Abstract:The two-dimensional (2D) transition-metal dichalcogenides (TMDs) field effect transistor (FET) with in-plane heterojunction contacts between the semiconducting 2H phase (as channel) and the metallic 1T or semimetallic 1T0 phase (as electrode) has received much recent attention because it has significantly reduced contact resistance and enhanced gate tunability and thus improved device performance. However, the underlying mechanism of its good conductivity remains open. We systematically explore for the first time the contact properties of the monolayer (ML) 2H MX2 (MoS2, WS2, MoSe2, WSe2, MoTe2) FET with their 1T0 phase as electrode by using ab initio quantum transport simulations. We find that the metal induced gap states (MIGS) at the interface penetrate the Schottky barrier and bridge the electrodes and the conduction/ valence band of the channel, thereby forming a lower and tunable effective Schottky barrier height (ESBH) and causing an equivalent Ohmic contact under the appropriate gate voltage. Our study provides a new insight into the observed reduced contact resistance with the 1T0 phase as electrode and is instructive for further experiment.

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

Correction: Gate-tunable interfacial properties of in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions

Correction: Chen et al., Orbital Angular Momentum Generation and Detection by Geometric-Phase Based Metasurfaces. Appl. Sci. 2018, 8, 362

Correction: Additive-mediated intercalation and surface modification of MXenes

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Gate-tunable Interfacial Properties of In-Plane ML MX2 1T′–2H Heterojunctions

Enhancement of Nonreciprocal Phase Shift by Using Nanoscale Air Gap: Erratum

Correction: Two-dimensional transition metal carbides and nitrides (MXenes) for biomedical applications

Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Correction: Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers

Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

Correction to "Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide"

Correction to: Nonsymmorphic nodal-line metals in the two-dimensional rare earth monochalcogenides MX (M = Sc, Y; X = S, Se, Te)

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

Correction: Nitride MXenes as sulfur hosts for thermodynamic and kinetic suppression of polysulfide shuttling: a computational study

Correction: Corrigendum: Flexible High-Temperature Dielectric Materials from Polymer Nanocomposites

Correction: Heteroaggregation behavior of graphene oxide on Zr-based metal–organic frameworks in aqueous solutions: a combined experimental and theoretical study

Correction: Control of aggregation and dissolution of small molecule hole transport layers via a doping strategy for highly efficient perovskite solar cells

Correction: Interlayer Exciton Emission in a MoS2/VOPc Inorganic/organic Van Der Waals Heterostructure

Correction: Computational and experimental investigation of TmAgTe2 and XYZ2 compounds, a new group of thermoelectric materials identified by first-principles high-throughput screening