Abstract:Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

Correction: Research progress in architecture and application of RRAM with computing-in-memory

Research Progress in Architecture and Application of RRAM with Computing-in-memory (vol 5, Pg 1559, 2023)

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Correction: Application of Carbon-Based Nanomaterials in Alzheimer's Disease.

Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Correction: 12-state multi-level cell storage implemented in a 128 Mb phase change memory chip

Error Correction Scheme for Reliable RRAM-Based In-Memory Computing

Device-Architecture Co-optimization for RRAM-based In-memory Computing.

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

RETROSPECTIVE:PRIME: A Novel Processing-in-memory Architecture for Neural Network Computation in ReRAM-based Main Memory

Correction: Thermoelectric Nanowires for Dense 3D Printed Architectures.

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Correction: Recent advances in integration of 2D materials with soft matter for multifunctional robotic materials

Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

Rescuing RRAM-Based Computing from Static and Dynamic Faults

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Author Correction: Robust Memristors Based on Layered Two-Dimensional Materials

Intelligent Computing with RRAM