Abstract:The exponentially improving performance of digital computers has recently slowed due to the speed and power consumption issues resulting from the von Neumann bottleneck. In contrast, neuromorphic computing aims to circumvent these limitations by spatially co-locating logic and memory. Beyond reducing power consumption, neuromorphic devices provide efficient architectures for image recognition, machine learning, and artificial intelligence [1]. This talk will explore how two-dimensional (2D) nanoelectronic materials enable gate-tunable neuromorphic devices [2]. For example, by utilizing self-aligned, atomically thin heterojunctions, dual-gated Gaussian transistors have been realized, which show tunable anti-ambipolarity for artificial neurons, competitive learning, spiking circuits, and mixed-kernel support vector machines [3]. In addition, field-driven defect motion in polycrystalline monolayer MoS 2 enables gate-tunable memristive phenomena that serve as the basis of hybrid memristor/transistor devices (i.e., 'memtransistors' [4]) that concurrently provide logic and data storage functions [5]. The planar geometry of memtransistors further allows multiple contacts and dual gating that mimic the behavior of biological systems such as heterosynaptic responses [6]. Moreover, control over polycrystalline grain structure enhances the tunability of potentiation and depression, which enables unsupervised continuous learning in spiking neural networks [7]. Overall, this work introduces foundational circuit elements for neuromorphic computing by utilizing the unique quantum characteristics of 2D nanoelectronic materials [8]. [1] V. K. Sangwan, et al. , Nature Nanotechnology, 15 , 517 (2020). [2] M. E. Beck, et al. , ACS Nano , 14 , 6498 (2020). [3] M. E. Beck, et al. , Nature Communications , 11 , 1565 (2020). [4] V. K. Sangwan, et al. , Nature , 554 , 500 (2018). [5] X. Yan, et al. , Advanced Materials , 34 , 2108025 (2022). [6] H.-S. Lee, et al. , Advanced Functional Materials , 30 , 2003683 (2020). [7] J. Yuan, et al. , Nano Letters , 21 , 6432 (2021). [8] X. Liu, et al. , Nature Reviews Materials , 4 , 669 (2019).

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

An Ambipolar Homojunction with Options

Parallel Logic Operations in Electrically Tunable Two-Dimensional Homojunctions

Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures

Reconfigurable Neuromorphic Computing with 2D Material Heterostructures for Versatile Neural Information Processing

Tactile tribotronic reconfigurable p-n junctions for artificial synapses

(Invited) Two-Dimensional Neuromorphic Computing Materials and Devices

Reconfigurable heterojunction transistors for off-grid medical devices

Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Fuzzy logic with two-dimensional interfacial junction transistors

Optoelectronic Reconfigurable Logic Gates Based on Two-Dimensional Vertical Field-Effect Transistors

Ultrafast‐programmable two‐dimensional homojunctions based on van der Waals heterostructures on a silicon substrate

Programmable Optoelectronic Synaptic Transistors Based on MoS2/Ta2NiS5 Heterojunction for Energy‐Efficient Neuromorphic Optical Operation

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Polarity Tunable Complementary Logic Circuits

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits