Liu Shiqi,Li Jingzhen,Shi Bowen,Zhang Xiuying,Pan Yuanyuan,Ye Meng,Quhe Ruge,Wang Yangyang,Zhang Han,Yan Jiahuan,Xu Linqiang,Guo Ying,Pan Feng,Lu Jing

Abstract:The authors regret that an incorrect description was used in the computational details section. The sentence 'A periodic type, a Neumann type and a Dirichlet type boundary condition are used in the x, y and z directions of the device (Fig. 4), respectively. ' should read ' A Neumann type, a Periodic type and a Dirichlet type boundary condition are used in the x, y and z directions of the device (Fig. 4), respectively. ' The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers. © The Royal Society of Chemistry 2018.

Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

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