Abstract:Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bias. The surface roughness and morphology of the bottom electrode in these devices were observed by atomic force microscopy. Device size was investigated using high-resolution transmission electron microscopy. More than 100 repeatable consecutive switching cycles were observed for positive-formatted memory devices compared with that of the negative-formatted devices (only five unstable cycles) because it contained an electrically formed interfacial layer that controlled 'SET/RESET' current overshoot. This phenomenon was independent of the switching material in the device. The electrically formed oxygen-rich interfacial layer at the IrOx/high-κx interface improved switching in both via-hole and cross-point structures. The switching mechanism was attributed to filamentary conduction and oxygen ion migration. Using the positive-formatted design approach, cross-point memory in an IrOx/AlOx/W structure was fabricated. This cross-point memory exhibited forming-free, uniform switching for >1,000 consecutive dc cycles with a small voltage/current operation of ±2 V/200 μA and high yield of >95% switchable with a large resistance ratio of >100. These properties make this cross-point memory particularly promising for high-density applications. Furthermore, this memory device also showed multilevel capability with a switching current as low as 10 μA and a RESET current of 137 μA, good pulse read endurance of each level (>105 cycles), and data retention of >104 s at a low current compliance of 50 μA at 85°C. Our improvement of the switching characteristics of this resistive memory device will aid in the design of memory stacks for practical applications.

TiWOx Interfacial Layer for Current Reduction and Cyclability Enhancement of Phase Change Memory

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Phase Change Random Access Memory Featuring Silicide Metal Contact And High-Kappa Interlayer For Operation Power Reduction

Effects of Interface Reaction on the Performance of Alox/Wox Bilayer Resistive Switching Memory

Designing a Multilayered Oxygen Barrier Structure to Tackle Oxidation Challenges in Phase-Change Memory for Improved Reliability

WN coating of TiN electrode to improve the reliability of phase change memory

Programming Current Density Reduction for Elevated-Confined Phase Change Memory with a Self-Aligned Oxidation TiWOx Heater

Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials

Low Thermal Conductivity Phase Change Memory Superlattices

Improvement of Resistive Switching Uniformity for Tio2-Based Memristive Devices by Introducing A Thin Hfo2 Layer

Programmable Complementary Resistive Switching Behaviours of a Plasma-Oxidised Titanium Oxide Nanolayer

Oxygen-ion-migration-modulated Bipolar Resistive Switching and Complementary Resistive Switching in Tungsten/indium Tin Oxide/gold Memory Device

Interface Engineering to Enhance Phase Change Memory Programmability

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Advanced interfacial phase change material: structurally confined and interfacially extended superlattice

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention