Abstract:The functionality of phase change memory (PCM) as a promising non-volatile memory (NVM) is realized by changing the material properties of phase change (PC) material in a near-bottom-electrode region called 'active region'. The shape of the active region is usually assumed to be hemispheric as demonstrated by [1][2], based on which some work have been done to calculate the radius for further design optimization [3][4]. However the hemispheric assumption is only valid when the phase change element (PCE) layer, has large enough dimension to satisfy the requirement of semiinfinite thermal conductive medium used to calculate the heat generation [3]. And the dimension of the PCE layer might be small in actual design, in order to reduce the total phase change volume, which will invalidate the hemisphere assumption due to the finite geometry boundary of PCE layer [5]. So far very few work has been reported to include this situation for the calculation although the necessity is evident to develop a more general model to improve the universality of preceding work in 3-D resistance calculation, where active dimension is an indispensable element [6]. For this purpose an analytical model is proposed for active dimension calculation by solving 3-D heat conduction equation in this work, which is applicable to varying cell geometries including the situation without semi-infinite assumption. © 2015 IEEE.

Modeling current reduction/or PCM cell with thermal buffer layer

Modeling active dimension for phase change memory cell

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

A compact model for phase change memory based on carrier transport mechanism

An Improved SPICE Model of Phase-Change Memory (PCM) for Peripheral Circuits Simulation and Design

3-D Resistance Model for Phase-Change Memory Cell

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

RESET modeling of PCM using thermal budget approach

A Compact Phase Change Memory Model With Dynamic State Variables

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

A compact model of diode array for Phase Change Memory

A Compact Diode Array Model for Phase Change Memory Application

Modeling The Heating Effects In Pcm For Circuit Simulation Accelerations

Modeling of Transient Thermal Dissipation of Nanoscale Phase-Change Memory Cells in the Pulse Domain

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Compact Modeling of Phase Change Memory with Parameter Extractions

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Modelling of Dual-Port Computing Operations of a Phase-Change Memory Cell

Current Density Enhancement Nano-Contact Phase-Change Memory for Low Writing Current