Abstract:Ultralow‐power programmable 3D vertical phase‐change memory devices are demonstrated. The proposed heater‐all‐around device configuration with 3D Joule heater enables ultra‐low operational current through highly localized electro‐thermal heating. Its reliable nonvolatile memory performance and multi‐bit per cell operation highlight the potential of the cell architecture as a universal phase‐change memory device backbone. Recent advancements in phase‐change memory (PCM) technology have predominantly stemmed from material‐level designs, which have led to fast and durable device performances. However, there remains a pressing need to address the enormous energy consumption through device‐level electrothermal solutions. Thus, the concept of a 3D heater‐all‐around (HAA) PCM fabricated along the vertical nanoscale hole of dielectric/metal/dielectric stacks is proposed. The embedded thin metallic heater completely encircles the phase‐change material, so it promotes highly localized Joule heating with minimal loss. Hence, a low RESET current density of 6–8 MA cm−2 and operation energy of 150–200 pJ are achieved even for a sizable hole diameter of 300 nm. Beyond the conventional 2D scaling of the bottom electrode contact, it accordingly enhances ≈80% of operational energy efficiency compared to planar PCM with an identical contact area. In addition, reliable memory operations of ≈105 cycles and the 3‐bits‐per‐cell multilevel storage despite ultrathin (<10 nm) sidewall deposition of Ge2Sb2Te5 are optimized. The proposed 3D‐scaled HAA‐PCM architecture holds promise as a universally applicable backbone for emerging phase‐change chalcogenides toward high‐density, ultralow‐power computing units.

Programming Current Density Reduction for Elevated-Confined Phase Change Memory with a Self-Aligned Oxidation TiWOx Heater

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Interface Engineering to Enhance Phase Change Memory Programmability

Ultralow‐Power Programmable 3D Vertical Phase‐Change Memory with Heater‐All‐Around Configuration

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching

Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling

Some Solutions for Writing Current Reduction and High Density Application of Phase Change Memory

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

TiWOx Interfacial Layer for Current Reduction and Cyclability Enhancement of Phase Change Memory

Phase-Change Memory With Multifin Thin-Film-Transistor Driver Technology

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

High Driving Current Selector Based on As-Implanted HfO 2 Thin Film for 3D Phase Change Memory

Designing a Multilayered Oxygen Barrier Structure to Tackle Oxidation Challenges in Phase-Change Memory for Improved Reliability

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory