Abstract:Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for next-generation memory in the era of Big Data. The phase transition mechanism of phase change materials is the key scientific issue to be addressed for phase change memory. Moreover, obtaining homogeneous phase change materials with high speed, low power consumption, long life and good thermal stability is still the ultimate challenge for high-density three-dimensional (3D) PCRAM. In this paper, starting from the octahedral structure motifs (octahedrons) which are considered as the "gene" of phase change materials, a new view on the phase transition mechanism is proposed. Based on this mechanism, a homogeneous phase change material is developed by constructing three matched octahedrons, which achieved an overall improvement in performance, showing 180 °C ten-year data retention, 6 ns SET speed, one order of magnitude longer life time and 75% reduced power consumption compared with traditional Ge2Sb2Te5 (GST) devices. It is of great significance to use it in 3D PCRAM chip and multi-level brain-inspired computing chip in the future.

Multi‐bit Storage in Reset Process of Phase Change Access Memory (PRAM)

Fullerene Thermal Insulation for Phase Change Memory

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Design of Multi-States Storage Medium for Phase Change Memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Optimal Design of Phase Change Random Access Memory Based on 130nm Cmos Technology

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Sb 7 Te 3 /znsb Multilayer Thin Films for High Thermal Stability and Long Data Retention Phase-Change Memory

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Multi-step Phase-Change Behavior in Ga30Sb70/SnSe2 Nanocomposite Multilayer Thin Films

Preparation and Properties of Phase Change Memory Cell with Asymmetric Structure

Analysis of Influencing Factors on Multilevel Storage Performance in Phase-Change Random Access Memory

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure