Research Progress in Architecture and Application of RRAM with Computing-in-memory (vol 5, Pg 1559, 2023)

Chenyu Wang,Ge Shi,Fei Qiao,Rubin Lin,Shien Wu,Zenan Hu

DOI: https://doi.org/10.1039/d3na90030d

IF: 5.598

2023-01-01

Nanoscale Advances

Abstract:Correction for 'Research progress in architecture and application of RRAM with computing-in-memory' by Chenyu Wang et al., Nanoscale Adv., 2023, https://doi.org/10.1039/d3na00025g.

What problem does this paper attempt to address?

Correction: Research progress in architecture and application of RRAM with computing-in-memory

Chenyu Wang,Ge Shi,Fei Qiao,Rubin Lin,Shien Wu,Zenan Hu

DOI: https://doi.org/10.1039/d3na90030d

IF: 5.598

2023-01-01

Nanoscale Advances

Abstract:Correction for ‘Research progress in architecture and application of RRAM with computing-in-memory’ by Chenyu Wang et al. , Nanoscale Adv. , 2023, https://doi.org/10.1039/d3na00025g.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Yandong Luo,Wenchao Chen,Mingzhuo Cheng,Kai Kang,Wen-Yan Yin

DOI: https://doi.org/10.1109/imws-amp.2016.7588366

2016-01-01

Abstract:Memory is very important in the present era of Internet of Thing (IoT) and Big Data, while Resistive Random Access Memory (RRAM) is a key member in the family of non-volatile memory. However, in the development of high density RRAM memory array, self-heat effect (SHE) as well as thermal crosstalk must be understood and controlled during its operation. In this paper, simulation of electrothermal effects in both single RRAM cell and 3×3×3 array are performed using our in-house developed algorithm, which is validated in comparison with that of commercial software COMSOL. Further on, hybrid effects of different geometrical and material parameters on the memory performance are characterized and addressed.
Device-Architecture Co-optimization for RRAM-based In-memory Computing.

Yimao Cai,Yi Gao,Zongwei Wang,Lin Bao,Ling Liang,Qilin Zheng,Cuimei Wang,Ru Huang

DOI: https://doi.org/10.1109/ASICON58565.2023.10396275

2023-01-01

Abstract:In the pursuit of high energy-efficiency computing solutions, RRAM-based in-memory computing (IMC) technology has emerged as a promising contender, offering notable advantages such as exceptional memory density, computing parallelism, and energy-efficiency. In this paper, we present a review of our optimization endeavors in RRAM-based IMC systems, spanning from the intricate device-level considerations to the overarching architectural aspects, highlighting the challenges and opportunities of this technology.
RETROSPECTIVE:PRIME: A Novel Processing-in-memory Architecture for Neural Network Computation in ReRAM-based Main Memory

Ping Chi,Shuangchen Li,Conglei Xu,Zhang Tao,Jishen Zhao,Yongpan Liu,Yu Wang,Yuan Xie

2023-01-01

Abstract:This paper was originally published in ISCA 2016. One notable event during that ISCA was the inauguration of the Architecture 2030 Workshop [1], led by visionary leaders within our community. This workshop provided a platform for envisioning the trajectory of our field and discussing future challenges and opportunities. During this workshop, I had the privilege of presenting my vision on ”Technology-driven Architecture Innovation: Challenges and Opportunities.” To exemplify the potential for novel architecture designs, I highlighted this ISCA 2016 paper, showcasing the possibilities that arise from combining emerging applications such as AI with cutting-edge technologies like ReRAM. The workshop resulted in a report that outlines the collective vision of computer architecture research for the next 15 years, highlighting five high-potential directions: specialized accelerator design, cloud computing, 3D stacked architecture, technology-driven architecture (e.g., new memory, quantum, etc.), and machine learning as a key workload. Remarkably, our ISCA 2016 paper serves as an excellent illustrative example of three out of these five directions: emerging memory technology, domain-specific accelerators, and machine learning workloads.
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Zongjie Shen,Chun Zhao,Yanfei Qi,Wangying Xu,Yina Liu,Ivona Z. Mitrovic,Li Yang,Cezhou Zhao

DOI: https://doi.org/10.3390/nano10081437

IF: 5.3

2020-07-23

Nanomaterials

Abstract:Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

Yuyi Liu,Bin Gao,Jianshi Tang,Huaqiang Wu,He Qian

DOI: https://doi.org/10.1007/s11432-023-3785-8

2023-01-01

Abstract:Computation-in-memory (CIM) chips offer an energy-efficient approach to artificial intelligence computing workloads. Resistive random-access memory (RRAM)-based CIM chips have proven to be a promising solution for overcoming the von Neumann bottleneck. In this paper, we review our recent studies on the architecture-circuit-technology co-optimization of scalable CIM chips and related hardware demonstrations. To further minimize data movements between memory and computing units, architecture optimization methods have been introduced. Then, we propose a device-architecture-algorithm co-design simulator to provide guidelines for designing CIM systems. A physics-based compact RRAM model and an array-level analog computing model were embedded in the simulator. In addition, a CIM compiler was proposed to optimize the on-chip dataflow. Finally, research perspectives are proposed for future development.
Intelligent Computing with RRAM

Peng Yao,Wenqiang Zhang,Meiran Zhao,Yudeng Lin,Wei Wu,Bin Gao,He Qian,Huaqiang Wu

DOI: https://doi.org/10.1109/imw.2019.8739764

2019-01-01

Abstract:RRAM-based in-memory-computing is a promising approach to go beyond von Neumann architecture and attributes to remarkable improvement in power efficiency and performance density. In this work, we examine our developments in device optimization for high-linearity SET/RESET updating and analyze the device reliability issues. We further exhibit the experimental demonstrations for the perceptron and generative adversarial network (GAN), showing how to combine algorithms and non-idea devices together. An end-to-end simulator was set up to evaluate the system performance (the accuracy, latency and energy) with actual device performance. Lastly, we provide a guideline for array size optimization.
Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Jinfeng Kang,Peng Huang,Haitong Li,Bin Gao,Yudi Zhao,Runze Han,Zheng Zhou,Zhe Chen,Chen Liu,Lifeng Liu,Xiaoyan Liu

DOI: https://doi.org/10.1109/icsict.2016.7998875

2016-01-01

Abstract:Oxide-based resistive random access memory (RRAM) has been widely studied as the promising candidate for the applications of next generations of data storage and computing technologies. In this paper, we will discuss the physical mechanism and optimization design of oxide-based RRAM devices, the novel RRAM-based computing/memory unifying architectures and the applications for data storage and computing technologies.
Error Correction Scheme for Reliable RRAM-Based In-Memory Computing

Yixuan Hu,Kaili Cheng,Zuodong Zhang,Runsheng Wang,Yuan Wang,Ru Huang

DOI: https://doi.org/10.1109/EDTM50988.2021.9420944

2021-01-01

Abstract:Since conventional Hamming-code-based memory error correction scheme cannot be used for in-memory-computing circuits based on resistive random access memory (RRAM), we propose an error correction scheme using an arithmetic code of AN code that can correct the arithmetic errors by the maximum probability to improve the accuracy of dot product. When applied to a convolutional neural network on the MNIST datasets, the proposed error correction scheme largely reduces the accuracy loss.
Resistive Random Access Memory for Future Information Processing System.

Huaqiang Wu,Xiao Hu Wang,Bin Gao,Ning Deng,Zhichao Lu,Brent Haukness,Gary Bronner,He Qian

DOI: https://doi.org/10.1109/jproc.2017.2684830

IF: 20.6

2017-01-01

Proceedings of the IEEE

Abstract:Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile memory (NVM), and storage class memory (SCM) due to its speed, density, cost, and scalability. Considerable progress has been made in recent years on the manufacturability of RRAM, with low-density RRAM products now in production and the path to higher density parts becoming clearer. This review updates the learning on the fundamental materials and process integration needed for high-volume manufacturing and summarizes very recent progress on array level performance improvement methodology using novel techniques, and circuit level contributions for different applications. The device performance, array integration, and device/circuit codesign for memory systems are discussed. Novel applications besides embedded memory and standalone memory are addressed, including hardware security, neuromorphic computing, and nonvolatile logic systems.
Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

Writam Banerjee,Qi Liu,Shibing Long,Hangbing Lv,Ming Liu

DOI: https://doi.org/10.1088/1361-6463/aa7572

2017-01-01

Abstract:The attractive usability of quantum phenomena in futuristic devices is possible by using zerodimensional systems like nanocrystals (NCs). The performance of nonvolatile flash memory devices has greatly benefited from the use of NCs over recent decades. The quantum abilities of NCs have been used to improve the reliability of flash devices. Its appeal is extended to the design of emerging devices such as resistive random- access memory (RRAM), a technology where the use of silicon is optional. Here, we are going to review the recent progress in the design, characterization, and utilization of NCs in RRAM devices. We will first introduce the physical design of the RRAM devices using NCs and the improvement of electrical performance in NC-RRAM over conventional ones. In particular, special care has been taken to review the ways of development provided by the NCs in the RRAM devices. In a broad sense, the NCs can play a charge trapping role in the NC-RRAM structure or it can be responsible for the localization and improvement of the stability of the conductive filament or it can play a part in the formation of the conductive filament chain by the NC migration under applied bias. Finally, the scope of NCs in the RRAM devices has also been discussed.
Memory That Never Forgets: Emerging Nonvolatile Memory and the Implication for Architecture Design

Guangyu Sun,Jishen Zhao,Matt Poremba,Cong Xu,Yuan Xie

DOI: https://doi.org/10.1093/nsr/nwx082

IF: 20.6

2018-01-01

National Science Review

Abstract:In order to mitigate the problem of the 'memory wall', various emerging nonvolatile memory (NVM) technologies have been proposed to replace the traditional ones. These emerging NVMs include spin torque transfer random access memory, PCRAM, resistive random access memory, racetrack memory, etc. Compared to traditional memory technologies, they have the advantages of near-zero standby power, high storage density and nonvolatility, which make them competitive for future memory hierarchy design. However, it is inefficient to directly apply these NVMs in existing memory architectures. On the one hand, these NVMs have their own limitations, such as long write latency, high write energy, limited write numbers, etc. Thus, proper architecture modification is required to adopt them into the traditional memory hierarchy. On the other hand, the unique features of these NVMs allow new memory architectures in memory subsystems and also introduce new challenges to be solved at the same time. In this paper, we not only review various emerging NVMs but also study typical related work on these topics to investigate their implications for memory architecture design.
Recent Progress in Resistive Random Access Memories: Materials, Switching Mechanisms, and Performance

F. Pan,S. Gao,C. Chen,C. Song,F. Zeng

DOI: https://doi.org/10.1016/j.mser.2014.06.002

2014-01-01

Abstract:This review article attempts to provide a comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs). First, a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMs over the past decade. Second, both inorganic and organic materials used in RRAMs are summarized, and their respective advantages and shortcomings are discussed. Third, the important switching mechanisms are discussed in depth and are classified into ion migration, charge trapping/de-trapping, thermochemical reaction, exclusive mechanisms in inorganics, and exclusive mechanisms in organics. Fourth, attention is given to the application of RRAMs for data storage, including their current performance, methods for performance enhancement, sneak-path issue and possible solutions, and demonstrations of 2-D and 3-D crossbar arrays. Fifth, prospective applications of RRAMs in unconventional computing, as well as logic devices and multi-functionalization of RRAMs, are comprehensively summarized and thoroughly discussed. The present review article ends with a short discussion concerning the challenges and future prospects of the RRAMs.
Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Dongbin Zhu,Yi Li,Wensheng Shen,Zheng Zhou,Lifeng Liu,Xing Zhang

DOI: https://doi.org/10.1088/1674-4926/38/7/071002

2017-01-01

Journal of Semiconductors

Abstract:The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials, switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
Design And Optimization Methodology For 3d Rram Arrays

Yexin Deng,Hong-Yu Chen,Bin Gao,Shimeng Yu,Shih-Chieh Wu,Liang Zhao,Bing Chen,Zizhen Jiang,Xiaoyan Liu,Tuo-Hung Hou,Yoshio Nishi,Jinfeng Kang,H. -S. Philip Wong

DOI: https://doi.org/10.1109/IEDM.2013.6724693

2013-01-01

Abstract:3D RRAM arrays are studied at the device-and architecture-levels. The memory cell performance for a horizontal cross-point is shown experimentally to be essentially comparable to vertical pillar-around geometry. Array performances (read/write, energy, and speed) of different 3D architectures are investigated by SPICE simulation, showing horizontal stacked RRAM is superior but suffers from higher bit cost. Adopting a bi-layer pillar electrode structure is demonstrated to enlarge the array size in 3D vertical RRAM. Design guidelines are proposed for the 3D VRRAM: it shows that increasing the number of stacks of VRRAM while keeping the total bits the same, as well as scaling of feature size (F), are critical for reducing RC delay and energy consumption.
A Logic-Process Compatible RRAM with 15.43 Mb/mm<sup>2</sup> Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall

Qishen Wang,Yuhang Yang,Zongwei Wang,Shengyu Bao,Jingwei Sun,Linbo Shan,Lin Bao,Yi Gao,Haisu Zhang,Yaotian Ling,Wuzhi Zhang,Yansheng Wang,Yimao Cai,Ru Huang

DOI: https://doi.org/10.1109/IEDM45741.2023.10413885

2023-01-01

Abstract:We have successfully demonstrated, for the first time, the STI-less dynamic-gate (DG) technique with self-passivation sidewall (SPS) enhanced RRAM cells on a commercial 40nm CMOS production platform. This achievement resulted in a record-density of 15.43 Mb/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a high retention of 10years@150°C. Through a comprehensive design-technology co-optimization (DTCO) process, we obtain significant improvements in various key characteristics, as evidenced by experimental results at both the wafer (12-inch) and chip (4K&1M) level. These improvements include improved memory window (>20μA), enhanced uniformity, extended retention (10years@150°C), and multilevel cell (MLC>3bit). This work indicates the potential of RRAM as embedded non-volatile memory (eNVM) in advanced technology node for consumer and industrial applications.
Memory Materials and Devices: from Concept to Application

Zhenhan Zhang,Zongwei Wang,Tuo Shi,Chong Bi,Feng Rao,Yimao Cai,Qi Liu,Huaqiang Wu,Peng Zhou

DOI: https://doi.org/10.1002/inf2.12077

2020-01-01

InfoMat

Abstract:Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate-induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high-performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two-dimensional material-based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase-change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review. image
Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

Chunmeng Dou,Xiaoxin Xu,Xumeng Zhang,Linfang Wang,Wang Ye,Junjie An,Jianguo Yang,Qing Luo,Tuo Shi,Jing Liu,Dashan Shang,Feng Zhang,Qi Liu,Ming Liu

DOI: https://doi.org/10.1109/iedm19574.2021.9720546

2021-01-01

Abstract:In this work, we discussed the critical challenges, key enabling techniques, and future trends on developing RRAM-based brain-inspired computation, including computing-in-memory (CIM) and neuromorphic computing (NC), from device, circuit to system. To suppress the device non-idealities in the synaptic array, we proposed using optimized bit-cell design and computing approach to reduce the errors and power of the analogue multiply-and-accumulate (MAC). To lower the neuron power, we proposed the sparsity-aware analog-to-digital converter (ADC) for artificial neural networks (ANNs) and highlighted the energy- and area-efficient bio-plausible neurons based on NbO x devices for spiking neural networks (SNNs). On this basis, we introduce several RRAM CIM designs, followed by a discussion on the remaining challenges and future trends.
Carbon-based Memristors for RRAM and Neuromorphic Applications

Fan Yang,Zhaorui Liu,Xumin Ding,Yang Li,Cong Wang,Guozhen Shen

DOI: https://doi.org/10.1016/j.chip.2024.100086

2024-01-01

Chip

Abstract:As a typical representative of nanomaterials, carbon nanomaterials have attracted widespread attention in the construction of electronic devices due to their unique physical and chemical properties, multi-dimensionality, multi-hybridization methods and excellent electronic properties. Especially in recent years, memristors based on carbon nanomaterials have flourished in the field of building non-volatile memory devices and neuromorphic applications. In this paper, the preparation methods and structural characteristics of carbon nanomaterials of different dimensions are systematically reviewed. Then, the structural characteristics and working mechanism of memristors based on carbon nanomaterials of different dimensions are discussed in depth. Finally, the potential applications of carbon-based memristors in logic operations, neural network construction, artificial vision systems, artificial tactile systems, and multimodal perception systems are introduced. We believe this paper will provide guidance for the future development of high-quality information storage, high-performance neuromorphic applications, and high-sensitivity bionic sensing based on carbon-based memristors.
Study of Resistive Properties and Neural Response of Zro2/Tio2 Heterojunction Nanowire Array (nwa) Rram

Tangyou Sun,Zubin Qin,Fantao Yu,Shuai Gao,Peihua Wangyang,Xiaosheng Tang,Haiou Li,Fabi Zhang,Zhimou Xu,Ping Cai,Chunsheng Jiang,Xiaogang Xue

DOI: https://doi.org/10.1016/j.apsusc.2024.161150

IF: 6.7

2025-01-01

Applied Surface Science

Abstract:Nowadays, the researcher has an eye on enhancing the performance of resistive random-access memory (RRAM) and exploring new demands and applications, particularly in the field of artificial intelligence and neural computing. It is crucially important for accurately replicating the observed plasticity within synapses to achieve superior RRAM performance in low-dimensional nanomaterials. In this work, we focus on addressing certainly unsatisfactory electrical properties of RRAM based on titanium oxide nanowire array (TiO2 NWA), for example, short retention time (similar to 10(3) s). Theoretically and experimentally, a novel and solution-based RRAM structure, namely ZrO2/TiO2(NWA), has been conducted. With the help of the ZrO2 insertion layer, the RRAM device shows impressive resistive switching characteristics, including 200 current-voltage(I-V) sweeps without degradation, increased cycling endurance (>10(5) cycles), and a long retention time (similar to 9 x 10(4) s). These findings hold significant implications for digital computing systems. Moreover, the successful implementation of the proposed device enables the emulation of fundamental synaptic biological features such as non-linear transmission properties, learning experiences behavior, short-term potentiation (STP) and long-term potentiation (LTP). This research provides evidence of the immense potential of the Ag/ZrO2/TiO2(NWA)/FTO RRAM device in bipolar non-volatile memory (NVM) and biomimetic neuromorphic systems.

Research Progress in Architecture and Application of RRAM with Computing-in-memory (vol 5, Pg 1559, 2023)

Correction: Research progress in architecture and application of RRAM with computing-in-memory

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Device-Architecture Co-optimization for RRAM-based In-memory Computing.

RETROSPECTIVE:PRIME: A Novel Processing-in-memory Architecture for Neural Network Computation in ReRAM-based Main Memory

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Architecture-circuit-technology Co-Optimization for Resistive Random Access Memory-Based Computation-in-memory Chips

Intelligent Computing with RRAM

Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures

Error Correction Scheme for Reliable RRAM-Based In-Memory Computing

Resistive Random Access Memory for Future Information Processing System.

Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

Memory That Never Forgets: Emerging Nonvolatile Memory and the Implication for Architecture Design

Recent Progress in Resistive Random Access Memories: Materials, Switching Mechanisms, and Performance

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Design And Optimization Methodology For 3d Rram Arrays

A Logic-Process Compatible RRAM with 15.43 Mb/mm<sup>2</sup> Density and 10years@150°C retention using STI-less Dynamic-Gate and Self-Passivation Sidewall

Memory Materials and Devices: from Concept to Application

Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System

Carbon-based Memristors for RRAM and Neuromorphic Applications

Study of Resistive Properties and Neural Response of Zro2/Tio2 Heterojunction Nanowire Array (nwa) Rram