Abstract:One of the most appealing aspects of the two-dimensional transition-metal dichalcogenides (2D-TMDs) is that they have a variety of crystal types, which can exist in three different atomic lattices, 2H, 1 T and 1 T', and can therefore exhibit diverse electronic properties. In addition, 2D-TMD heterostructures with distinctive features can be generated by combining two monolayers either vertically or laterally (in-plane). In this work, we used first-principles calculations to explore the structural and electronic properties of the H-phase MoTe2 monolayer, the T'-phase WTe2 monolayer, and their in-plane heterostructures (H-MoTe2/T'-WTe2). The H-phase MoTe2 monolayer has a band structure with a direct band gap, whereas the 1 T'-WTe2 monolayer is projected to be a Weyl semimetal based on our findings. We constructed a series of five relatively stable in-plane H-MoTe2/T'-WTe2 heterostructures with metal–semiconductor and studied their electronic properties. The band structures of these in-plane heterostructures were shown to be strongly related to the relative orientations of the monolayers at the interface. In particular, the band gaps of the heterostructures joined along the armchair direction were found to be smaller than 0.1 eV. By sewing the MoTe2 and WTe2 monolayers along the zigzag direction, two relatively stable structures were created, with according to the band structure analysis, exhibited metallic characteristics. Surprisingly, band inversion appeared near the Fermi level due to boundary effects. Therefore, topological properties may be present in such in-plane heterostructures. Moreover, some of these in-plane H-MoTe2/T'-WTe2 heterostructures have effective Schottky barrier heights smaller than 0.25 eV for holes, and could thus be used to construct field effect transistors (FETs). We also found that the effective Schottky barrier height was largely determined by the interfacial bonding environment, the external electric field, and uniaxial strains. Our findings enrich the diversity of the 2D-TMDs heterostructures and point to a viable approach for the design of high-performance electronic and optoelectronic devices.

Gate-tunable Interfacial Properties of In-Plane ML MX2 1T′–2H Heterojunctions

Gate-tunable interfacial properties of in-plane ML MX2 1T0-2H heterojunctions

Correction: Gate-tunable interfacial properties of in-plane ML MX<sub>2</sub> 1T′–2H heterojunctions

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

Proximity Exchange Induced Gap Opening and Topological Feature in Graphene/1t'-Mx2 (M = Mo, W; X = S, Se, Te) Dirac Heterostructures

The Interfacial Properties of Monolayer MX–Metal Contacts

Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′-2H heterojunctions (Journal of Materials Chemistry C (2018) DOI: 10.1039/c8tc01106k)

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

Interfacial properties of In-plane monolayer 2H-MoTe2/1T'-WTe2 heterostructures

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

N-Type Ohmic Contact and P-Type Schottky Contact of Monolayer InSe Transistors

Controllable Schottky Barriers and Contact Types of BN Intercalation Layer in Graphene/MoSi2As4 vdW Heterostructures via Applying External Electrical Field

Achieving ultra-low contact barriers in MX2/SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction

First principles studies on the electronic and contact properties of single layer 2H-MoS 2 /1T′-MX 2 heterojunctions

First-Principles Study of the Schottky Contact, Tunneling Probability, and Optical Properties of MX/TiB 4 Heterojunctions (M = Ge, Sn; X = S, Se, Te): Strain Engineering Tunability

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Interfacial properties in planar SiC/2D metals from first principles

Engineering Schottky-to-Ohmic contact transition for 2D metal–semiconductor junctions