Temperature Dependence of Phase-Change Random Access Memory Cell

X. S. Miao,L. P. Shi,H. K. Lee,J. M. Li,R. Zhao,P. K. Tan,K. G. Lim,H. X. Yang,T. C. Chong
DOI: https://doi.org/10.1143/jjap.45.3955
IF: 1.5
2006-01-01
Japanese Journal of Applied Physics
Abstract:The temperature dependences of phase-change random access memory (PCRAM) cells oil different Ge-Sb-Te phase-change recording materials are studied and compared. A Ge2Sb2Te5 phase-change film has a larger resistance margin and a higher thermal stability than Ge1Sb2Te4 and Ge1Sb4Te7 films. The set resistance, reset resistance, resistance margin and threshold voltage of PCRAM cells decrease with increasing temperature. A Ge2Sb2Te5 PCRAM cell has a higher thermal stability of threshold voltage than Ge1Sb2Te4 and Ge1Sb4Te7 PCRAM cells.
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