Abstract:Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation energy. The threshold switching mechanism is then explained by the nonequilibrium population in high-mobility shallow traps at high electric field and by the nonuniform field distribution along the amorphous layer thickness. A single analytical model is then shown which is able to account for subthreshold conduction, threshold switching, negative differential resistance region, and ON regime. The model can be applied for fast yet physically based computation of the current in chalcogenide-based devices (e.g., phase change memory cells and arrays) as a function of applied voltage, temperature, and programmed state.

Hot-carrier trap-limited transport in switching chalcogenides

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Evidence for Trap-Limited Transport in the Subthreshold Conduction Regime of Chalcogenide Glasses

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

A Field-Induced Threshold Switching Model of Phase-Change Memory

Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Transition from Junction Limited to Bulk Limited Subthreshold Conduction in Phase Change Memory

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Charge-Carrier Dynamics of Solution-Processed Antimony- and Bismuth-Based Chalcogenide Thin Films

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Transition from trap-mediated to band-like transport in polycrystalline monolayer molybdenum disulfide memtransistors

First-principles Prediction of the Native Filament: Dielectric Interfaces for the Possible Filamentary Switching Mechanism in Chalcogenide Selector Devices

Chalcogenide Selector Devices and Their Non-Linear Conduction Process