Abstract:The classic three-terminal electronic transistors and the emerging two-terminal ion-based memristors are complementary to each other in various nonconventional information processing systems in a heterogeneous integration approach, such as hybrid CMOS/memristive neuromorphic crossbar arrays. Recent attempts to introduce transitive functions into memristors have given rise to gate-tunable memristive functions, hetero-plasticity and mixed-plasticity functions. However, it remains elusive under what application scenarios and in what ways transistors can benefit from the incorporation of ion-based memristive effects. Here, we introduce a new type of transistor named 'mempolar transistor' to the transistor family. Its polarity can be converted reversibly, in a nonvolatile fashion, between n-type and p-type depending on the history of the applied electrical stimulus. This is achieved by the use of the emerging semiconducting tellurium as the electrochemically active source/drain contact material, in combination with monolayer two-dimensional MoS2 channel, which results in a gated lateral Te/MoS2/Te memristor, or from a different perspective, a transistor whose channel can be converted reversibly between n-type MoS2 and p-type Te. With this unique mempolar function, our transistor holds the promise for reconfigurable logic circuits and secure circuits. In addition, we propose and demonstrate experimentally, a ternary content-addressable memory made of only two mempolar transistors, which used to require a dozen normal transistors, and by simulations, a device-inspired and hardware matched regularization method 'FlipWeight' for training artificial neural networks, which can achieve comparable performance to that achieved by the prevalent 'Dropout' and 'DropConnect' methods. This work represents a major advance in diversifying the functionality of transistors.

Two-dimensional transistors with reconfigurable polarities for secure circuits

Nonvolatile Reconfigurable 2D Schottky Barrier Transistors

High-performance Two-Dimensional Transistors and Circuits

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Switchable and Reversible p+/n+ Doping in 2D Semiconductors by Ionic 2D Minerals

Transistors and logic circuits based on metal nanoparticles and ionic gradients

Logic gates based on neuristors made from two-dimensional materials

Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating

A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices

High-Quality Reconfigurable Black Phosphorus P-N Junctions

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

A mempolar transistor made from tellurium

Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide

Two-dimensional Non-Volatile Programmable P–n Junctions

Reconfigurable MoTe2 Field-Effect Transistors and Its Application in Compact CMOS Circuits

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits