Abstract:Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation energy. The threshold switching mechanism is then explained by the nonequilibrium population in high-mobility shallow traps at high electric field and by the nonuniform field distribution along the amorphous layer thickness. A single analytical model is then shown which is able to account for subthreshold conduction, threshold switching, negative differential resistance region, and ON regime. The model can be applied for fast yet physically based computation of the current in chalcogenide-based devices (e.g., phase change memory cells and arrays) as a function of applied voltage, temperature, and programmed state.

Evidence for Trap-Limited Transport in the Subthreshold Conduction Regime of Chalcogenide Glasses

Evidence for finite-temperature glass transition in two dimensions

Hot-carrier trap-limited transport in switching chalcogenides

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Evidence for thermal activation in the glassy dynamics of insulating granular aluminum conductance

The effect of local non-uniformities on thermal switching and high field behaviour of structures with chalcogenide glasses

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors

Nonvanishing sub-gap photocurrent as a probe of lifetime effects

Temperature-dependent Electrical Transport Mechanism in Amorphous Ge2Sb2Te5films

Trap-free Space-Charge-limited Electron Transport in Amorphous Tin(iv) Phthalocyanine Dichloride Thin Film

Fast Electronic Trapping and De-Trapping by Mid-Gap States in CH3NH3PbCl3 Single Crystal

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors

Ab initio determination of ion-traps in silver-doped chalcogenide glass

The mechanism of electrical conduction in glassy semiconductors

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Impact of interfacial trap density of states on the stability of amorphous InGaZnO-based thin-film transistors

Comparison of the charge-crystal and charge-glass state in geometrically frustrated organic conductors studied by fluctuation spectroscopy

Mode localization and suppressed heat transport in amorphous alloys

Intrinsic electron-glass effects in strongly-localized thallium-oxide films

Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors

Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in Β‐ga2o3