Abstract:Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect transistors (FeFETs). A comparative studies of various conventional neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed by successful realization of the proposed computing approaches. Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von-Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are getting developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer a rich set of device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect Transistors (FeFETs). A comparative studies of various unconventional and brain-inspired neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed for these device technologies.

RETROSPECTIVE:PRIME: A Novel Processing-in-memory Architecture for Neural Network Computation in ReRAM-based Main Memory

PRIME: A Novel Processing-in-Memory Architecture for Neural Network Computation in ReRAM-Based Main Memory.

SEAL-lab Technical Report – No . 2015-001 ( November 30 , 2015 ) Processing-in-Memory in ReRAM-based Main Memory

SEAL-lab Technical Report – No . 2015-001 ( April 29 , 2016 ) Processing-in-Memory in ReRAM-based Main Memory

In-Memory Computing: The Next-Generation AI Computing Paradigm

SRAM-based Compute-in-memory: Status and Challenges

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

Computing In-Memory, Revisited

In-memory Computing with Emerging Nonvolatile Memory Devices

A Reduced Architecture for ReRAM-Based Neural Network Accelerator and Its Software Stack

A Mixed-Signal Data-Centric Reconfigurable Architecture Enabled by RRAM Technology (abstract Only).

Cross-layer Designs against Non-ideal Effects in ReRAM-based Processing-in-Memory System

Phase Change Random Access Memory for Neuro‐Inspired Computing

Neuromorphic Computing Systems with Emerging Nonvolatile Memories: A Circuits and Systems Perspective

Device-Architecture Co-optimization for RRAM-based In-memory Computing.

Highly Efficient Neuromorphic Computing Systems with Emerging Nonvolatile Memories

Metal Oxide Resistive Random Access Memory Based Synaptic Devices for Brain-Inspired Computing

Edge AI without Compromise: Efficient, Versatile and Accurate Neurocomputing in Resistive Random-Access Memory

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices

Intelligent Computing with RRAM