Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]

Nian-Ke Chen,Xian-Bin Li,Xue-Peng Wang,Sheng-Yi Xie,Wei Quan Tian,Shengbai Zhang,Hong-Bo Sun
DOI: https://doi.org/10.1109/TNANO.2018.2823098
2018-01-01
IEEE Transactions on Nanotechnology
Abstract:Presents corrections to the paper, “Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study,” (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018.
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