High-Reliable Multi-Level Phase Change Memory With Bipolar Selectors

Le Xu,YuFeng Xie,Yinyin Lin

DOI: https://doi.org/10.1109/ASICON.2009.5351523

2009-01-01

Abstract:This paper proposed a novel 2B2R (two bipolar transistors& two phase change resistors) cell structure and a ratio-based state definition scheme for 3-value N-doped Ge2Se2Te5 phase change memory, and realized high density and high reliable phase change storage(1).

What problem does this paper attempt to address?

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

XU Le,XIE Yu-feng,LIN Yin-yin

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2010.02.010

2010-01-01

Abstract:A 2B2R structure using complementary memory cells and bipolar transistors has been designed.Utilizing the three-level feature of PCR (Phase Change Resistor) and using the ratio definition of states,it realizes four-level storage.In this scheme,the phase change memory has reached the density of 1T1R four-level storage without the increasing of chip area.The influence of process variation on the reading operation has been optimized.The advantages of small area,high reliability and high density have been combined.All these issues will make phase change memory more competitive and promising in the high-density and high-reliability applications.
Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

LIU Xin,ZHOU Peng,LIN Yin-yin,TANG Ting-ao,LAI Yun-feng,QIAO Bao-wei,FENG Jie,CAI Bing-cu,Bomy Chen

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2008.01.018

2008-01-01

Abstract:Two approaches are proposed for multilevel storage based on phase change technology.The steady intermediate levels between the conventional amorphous state and crystalline state of Chalcogeinide are realized by changing the structure or material of the cell based on.In comparison with the conventional implementation of multi-level storage,the approaches proposed increase the reliability,signal-to-noise,storage density,and significantly simplify peripheral circuits.They will be promising for potential application.
A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

HONG Yang,LIN Yin-yin,TANG Ting-ao

DOI: https://doi.org/10.3969/j.issn.0427-7104.2006.01.011

2006-01-01

Abstract:A novel ratio-oriented definition based on 2T2R (two transistors & two phase change resistors(PCR)) phase change memory(PCM) cell structure is proposed to gain a high density by multilevel storage.In this novel solution,no reference is needed and superb reliability remains still as conventional 2T2R,which is crucial when feature size scales to nanometer technology node.A behavioral SPICE model together with a preliminary simulation proves the idea to be feasible,and further optimization has been carried out.In addition,based on the ratio-oriented definition,a simpler and faster Error Correction Codes(ECC) can be realized with All-Error-Detection(AED) feasible.
Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Yang Hongxin,Luping Shi,Lee Hock Koon,Zhao Rong,Minghua Li,Jianming Li,Lim Kian Guan,Chong Tow Chong

DOI: https://doi.org/10.1149/2.0151512jss

IF: 2.2

2015-01-01

ECS Journal of Solid State Science and Technology

Abstract:Lateral phase change memory (PCM) has attracted a lot of interest due to its simpler fabrication process and lower current. Researchers are trying to increase the storage capacity of lateral PCM. This paper proposed a novel super-lattice like (SLL) structure for lateral PCM to achieve multi-level storage. Lateral PCM with SLL structure incorporated with N-doped Sb70Te30 and ZnS-SiO2 has been fabricated and tested. Both tested static I-V curve and dynamic pulse mode R-V curve show multi states existing in the device. Electrical and thermal simulations have been done for this device. Simulation results show that different resistance level can be found in this device with different states of phase change bridges. With increasing periods of SLL structure, more states can be achieved.
Multilevel optoelectronic hybrid memory based on N-doped Ge2Sb2Te5 film with low resistance drift and ultrafast speed

Ben Wu,Tao Wei,Jing Hu,Wanfei Wang,Qianqian Liu,Miao Cheng,Wanfei Li,Yun Ling,Bo Liu

DOI: https://doi.org/10.1088/1674-1056/ace765

2023-01-01

Chinese Physics B

Abstract:Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed, scalable and non-volatile characteristics. However, the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory. Here, N-doped Ge2Sb2Te5-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed. The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout. Results show that when N content is 27.4 at.%, N-doped Ge2Sb2Te5 film possesses high ten-year data retention temperature of 175 degrees C and low resistance drift coefficient of 0.00024 at 85 degrees C, 0.00170 at 120 degrees C, and 0.00249 at 150 degrees C, respectively, owing to the formation of Ge-N, Sb-N, and Te-N bonds. The SET/RESET operation speeds of the film reach 520 ps/13 ps. In parallel, the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude. Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients. Therefore, the N-doped Ge2Sb2Te5 thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.
Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Xilin Zhou,Mengjiao Xia,Feng Rao,Liangcai Wu,Xianbin Li,Zhitang Song,Songlin Feng,Hongbo Sun

DOI: https://doi.org/10.1021/am503502q

IF: 9.5

2014-01-01

ACS Applied Materials & Interfaces

Abstract:Phase-change materials are highly promising for next-generation nonvolatile data storage technology. The pronounced effects of C doping on structural and electrical phase-change behaviors of Ge2Sb2Te5 material are investigated at the atomic level by combining experiments and ab initio molecular dynamics. C dopants are found to fundamentally affect the amorphous structure of Ge2Sb2Te5 by altering the local environments of Ge-Te tetrahedral units with stable C-C chains. The incorporated C increases the amorphous stability due to the enhanced covalent nature of the material with larger tetrahedral Ge sites. The four-membered rings with alternating atoms are reduced greatly with carbon addition, leading to sluggish phase transition and confined crystal grains. The lower RESET power is presented in the PCM cells with carbon-doped material, benefiting from its high resistivity and low thermal conductivity.
Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Liu Liu,Anding Li,Yukun Chen,Ruirui Liu,Jiayue Xu,Jiwei Zhai,Zhitang Song,Sannian Song

DOI: https://doi.org/10.1088/1361-6463/ad6a25

2024-08-03

Journal of Physics D Applied Physics

Abstract:This study delves into the phase-change properties of the multilayer [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1, unveiling three distinct resistance states. These states arise from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, succeeded by the transformation of Ge2Sb2Te5-FCC to Ge2Sb2Te5-HEX with additional Sb precipitation. The [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1-based PCRAM device showcases reversible switching characteristics and multi-level storage capabilities within a mere 20 ns, indicating enhanced phase-change speed and storage density. Furthermore, [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1 exhibits superior thermal stability and more steadfast data retention compared to conventional Ge2Sb2Te5. These findings offer crucial insights for advancing high-performance PCRAM devices.

physics, applied
Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Liwei Zhang,Xianliang Mai,Rongchuan Gu,Long Liu,Changying Xiong,Zhe Yang,Hao Tong,Xiaomin Cheng,Ming Xu,Peng Zhou,Xiangshui Miao

DOI: https://doi.org/10.1002/aelm.202100164

IF: 6.2

2021-01-01

Advanced Electronic Materials

Abstract:Phase‐change memory (PCM), using the fast and reversible transition between crystal and glass to store binary data, is a promising candidate for next‐generation information storage and computing technologies. Recording more than one bit of information on each memory cell, known as multilevel cell (MLC) technology, can greatly increase the data density of PCMs. In this paper, the MLC capability in a phase change material Ge‐Ga‐Sb (GGS) is explored. Using the “SET” operation with increasing voltage amplitudes on this PCM cell in a 250 nm pillar structure device, three resistance levels are achieved and can be stabilized within large operating voltage windows, allowing large tolerance of SET voltage variation which may lead to the overlap of the neighboring resistance levels. It is discovered that the additional resistance level other than “0” and “1” is enabled by compositional phase separation in the nanocrystalline GGS, as revealed via atom probe tomography and electronic microscopy. The device also shows small resistance drift (ν = 0.025) in amorphous state, about four times lower than prototypical Ge‐Sb‐Te‐based PCMs, stabilizing it against time variation. Meanwhile, high thermal stability (Tc ≈ 300 °C) in GGS‐based device can also facilitate the practical applications in some extreme conditions.
The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Hao Wang,Tianqi Guo,Yuan Xue,Shilong Lv,Dongning Yao,Zhiguo Zhou,Sannian Song,Zhitang Song

DOI: https://doi.org/10.1016/j.matlet.2019.07.031

IF: 3

2019-01-01

Materials Letters

Abstract:The GSST (Ge-Sb-Se-Te) alloy has been investigated to be a competitive material choice for high density phase-change memory with robust data retention by introducing the doped Se and the excess Ge in Ge-Sb-Te ternary system. The Se dopants are found to increase the crystallization temperature and reduce the grain size. And the excess Ge atoms play a vital role in promoting the thermal stability of doped alloy. The reversible memory switching capability evidences that the GSST alloy is a potential reliable phase-change material in storage application for automobile systems. (C) 2019 Elsevier B.V. All rights reserved.
Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Yi Lv,Qian Wang,Houpeng Chen,Chenchen Xie,Shenglan Ni,Xi Li,Zhitang Song

DOI: https://doi.org/10.3390/mi12091085

IF: 3.4

2021-09-09

Micromachines

Abstract:Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ensure data reliability, many read and write operation technologies have been proposed. However, they only mitigate the influence on data through read and write operations after resistance drift occurs. In this paper, we consider the working principle of multilevel storage for PCM and present a novel 2T2R structure circuit to increase the storage density and reduce the influence of resistance drift fundamentally. To realize 3-bit per cell storage, a wide range of resistances were selected as different states of phase change memory. Then, we proposed a 4:3 compressing encoding scheme to transform the output data into binary data states. Therefore, the designed 2T2R was proven to have optimized storage density and data reliability by monitoring the conductance distribution at four time points (1 ms, 1 s, 6 h, 12 h) in 4000 devices. Simulation results showed that the resistance drift of our proposed 2T2R structure can significantly improve the storage density of multilevel storage and increase the data reliability of phase change memory.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Carbon-doped Ge2Sb2Te5 Phase Change Material: A Candidate for High-Density Phase Change Memory Application

Xilin Zhou,Liangcai Wu,Zhitang Song,Feng Rao,Min Zhu,Cheng Peng,Dongning Yao,Sannian Song,Bo Liu,Songlin Feng

DOI: https://doi.org/10.1063/1.4757137

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Carbon-doped Ge2Sb2Te5 material is proposed for high-density phase-change memories. The carbon doping effects on electrical and structural properties of Ge2Sb2Te5 are studied by in situ resistance and x-ray diffraction measurements as well as optical spectroscopy. C atoms are found to significantly enhance the thermal stability of amorphous Ge2Sb2Te5 by increasing the degree of disorder of the amorphous phase. The reversible electrical switching capability of the phase-change memory cells is improved in terms of power consumption with carbon addition. The endurance of ∼2.1 × 104 cycles suggests that C-doped Ge2Sb2Te5 film will be a potential phase-change material for high-density storage application.
Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

Kin-Fu Kao,Chain-Ming Lee,Ming-Jung Chen,Ming-Jinn Tsai,Tsung-Shune Chin

DOI: https://doi.org/10.1002/adma.200800423

IF: 29.4

2009-01-01

Advanced Materials

Abstract:An incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile, it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 degrees C, and superior thermal properties for phase-change random-access-memory applications.
Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Xilin Zhou,Liangcai Wu,Zhitang Song,Feng Rao,Yan Cheng,Cheng Peng,Dongning Yao,Sannian Song,Bo Liu,Songlin Feng,Bomy Chen

DOI: https://doi.org/10.1063/1.3614553

IF: 4

2011-01-01

Applied Physics Letters

Abstract:The phase change memory with monolayer chalcogenide film (Si18Sb52Te30) is investigated for the feasibility of multilevel data storage. During the annealing of the film, a relatively stable intermediate resistance can be obtained at an appropriate heating rate. The transmission electron microscopy in situ analysis reveals a conversion of crystallization mechanism from nucleation to crystal growth, which leads a continuous reduction in the degree of disorder. It is indicated from the electrical properties of the devices that the fall edge of the voltage pulse is the critical factor that determines a reliable triple-level resistance state of the phase change memory cell.
Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

Yanfei Cai,Peng Zhou,Tingao Tang,Charles Gao,Yinyin Lin

DOI: https://doi.org/10.1080/10584580903435323

2009-01-01

Integrated Ferroelectrics

Abstract:The multi-bit storage realization based on chalcogenide thin film transistor is put forward first here, in which the chalcogenide film acts as not only phase change material but also semiconductor layer. The channel length of thin film transistor was modified by reversible phase change between amorphous and crystalline of chalcogenide thin film adjacent to source and drain. Consequently different read-out current can be achieved to realize multi-bit storage in one single cell.
Successive crystallization in indium selenide thin films for multi-level phase-change memory

Zhehao Xu,Yukang Yuan,Sannian Song,Zhitang Song,Ruirui Liu,Jiwei Zhai

DOI: https://doi.org/10.1016/j.apsusc.2023.157642

IF: 6.7

2023-05-31

Applied Surface Science

Abstract:Increasing the storage density of phase-change memory is a challenging subject towards the universal memory commercialization. Multi-level data storage can be implemented in phase-change memory cells by designing multiple stages of crystallization of phase-change materials, which is favorable to push forward the application of phase-change memory in storage-class memory and the emerging in-memory computing. Here, the structure and properties of In 2 Se 3 phase-change thin films with multi-level phase transitions are investigated. The In 2 Se 3 thin films changes resistance states twice upon heating with high crystallization temperature and good thermal stability. The amorphous In 2 Se 3 thin films undergo partial crystallization of the Se phase followed by crystallization of the γ-In 2 Se 3 phase, with successive stages of crystallization accounting for the three distinct levels of resistivity. The phase-change memory cell based on In 2 Se 3 thin films shows a continuous switching process of high resistance state, intermediate resistance state and low resistance state with low drift coefficient in SET-RESET operations at a speed as fast as 60 ns, and the RESET power is as low as 311 pJ, indicating that the In 2 Se 3 thin films have good performance of three-state storage property and can effectively improve the memory density.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Polyamorphism in K2Sb8Se13 for Multi-Level Phase-Change Memory

Meng Xu,Chong Qiao,Kan-Hao Xue,Hao Tong,Xiaomin Cheng,Songyou Wang,Cai-Zhuang Wang,Kai-Ming Ho,Ming Xu,Xiangshui Miao

DOI: https://doi.org/10.1039/d0tc01089h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.
The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Zhitang Song,Ruobing Wang,Yuan Xue,Sannian Song

DOI: https://doi.org/10.1007/s12274-021-3570-1

IF: 9.9

2021-06-28

Nano Research

Abstract:Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for next-generation memory in the era of Big Data. The phase transition mechanism of phase change materials is the key scientific issue to be addressed for phase change memory. Moreover, obtaining homogeneous phase change materials with high speed, low power consumption, long life and good thermal stability is still the ultimate challenge for high-density three-dimensional (3D) PCRAM. In this paper, starting from the octahedral structure motifs (octahedrons) which are considered as the "gene" of phase change materials, a new view on the phase transition mechanism is proposed. Based on this mechanism, a homogeneous phase change material is developed by constructing three matched octahedrons, which achieved an overall improvement in performance, showing 180 °C ten-year data retention, 6 ns SET speed, one order of magnitude longer life time and 75% reduced power consumption compared with traditional Ge2Sb2Te5 (GST) devices. It is of great significance to use it in 3D PCRAM chip and multi-level brain-inspired computing chip in the future.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Design of Multi-States Storage Medium for Phase Change Memory

Jie Feng,Yun-Feng Lai,Bao-Wei Qiao,Bing-Chu Cai,Yin-Yin Lin,Ting-Ao Tang,Bomy Chen

DOI: https://doi.org/10.1143/jjap.46.5724

IF: 1.5

2007-01-01

Japanese Journal of Applied Physics

Abstract:A method has been introduced to realize multi-states storage in phase change memory (PCM) by using stacked phase change films with different amorphous resistivity. The amorphous resistivity of each phase change layer was selected to make the stacked films crystallize successively with the increase of current, and so obtain four resistance states. The thickness of each phase change layer was also optimized to ensure enough resistance difference between neighboring storage state. The thermal conduction simulation was performed, and the results indicate that the stacked Si–Sb–Te films with suitable composition, resistivity and thickness in each layer can crystallize successively with the increase of current and realize multi-states storage in PCM. A memory cell with stacked film structure (Si16Sb33Te51/Si4Sb46Te50/Si11Sb39Te50) was prepared. The film thicknesses of Si16Sb33Te51, Si4Sb46Te50 and Si11Sb39Te50 were optimized to be 40, 80, and 20 nm, respectively. The current–voltage (I–V) characteristics and the resistance–current (R–I) characteristics were measured. The results confirmed the four-state storage capability of the memory cell with this stacked film structure.
A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

J. H. Wang,J. Zhou,W. L. Zhou,H. Tong,D. Q. Huang,J. J. Sun,L. Zhang,X. M. Long,Y. Chen,L. W. Qu,X. S. Miao

DOI: https://doi.org/10.1016/j.sse.2012.12.011

IF: 1.916

2013-01-01

Solid-State Electronics

Abstract:A high SET/RESET speed phase change memory cell with a NMOS selector is achieved by optimizing cell structure, material, programming circuit and testing method. An asymmetric T-shape cell structure increases the current density in the programmable region and reduces thermal diffusion in the cell. Super-lattice phase change material has a lower thermal conductivity. The circuit has a fast response and reduces the falling time of RESET pulse to 0.9 ns which enables a fast phase change operation of the memory cell. The testing system has good signal integrity and transmits the undistorted ultrafast programming enable signal to I/O ports of the chip. The optimized SET time is 50 ns and RESET time is 2 ns. (C) 2013 Elsevier Ltd. All rights reserved.
Multi-level phase-change memory with ultralow power consumption and resistance drift

Bin Liu,Kaiqi Li,Wanliang Liu,Jian Zhou,Liangcai Wu,Zhitang Song,Stephen R Elliott,Zhimei Sun,Stephen R. Elliott

DOI: https://doi.org/10.1016/j.scib.2021.07.018

IF: 18.9

2021-11-01

Science Bulletin

Abstract:By controlling the amorphous-to-crystalline relative volume, chalcogenide phase-change memory materials can provide multi-level data storage (MLS), which offers great potential for high-density storage-class memory and neuro-inspired computing. However, this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase ("drift") in the amorphous phase, which limits the number of attainable storage levels. Here, we report a new type of MLS system in yttrium-doped antimony telluride, utilizing reversible multi-level phase transitions between three states, i.e., amorphous, metastable cubic and stable hexagonal crystalline phases, with ultralow power consumption (0.6 – 4.3 pJ) and ultralow resistance drift for the lower two states (power-law exponent < 0.007). The metastable cubic phase is stabilized by yttrium, while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb atoms. Finally, the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high performance. This study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations.

multidisciplinary sciences

High-Reliable Multi-Level Phase Change Memory With Bipolar Selectors

Multilevel Storage for High Reliability Phase Change Memory Application Using 2B2R Structure

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

A Novel Design for Multilevel Storage and Superb Reliability in Phase-Change Memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Multilevel optoelectronic hybrid memory based on N-doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> film with low resistance drift and ultrafast speed

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Carbon-doped Ge2Sb2Te5 Phase Change Material: A Candidate for High-Density Phase Change Memory Application

Ga<sub>2</sub>Te<sub>3</sub>Sb<sub>5</sub>-A Candidate for Fast and Ultralong Retention Phase-Change Memory

Sb-Rich Si-Sb-Te Phase Change Material for Multilevel Data Storage: the Degree of Disorder in the Crystalline State

Multi-Bit Storage Based on Chalcogenide Thin Film Transistor for High Density Nonvolatile Memory Application

Successive crystallization in indium selenide thin films for multi-level phase-change memory

Polyamorphism in K2Sb8Se13 for Multi-Level Phase-Change Memory

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Design of Multi-States Storage Medium for Phase Change Memory

A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

Multi-level phase-change memory with ultralow power consumption and resistance drift