Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

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Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Silicides as new electrode/heater for compact integration of phase change memory with CMOS

Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Low Thermal Conductivity Phase Change Memory Superlattices

TiWOx Interfacial Layer for Current Reduction and Cyclability Enhancement of Phase Change Memory

Phase-change memory via a phase-changeable self-confined nano-filament

Significant Power Consumption Reduction and Speed Boosting in Phase Change Memory with Nanocurrent Channels

Thermal Stability and Electrical Resistivity of Sitanx Heating Layer for Phase-Change Memories

A Nano-Scale-Sized 3d Element for Phase Change Memories

One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Memory Switching and Threshold Switching in a 3D Nanoscaled NbO X System

A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Binary Semiconductor In2te3 for the Application of Phase-Change Memory Device