Abstract:Herein, the effect of temperature on the switching characteristics and the conduction mechanism of the Ti/SiN x /Pt resistive random access memory device is investigated. The switching behavior of the device is investigated by comparing the I–V curves of the device in the temperature range of RT‐653 K. The temperature dependence of the current and the conduction mechanism of the device within RT‐463 K is investigated. It is found that the device exhibits good bipolar switching behavior in the temperature range of RT‐463 K, and the low resistance state (LRS) current and high resistance state (HRS) current show an increasing and then decreasing trend with increasing temperature. There is a stronger temperature dependence of the LRS current and the conduction mechanism from ohmic conduction to Schottky emission under LRS, which is attributed to the involvement of the reactive electrode Ti in the reaction at a certain temperature and the generation of a TiN x layer. Based on the above phenomenon, it is believed that not only the temperature affects the reliability of the device, but also the influence of reactive electrodes cannot be ignored. This article provides a reference for further preparation of SiN x ‐based resistive random access memory devices with higher reliability and wider temperature usage range.

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