Abstract:The functionality of phase change memory (PCM) as a promising non-volatile memory (NVM) is realized by changing the material properties of phase change (PC) material in a near-bottom-electrode region called 'active region'. The shape of the active region is usually assumed to be hemispheric as demonstrated by [1][2], based on which some work have been done to calculate the radius for further design optimization [3][4]. However the hemispheric assumption is only valid when the phase change element (PCE) layer, has large enough dimension to satisfy the requirement of semiinfinite thermal conductive medium used to calculate the heat generation [3]. And the dimension of the PCE layer might be small in actual design, in order to reduce the total phase change volume, which will invalidate the hemisphere assumption due to the finite geometry boundary of PCE layer [5]. So far very few work has been reported to include this situation for the calculation although the necessity is evident to develop a more general model to improve the universality of preceding work in 3-D resistance calculation, where active dimension is an indispensable element [6]. For this purpose an analytical model is proposed for active dimension calculation by solving 3-D heat conduction equation in this work, which is applicable to varying cell geometries including the situation without semi-infinite assumption. © 2015 IEEE.

3-D Resistance Model for Phase-Change Memory Cell

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Modeling active dimension for phase change memory cell

Phase-Change Memory Reset Model Based on Detailed Cell Cooling Profile

Thermal Expansion of Phase-Change Random Access Memory Cells

A Compact Phase Change Memory Model With Dynamic State Variables

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

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Modeling current reduction/or PCM cell with thermal buffer layer

Modelling of Dual-Port Computing Operations of a Phase-Change Memory Cell

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

RESET modeling of PCM using thermal budget approach

Study of geometric effect on phase change random access memory

Modeling of Transient Thermal Dissipation of Nanoscale Phase-Change Memory Cells in the Pulse Domain

Thermal Modeling And Simulation Of Nonvolatile And Non-Rotating Phase Change Memory Cell

Achieving Multiple Resistance States in Phase-Change Memory Cell

Thermal Analysis and Structural Design of Phase Change Random Access Memory