Abstract:The explosive growth in the market of smart mobile phones and other portable electronic devices has attracted the interest of the semiconductor industry in non-volatile memory (NVM) technologies. Phase change memory (PCM), which utilizes the large optical and electrical property contrast between crystalline and amorphous phases of phase change materials to store information, has been considered as a promising candidate for the future NVM device [1]. Recently, Min Zhu et al [2] found that the PCM cell which based on TiSbTe(TST) alloy shows much faster Set operation speed and lower Reset power, compared with Ge2Sb2Te5 with the same size. In the present work, the surface morphology, phase and simulated images of the TST film were obtained using AFM technique. The in-situ annealed TEM morphology analyses were used in combination with the electron-diffraction Radial distribution function (RDF) to investigate the structural evolution from amorphous to the polycrystalline phases [3]. The structural evolution characteristics of the TST films were studied as a function of the annealing temperature. Furthermore, the atomic arrangement and defects of the polycrystalline state were revealed through an advanced Cs-corrected scanning transmission electron microscope (STEM) attached with an energy dispersive X-ray (EDX) spectroscope. In conclusion, our results are valuable for understanding the fast, reversible phase-change process of TST materials and also for designing new memory devices. [1] Wuttig, M. & Yamada, N., Nature Mater. 6 (2007)824–832. [2] M. Zhu et al, Nat. Commun. 5 (2014), 4086. [3] L. Zhang et al, Journal of Alloys and Compounds. 537 (2012) 71–75. B21-P-08 doi:10.1093/jmicro/dfv252

Binary Semiconductor In2te3 for the Application of Phase-Change Memory Device

Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Characteristics of Si-Sb-Te Films for Phase Change Memory

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Pulse Voltage Induced Phase Change Characteristics of the ZnxSbyTez Phase-Change Prototype Device

Novel material for nonvolatile ovonic unified memory (OUM)–Ag11In12Te26Sb51 phase change semiconductor

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Si–Sb–Te films for phase-change random access memory

A Nano-Scale-Sized 3d Element for Phase Change Memories

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Successive crystallization in indium selenide thin films for multi-level phase-change memory

Density dependent local structures in InTe phase-change materials

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Bonding Nature and Optical Contrast of TiTe2/Sb2Te3 Phase-Change Heterostructure

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

B21-P-09The Crystal Micro-Structure Evolution of In-Situ Annealed Phase Change Material TiSbTe Film

Gete4 As A Candidate for Phase Change Memory Application

Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film