Polyamorphism in K2Sb8Se13 for Multi-Level Phase-Change Memory

Meng Xu,Chong Qiao,Kan-Hao Xue,Hao Tong,Xiaomin Cheng,Songyou Wang,Cai-Zhuang Wang,Kai-Ming Ho,Ming Xu,Xiangshui Miao

DOI: https://doi.org/10.1039/d0tc01089h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.

What problem does this paper attempt to address?

Polyamorphism in K2Sb8Se13 for multi-level phase-change memory

Meng Xu,Chong Qiao,Kan-Hao Xue,Hao Tong,Xiaomin Cheng,Songyou Wang,Cai-Zhuang Wang,Kai-Ming Ho,Ming Xu,Xiangshui Miao

DOI: https://doi.org/10.1039/d0tc01089h

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.
Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Yang Hongxin,Luping Shi,Lee Hock Koon,Zhao Rong,Minghua Li,Jianming Li,Lim Kian Guan,Chong Tow Chong

DOI: https://doi.org/10.1149/2.0151512jss

IF: 2.2

2015-01-01

ECS Journal of Solid State Science and Technology

Abstract:Lateral phase change memory (PCM) has attracted a lot of interest due to its simpler fabrication process and lower current. Researchers are trying to increase the storage capacity of lateral PCM. This paper proposed a novel super-lattice like (SLL) structure for lateral PCM to achieve multi-level storage. Lateral PCM with SLL structure incorporated with N-doped Sb70Te30 and ZnS-SiO2 has been fabricated and tested. Both tested static I-V curve and dynamic pulse mode R-V curve show multi states existing in the device. Electrical and thermal simulations have been done for this device. Simulation results show that different resistance level can be found in this device with different states of phase change bridges. With increasing periods of SLL structure, more states can be achieved.
Origin of the unusual property contrast in K2Bi8Se13 phase-change material

Yuxuan Chen,Biao Wang,Huashan Li

DOI: https://doi.org/10.1063/5.0097718

IF: 4

2022-08-10

Applied Physics Letters

Abstract:Phase-change materials are promising foundations for both nonvolatile storage and neuro-inspired computing applications. An attractive phase change material K 2 Bi 8 Se 13 (KBS) was recently discovered to possess fast structural transition and outstanding property contrast, yet the underlying mechanism remains unclear. We conducted ab initio molecular dynamics simulations to investigate the transition of KBS from a crystalline to amorphous phase. Initiated by the Bi–Se bond breaking at the boundaries of atom blocks, the simulated phase transition proceeds through the conversion between BiSe x octahedral and pyramid structures. Remarkable discrepancies in electronic structures and absorption spectra between the two phases are further illustrated by density functional theory simulations, which reproduce the experimental observations. The optical and electrical contrasts between the two phases are found to originate from the band edge states localized at various atom blocks that uniquely appear in the crystalline phase. These states provide pseudo one-dimensional transport channels with resonant bonding that may further intensify the electrical contrast. The distinct phase change properties compared with traditional phase change materials can be attributed to the hierarchical KBS crystal structure comprised of loosely bound atom blocks. The above findings pave an avenue toward the design of phase change materials beyond the traditional scope of the Ge–Sb–Te triangle map.

physics, applied
Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Lai Yun-Feng,Feng Jie,Qiao Bao-Wei,Huang Xiao-Gang,Cai Yan-Fei,Lin Yin-Yin,Tang Ting-Ao,Cai Bing-Chu,Chen Bomy

DOI: https://doi.org/10.1088/0256-307x/23/9/046

2006-01-01

Chinese Physics Letters

Abstract:The multiple-stage storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.
Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Ruiwen Shao,Kun Zheng,Yongjin Chen,Bin Zhang,Qingsong Deng,Lili Jiao,Zhi-Ming Liao,Ze Zhang,Jin Zou,Xiaodong Han

DOI: https://doi.org/10.1039/c6tc01777k

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:Phase change memory, which is based on the reversible switching of phase change materials between amorphous and crystalline states, is one of the most promising bases of nonvolatile memory devices. However, the transition mechanism remains poorly understood. In this study, via in situ transmission electron microscopy with an externally applied DC voltage and nanosecond electrical pulses, for the first time we revealed a reversible structural evolution of Ge2Sb2Te5 thin films from an amorphous state to a single-crystal state via polycrystals as an intermediate state. This transition is different from the traditional understanding of structural changes in Ge2Sb2Te5, i.e., from an amorphous structure to a hexagonal close-packed structure via face-centered cubic as an intermediate structure. In situ observations indicate that this poly-to-single crystal structural transition is caused by coalescence of neighbouring grains induced by an electric field, in which a fast heating/cooling rate is found to be essential. Our study opens a new avenue for the realization of the multi-level operation of phase change materials.
Ab initio molecular dynamics and materials design for embedded phase-change memory

Liang Sun,Yu-Xing Zhou,Xu-Dong Wang,Yu-Han Chen,Volker L. Deringer,Riccardo Mazzarello,Wei Zhang

DOI: https://doi.org/10.1038/s41524-021-00496-7

IF: 12.256

2021-02-08

npj Computational Materials

Abstract:Abstract The Ge 2 Sb 2 Te 5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge 2 Sb 1 Te 2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge 2 Sb 1 Te 2 and elemental Ge, allowing for a direct comparison with the established Ge 2 Sb 2 Te 5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

materials science, multidisciplinary,chemistry, physical
Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

LIU Xin,ZHOU Peng,LIN Yin-yin,TANG Ting-ao,LAI Yun-feng,QIAO Bao-wei,FENG Jie,CAI Bing-cu,Bomy Chen

DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2008.01.018

2008-01-01

Abstract:Two approaches are proposed for multilevel storage based on phase change technology.The steady intermediate levels between the conventional amorphous state and crystalline state of Chalcogeinide are realized by changing the structure or material of the cell based on.In comparison with the conventional implementation of multi-level storage,the approaches proposed increase the reliability,signal-to-noise,storage density,and significantly simplify peripheral circuits.They will be promising for potential application.
Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Peng Xu,Yun Meng,Zhen Li,Xiaolin Liu,Jian Zhou,Sannian Song,Zhitang Song,Zhimei Sun,Liangcai Wu

DOI: https://doi.org/10.1021/acsanm.3c01022

IF: 6.14

2023-05-12

ACS Applied Nano Materials

Abstract:High thermal stability, fast operation speed, low thickness variation, and low resistance drift of phase-change nanomaterials are the essential characteristics in phase-change memory (PCM) applications. In this work, we put forward a graphite carbon-doped Sb2Te (C-Sb2Te) chalcogenide with semiconductor process compatibility. Our results prove that the proposed C-Sb2Te has excellent thermal stability and high operation speed. More importantly, the thickness change and resistance drift are only 0.89% and 0.0149, respectively. The C-Sb2Te-based memory device exhibits a high switching speed to the instrument test limit (5 ns) with a large resistance ratio, low operation voltage (2 V), and low power consumption (6.9 pJ). The proposed C-Sb2Te nanostructure material exceeds both conventional Ge2Sb2Te5 and transition-metal-doped Sb2Te materials in terms of its performance. Ab initio molecular dynamics simulations reveal that C–C and C–Sb bonds as well as C–C chains are formed in C-Sb2Te, and C doping constrains phase transition in a small region and refines grains of C-Sb2Te, thus resulting in the high performance. Our study suggests that C-Sb2Te is a potential candidate for high-speed, high-thermal-stability, and high-reliability PCM applications.

materials science, multidisciplinary,nanoscience & nanotechnology
Successive crystallization in indium selenide thin films for multi-level phase-change memory

Zhehao Xu,Yukang Yuan,Sannian Song,Zhitang Song,Ruirui Liu,Jiwei Zhai

DOI: https://doi.org/10.1016/j.apsusc.2023.157642

IF: 6.7

2023-05-31

Applied Surface Science

Abstract:Increasing the storage density of phase-change memory is a challenging subject towards the universal memory commercialization. Multi-level data storage can be implemented in phase-change memory cells by designing multiple stages of crystallization of phase-change materials, which is favorable to push forward the application of phase-change memory in storage-class memory and the emerging in-memory computing. Here, the structure and properties of In 2 Se 3 phase-change thin films with multi-level phase transitions are investigated. The In 2 Se 3 thin films changes resistance states twice upon heating with high crystallization temperature and good thermal stability. The amorphous In 2 Se 3 thin films undergo partial crystallization of the Se phase followed by crystallization of the γ-In 2 Se 3 phase, with successive stages of crystallization accounting for the three distinct levels of resistivity. The phase-change memory cell based on In 2 Se 3 thin films shows a continuous switching process of high resistance state, intermediate resistance state and low resistance state with low drift coefficient in SET-RESET operations at a speed as fast as 60 ns, and the RESET power is as low as 311 pJ, indicating that the In 2 Se 3 thin films have good performance of three-state storage property and can effectively improve the memory density.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials

Yonghui Zheng,Wenxiong Song,Zhitang Song,Yuanyuan Zhang,Tianjiao Xin,Cheng Liu,Yuan Xue,Sannian Song,Bo Liu,Xiaoling Lin,Vladimir G. Kuznetsov,Ilya I. Tupitsyn,Alexander V. Kolobov,Yan Cheng

DOI: https://doi.org/10.1002/advs.202301021

IF: 15.1

2023-12-24

Advanced Science

Abstract:Direct atomic identification technique demonstrates that the ultrafast speed of Sb–Te materials is due to the disordered nature of lattice occupation by different classes of atoms. After atomic ordering with disordered chemical occupation, is a chemical ordering sequence, which brings different storage states with different resistance values. The disorder‐to‐order (crystallization) process in phase‐change materials determines the speed and storage polymorphism of phase‐change memory devices. Only by clarifying the fine‐structure variation can the devices be insightfully designed, and encode and store information. As essential phase‐change parent materials, the crystallized Sb–Te binary system is generally considered to have the cationic/anionic site occupied by Sb/Te atoms. Here, direct atomic identification and simulation demonstrate that the ultrafast crystallization speed of Sb–Te materials is due to the random nature of lattice site occupation by different classes of atoms with the resulting octahedral motifs having high similarity to the amorphous state. It is further proved that after atomic ordering with disordered chemical occupation, chemical ordering takes place, which results in different storage states with different resistance values. These new insights into the complicated route from disorder to order will play an essential role in designing neuromorphic devices with varying polymorphisms.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
C-Sb Materials As Candidate for Phase-Change Memory

Chih-Chung Chang,Po-Chin Chang,Kin-Fu Kao,Tri-Rung Yew,Ming-Jinn Tsai,Tsung-Shune Chin

DOI: https://doi.org/10.1109/tmag.2010.2103396

IF: 1.848

2011-01-01

IEEE Transactions on Magnetics

Abstract:We studied crystallization behaviors of amorphous C-Sb films to evaluate their applicability in phase-change memory. C-Sb thin-films with 92 to 50 at% Sb were deposited by co-sputtering from elemental targets. In-situ electrical resistance-temperature measurement, differential thermal analysis, and grazing-incident X-ray diffraction were applied in this work. Kinetics of crystallization was explored using Kissinger's non-isothermal method and Arrhenius' isothermal method, respectively. As-deposited C-Sb films are amorphous whose electrical resistance decreases as increasing temperature with a 4 to 3 orders-of-magnitude drop at the crystallization temperature. The crystallization temperature increases from 263 to 275 degrees C as Sb content decreases from 90 to 83 at%. The melting temperature remains almost unchanged, 624 degrees C, denoting the melting of Sb. The activation energy of crystallization increases from 3.37 eV (90 at% Sb) to 3.88 eV (83% Sb). Structure of C-Sb films after full crystallization belongs to R (3m) over bar Sb phase. The temperature corresponding to 10-year data-retention of 87 at% Sb films is 168. Electrical switching characterized using a memory-device made of 87 at% Sb film works smoothly at voltages with 50 ns pulse-width, set at 1.1 V and reset at 2.8 V. Binary C-Sb materials, being compatible with CMOS processing, are predicted to be promising candidates for use as phase-change memory.
Design of Multi-States Storage Medium for Phase Change Memory

Jie Feng,Yun-Feng Lai,Bao-Wei Qiao,Bing-Chu Cai,Yin-Yin Lin,Ting-Ao Tang,Bomy Chen

DOI: https://doi.org/10.1143/jjap.46.5724

IF: 1.5

2007-01-01

Japanese Journal of Applied Physics

Abstract:A method has been introduced to realize multi-states storage in phase change memory (PCM) by using stacked phase change films with different amorphous resistivity. The amorphous resistivity of each phase change layer was selected to make the stacked films crystallize successively with the increase of current, and so obtain four resistance states. The thickness of each phase change layer was also optimized to ensure enough resistance difference between neighboring storage state. The thermal conduction simulation was performed, and the results indicate that the stacked Si–Sb–Te films with suitable composition, resistivity and thickness in each layer can crystallize successively with the increase of current and realize multi-states storage in PCM. A memory cell with stacked film structure (Si16Sb33Te51/Si4Sb46Te50/Si11Sb39Te50) was prepared. The film thicknesses of Si16Sb33Te51, Si4Sb46Te50 and Si11Sb39Te50 were optimized to be 40, 80, and 20 nm, respectively. The current–voltage (I–V) characteristics and the resistance–current (R–I) characteristics were measured. The results confirmed the four-state storage capability of the memory cell with this stacked film structure.
Melting-free integrated photonic memory with layered polymorphs

Kaleem Ullah,Qiu Li,Tiantian Li,Tingyi Gu

DOI: https://doi.org/10.1515/nanoph-2023-0725

IF: 7.5

2024-02-01

Nanophotonics

Abstract:Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits. Being able to perform uniform phase transitions over a subwavelength scale makes PCMs particularly suitable for photonic applications. For switching between nonvolatile states, the conventional chalcogenide phase change materials are brought to a melting temperature to break the covalent bonds. The cooling rate determines the final state. Reversible polymorphic layered materials provide an alternative atomic transition mechanism for low-energy electronic (small domain size) and photonic nonvolatile memories (which require a large effective tuning area). The small energy barrier of breaking van der Waals force facilitates low energy, fast-reset, and melting-free phase transitions, which reduces the chance of element segregation-associated device failure. The search for such material families starts with polymorphic In 2 Se 3 , which has two layered structures that are topologically similar and stable at room temperature. In this perspective, we first review the history of different memory schemes, compare the thermal dynamics of phase transitions in amorphous-crystalline and In 2 Se 3 , detail the device implementations for all-optical memory, and discuss the challenges and opportunities associated with polymorphic memory.

optics,physics, applied,materials science, multidisciplinary,nanoscience & nanotechnology
Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

Nian-Ke Chen,Xian-Bin Li,Xue-Peng Wang,Wei Quan Tian,Shengbai Zhang,Hong-Bo Sun

DOI: https://doi.org/10.1016/j.actamat.2017.10.013

IF: 9.4

2017-01-01

Acta Materialia

Abstract:Phase-change memory (PCM) material is the promising material system for nonvolatile-memory technology. Performance optimization of PCM device urgently requires the deeper clarification of its material “Gene”. In this study, through first-principles calculations, p-orbital-aligned atom chains are identified to play important roles in governing optoelectronic reflectivity in amorphous Ge2Sb2Te5. These atom chains make the electronic state of the amorphous Ge2Sb2Te5 hold strong electron-polarized components, thereby governing the optical property. The present study offers a new understanding of “Gene” for PCM materials which benefit the material design and the performance improvement of PCM devices.
Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Guoxiang Wang,Fen Liu,Yegang Lu,Yimin Chen,Xiang Shen

DOI: https://doi.org/10.1063/5.0054392

IF: 4

2021-07-05

Applied Physics Letters

Abstract:The crystallization mechanism of In2S3-doped Sb thin films is studied in detail to verify the potential application in phase change memory. Here, we observe directly that two different crystallization behaviors can exist in In–S–Sb thin layers by using aberration-corrected scanning transmission electron microscopy. The difference between Sb53.3(In2S3)46.7 and Sb30.9(In2S3)69.1 materials is induced by phase separation. The crystallization mechanism of the Sb53.3(In2S3)46.7 material is related to the formation of the nanocomposite structure with continuous precipitation of Sb nanocrystals. The crystallization characteristic of the Sb30.9(In2S3)69.1 material originates from the diffusion-driven In–S/In–S–Sb interface formation that acts as a "n–p" heterojunction, thereby resulting in the "depletion layer effect" and decreasing the carrier density to 7.42 × 1020 cm−3 at 280 °C. Sb30.9(In2S3)69.1 shows good bipolar-type resistance switching characteristics as the conventional Ge2Sb2Te5. This work provides clear experimental evidence to deepen the understanding of the crystallization mechanism for indium chalcogenides alloyed with Sb films, contributing to the improved control of the phase change behavior to establish high-performance multi-level nonvolatile memory and neuromorphic synaptic systems.

physics, applied
Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

Kin-Fu Kao,Chain-Ming Lee,Ming-Jung Chen,Ming-Jinn Tsai,Tsung-Shune Chin

DOI: https://doi.org/10.1002/adma.200800423

IF: 29.4

2009-01-01

Advanced Materials

Abstract:An incongruent melting phenomenon shows the feasibility of multilevel control using the phase-change material Ga2Te3Sb5 (Ga-TS). Electrical results showed that Ga-TS cells require 25% less RESET current than do GST cells. Meanwhile, it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 degrees C, and superior thermal properties for phase-change random-access-memory applications.
Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Liu Liu,Anding Li,Yukun Chen,Ruirui Liu,Jiayue Xu,Jiwei Zhai,Zhitang Song,Sannian Song

DOI: https://doi.org/10.1088/1361-6463/ad6a25

2024-08-03

Journal of Physics D Applied Physics

Abstract:This study delves into the phase-change properties of the multilayer [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1, unveiling three distinct resistance states. These states arise from two structural transitions: initial Sb precipitation and Ge2Sb2Te5-FCC crystallization, succeeded by the transformation of Ge2Sb2Te5-FCC to Ge2Sb2Te5-HEX with additional Sb precipitation. The [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1-based PCRAM device showcases reversible switching characteristics and multi-level storage capabilities within a mere 20 ns, indicating enhanced phase-change speed and storage density. Furthermore, [Ge8Sb92(25 nm)-Ge2Sb2Te5(25 nm)]1 exhibits superior thermal stability and more steadfast data retention compared to conventional Ge2Sb2Te5. These findings offer crucial insights for advancing high-performance PCRAM devices.

physics, applied
High-Reliable Multi-Level Phase Change Memory With Bipolar Selectors

Le Xu,YuFeng Xie,Yinyin Lin

DOI: https://doi.org/10.1109/ASICON.2009.5351523

2009-01-01

Abstract:This paper proposed a novel 2B2R (two bipolar transistors& two phase change resistors) cell structure and a ratio-based state definition scheme for 3-value N-doped Ge2Se2Te5 phase change memory, and realized high density and high reliable phase change storage(1).
Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Xilin Zhou,Mengjiao Xia,Feng Rao,Liangcai Wu,Xianbin Li,Zhitang Song,Songlin Feng,Hongbo Sun

DOI: https://doi.org/10.1021/am503502q

IF: 9.5

2014-01-01

ACS Applied Materials & Interfaces

Abstract:Phase-change materials are highly promising for next-generation nonvolatile data storage technology. The pronounced effects of C doping on structural and electrical phase-change behaviors of Ge2Sb2Te5 material are investigated at the atomic level by combining experiments and ab initio molecular dynamics. C dopants are found to fundamentally affect the amorphous structure of Ge2Sb2Te5 by altering the local environments of Ge-Te tetrahedral units with stable C-C chains. The incorporated C increases the amorphous stability due to the enhanced covalent nature of the material with larger tetrahedral Ge sites. The four-membered rings with alternating atoms are reduced greatly with carbon addition, leading to sluggish phase transition and confined crystal grains. The lower RESET power is presented in the PCM cells with carbon-doped material, benefiting from its high resistivity and low thermal conductivity.
Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Pei Zhang,Weihua Wu,Bowen Fu,Xiaoqin Zhu,Jiwei Zhai

DOI: https://doi.org/10.1021/acsami.4c02905

IF: 9.5

2024-06-05

ACS Applied Materials & Interfaces

Abstract:As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb(2)Te(3) material were designed and prepared by inserting the Sn(15)Sb(85) layer. The thermal and electrical properties of superlattice-like Sb(2)Te(3)/Sn(15)Sb(85) phase-change films can be adjusted by controlling the thickness ratio of Sb(2)Te(3)/Sn(15)Sb(85). In comparison to the...

materials science, multidisciplinary,nanoscience & nanotechnology

Polyamorphism in K2Sb8Se13 for Multi-Level Phase-Change Memory

Polyamorphism in K<sub>2</sub>Sb<sub>8</sub>Se<sub>13</sub> for multi-level phase-change memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Origin of the unusual property contrast in K2Bi8Se13 phase-change material

Multiple-State Storage Capability of Stacked Chalcogenide Films (si 16 Sb 33 Te 51 /si 4 Sb 45 Te 51 /si 11 Sb 39 Te 50 ) for Phase Change Memory

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Ab initio molecular dynamics and materials design for embedded phase-change memory

Multilevel Storage Implementation Based on Multiple Stable Resistance States for High Density Phase Change Memory Application

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

Successive crystallization in indium selenide thin films for multi-level phase-change memory

A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials

C-Sb Materials As Candidate for Phase-Change Memory

Design of Multi-States Storage Medium for Phase Change Memory

Melting-free integrated photonic memory with layered polymorphs

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Ga<sub>2</sub>Te<sub>3</sub>Sb<sub>5</sub>-A Candidate for Fast and Ultralong Retention Phase-Change Memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

High-Reliable Multi-Level Phase Change Memory With Bipolar Selectors

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers