Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Zhiliang Chen,Yu Yu,Lufan Jin,Yifan Li,Qingyan Li,Tengteng Li,Jie Li,Hongliang Zhao,Yating Zhang,Haitao Dai,Jianquan Yao
DOI: https://doi.org/10.1039/d0tc90273j
IF: 6.4
2021-01-01
Journal of Materials Chemistry C
Abstract:Correction for ‘Broadband photoelectric tunable quantum dot based resistive random access memory’ by Zhiliang Chen et al. , J. Mater. Chem. C , 2020, 8 , 2178–2185, DOI: 10.1039/C9TC06230K.
materials science, multidisciplinary,physics, applied
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