation for SnAgCu/Ni-P Join

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Microstructure characterization, phase transition, and device application of phase-change memory materials

Phase change memory technology

Exploiting nanoscale effects in phase change memories

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Nanoscale Phase-Change Materials And Devices

Tailoring Transient-Amorphous States: Towards Fast and Power-Efficient Phase-Change Memory and Neuromorphic Computing

Phase-change memory via a phase-changeable self-confined nano-filament

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory