Abstract:Ultralow‐power programmable 3D vertical phase‐change memory devices are demonstrated. The proposed heater‐all‐around device configuration with 3D Joule heater enables ultra‐low operational current through highly localized electro‐thermal heating. Its reliable nonvolatile memory performance and multi‐bit per cell operation highlight the potential of the cell architecture as a universal phase‐change memory device backbone. Recent advancements in phase‐change memory (PCM) technology have predominantly stemmed from material‐level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device‐level electrothermal solutions. Thus, the concept of a 3D heater‐all‐around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed. The embedded thin metallic heater completely encircles the phase‐change material, so it promotes highly localized Joule heating with minimal loss. Hence, a low RESET current density of 6–8 MA cm−2 and operation energy of 150–200 pJ are achieved even for a sizable hole diameter of 300 nm. Beyond the conventional 2D scaling of the bottom electrode contact, it accordingly enhances ≈80% of operational energy efficiency compared to planar PCM with an identical contact area. In addition, reliable memory operations of ≈105 cycles and the 3‐bits‐per‐cell multilevel storage despite ultrathin (<10 nm) sidewall deposition of Ge2Sb2Te5 are optimized. The proposed 3D‐scaled HAA‐PCM architecture holds promise as a universally applicable backbone for emerging phase‐change chalcogenides toward high‐density, ultralow‐power computing units.

Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Phase-change memory via a phase-changeable self-confined nano-filament

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

A Nano-Scale-Sized 3d Element for Phase Change Memories

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Multi-level phase-change memory with ultralow power consumption and resistance drift

Phase change memory technology

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Exploiting nanoscale effects in phase change memories

Programming Current Density Reduction for Elevated-Confined Phase Change Memory with a Self-Aligned Oxidation TiWOx Heater

Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory