An Ambipolar Homojunction with Options

Yanqing Wu

DOI: https://doi.org/10.1038/s41928-020-0447-3

IF: 33.255

2020-01-01

Nature Electronics

Abstract:Circuits capable of reconfigurable logic and neuromorphic functions can be created by exploiting the electronic tunability of two-dimensional tungsten diselenide homojunctions.

What problem does this paper attempt to address?

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

Chen Pan,Chen-Yu Wang,Shi-Jun Liang,Yu Wang,Tianjun Cao,Pengfei Wang,Cong Wang,Shuang Wang,Bin Cheng,Anyuan Gao,Erfu Liu,Kenji Watanabe,Takashi Taniguchi,Feng Miao

DOI: https://doi.org/10.1038/s41928-020-0433-9

IF: 33.255

2020-06-29

Nature Electronics

Abstract:Nature Electronics, Published online: 29 June 2020; <a href="https://www.nature.com/articles/s41928-020-0433-9">doi:10.1038/s41928-020-0433-9</a>A homojunction device made from two-dimensional tungsten diselenide can be used to create circuits that exhibit multifunctional logic and neuromorphic capabilities with simpler designs than conventional silicon-based systems.

engineering, electrical & electronic
Parallel Logic Operations in Electrically Tunable Two-Dimensional Homojunctions

Yuliang Chen,Zhong Wang,Chongwen Zou,Stuart S P Parkin

DOI: https://doi.org/10.1021/acs.nanolett.4c04337

IF: 10.8

2024-10-31

Nano Letters

Abstract:Two-dimensional materials show great potential for future electronics beyond silicon materials. Here, we report an exotic multiple-port device based on multiple electrically tunable planar p-n homojunctions formed in a two-dimensional (2D) ambipolar semiconductor, tungsten diselenide (WSe(2)). In this device, we prepare multiple gates consisting of a global gate and several local gates, by which electrostatically induced holes and electrons are simultaneously accumulated in a WSe(2) channel, and...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He,Yiming Pan,Haiyan Nan,Shuai Gu,Ziyi Yang,Bing Wu,Xiaoguang Luo,Bingchen Xu,Yuhan Zhang,Yun Li,Zhenhua Ni,Baigeng Wang,Jia Zhu,Yang Chai,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1511.02361

2015-11-07

Abstract:van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

Mesoscale and Nanoscale Physics,Materials Science
Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Wennan Hu,Yunlin Liu,Zhangcheng Huang,Jianguo Dong,Yue Wang,Weiao Chen,Zhe Sheng,Haoran Sun,Guangxi Hu,Chunxiao Cong,David Wei Zhang,Ye Lu,Peng Zhou,Zengxing Zhang

DOI: https://doi.org/10.1088/1361-6463/acd38e

2023-05-11

Abstract:As the scaling of integrated circuits based on silicon semiconductor becomes increasingly challenging due to the minimum feature size is close to the physical limit, the urgent demand for alternative strategies has fueled the rapid growth of technique and material innovations. Here, we report on the fabrication of vertically-stacked ambipolar complementary field-effect transistor (CFET) that is fully composed of two-dimensional materials of WSe2/h-BN/graphene/h-BN/WSe2 heterostructure. The ambipolar feature of the top and bottom WSe2 FET enables a switchable inverter behavior with a favorable voltage gain up to 75, which can work in both the first and third quadrant. Based on the switchable characteristic, a large voltage swing circuit for single photon avalanche detector (SPAD) is proposed without any bulky negative-voltage components. This work could open a new pathway for future 2D electronics and ultimate monolithic 3D high-density integration circuit.

physics, applied
Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

You Meng,Weijun Wang,Wei Wang,Bowen Li,Yuxuan Zhang,Johnny Ho

DOI: https://doi.org/10.1002/adma.202306290

IF: 29.4

2023-08-16

Advanced Materials

Abstract:Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next‐generation integrated circuit chips and telecommunication technologies. Thanks to strategic material design and device integration, anti‐ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti‐ambipolar heterojunctions. First, we discuss the fundamental operating mechanisms of anti‐ambipolar devices. After that, potential materials used in anti‐ambipolar devices are discussed with particular attention to 2D‐based, 1D‐based, and organic‐based heterojunctions. Next, we overview the primary device applications employing anti‐ambipolar heterojunctions, including anti‐ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti‐ambipolar heterojunctions and their applications are also emphasized. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Van Der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

Lei Yin,Feng Wang,Ruiqing Cheng,Zhenxing Wang,Junwei Chu,Yao Wen,Jun He

DOI: https://doi.org/10.1002/adfm.201804897

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:Controlling the conduction behavior of 2D materials is an important prerequisite to achieve their electronic and optoelectronic applications. However, most of the reported approaches are aware of the shortcomings of inflexibility and complexity, which limits the possibility of multifunctional integration. Here, taking advantage of van der Waals heterostructure engineering, a simple method to achieve a dynamically controlled binary channel in a semivertical MoTe2/MoS2 field effect transistor is proposed. It is enabled by the high switchability between tunneling and thermal transports through simply changing the sign of voltage bias. In addition, the proposed system allows for multifunctional integration of transistor with on/off ratio >10(7) and diode with rectification ratio >10(6). Moreover, the devices show screen capability to negative photoresponse effect that is widely observed in ambipolar materials, hence improving the photodetection reliability and sensitivity. This study broadens the functionalities of van der Waals heterostructures and opens up more possibilities to realize multifunctional devices.
Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

Tengyu Jin,Jing Gao,Yanan Wang,Yue Zheng,Shuo Sun,Lei Liu,Ming Lin,Wei Chen

DOI: https://doi.org/10.1007/s12274-022-4070-7

IF: 9.9

2022-01-29

Nano Research

Abstract:Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity. Here, we report a reconfigurable WSe2 optoelectronic device that can function as photodiode, artificial synapse, and 2-bit memory in a single device, enabled by an asymmetric floating gate (AFG) that can continuously program the device into different homojunction modes. The lateral p–n homojunction formed in the AFG device exhibits high-performance self-powered photodetection, with a responsivity over 0.17 A·W−1 and a wide detection spectral range from violet to near-infrared region. The AFG device can also mimic synaptic features of biological synapses and achieve distinct potentiation/depression behaviors under the modulation of both drain-source bias and light illumination. Moreover, when working as a 2-bit memory via the transition between n–n+ and p–n homojunctions, the AFG device shows four distinct conductive states with a high on/off current ratio over 106 and good repeatability. Combining reduced processing complexity and reconfigurable functionalities, the WSe2 AFG devices demonstrate great potential towards high-performance photoelectric interconnected circuits.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Chengdong Yao,Guangcheng Wu,Mingqiang Huang,Wenqiang Wang,Cheng Zhang,Jiaxin Wu,Huawei Liu,Biyuan Zheng,Jiali Yi,Chenguang Zhu,Zilan Tang,Yizhe Wang,Ming Huang,Luying Huang,Ziwei Li,Li Xiang,Dong Li,Shengman Li,Anlian Pan

DOI: https://doi.org/10.1021/acsami.3c00063

IF: 9.5

2023-05-04

ACS Applied Materials & Interfaces

Abstract:Artificial synapse networks capable of massively parallel computing and mimicking biological neural networks can potentially improve the processing efficiency of existing information technologies. Semiconductor devices functioning as excitatory and inhibitory synapses are crucial for developing intelligence systems, such as traffic control systems. However, achieving reconfigurability between two working modes (inhibitory and excitatory) and bilingual synaptic behavior in a single transistor remains challenging. This study successfully mimics a bilingual synaptic response using an artificial synapse based on an ambipolar floating gate memory comprising tungsten selenide (WSe2)/hexagonal boron nitride (h-BN)/ molybdenum telluride (MoTe2). In this WSe2/h-BN/MoTe2 structure, ambipolar semiconductors WSe2 and MoTe2 are inserted as channel and floating gates, respectively, and h-BN serves as the tunneling barrier layer. Using either positive or negative pulse amplitude modulations at the control gate, this device with bipolar channel conduction produced eight distinct resistance states. Based on this, we experimentally projected that we could achieve 490 memory states (210 hole-resistance states + 280 electron-resistance states). Using the bipolar charge transport and multistorage states of WSe2/h-BN/MoTe2 floating gate memory, we mimicked reconfigurable excitatory and inhibitory synaptic plasticity in a single device. Furthermore, the convolution neural network formed by these synaptic devices can recognize handwritten digits with an accuracy of >92%. This study identifies the unique properties of heterostructure devices based on two-dimensional materials as well as predicts their applicability in advanced recognition of neuromorphic computing.

materials science, multidisciplinary,nanoscience & nanotechnology
Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In- Plane Ionic Migration

Huanfeng Zhu,Jialin Li,Qiang Chen,Wei Tang,Xinyi Fan,Fan Li,Linjun Li

DOI: https://doi.org/10.1021/acsnano.2c09280

IF: 17.1

2023-01-01

ACS Nano

Abstract:As basic building blocks for next-generation information technologies devices, high-quality p -n junctions based on van der Waals (vdW) materials have attracted widespread interest. Compared to traditional two-dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu+ ions under an in-plane electric field, a lateral p -n homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanied by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS p -n homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to the visible region due to the better photogenerated carrier separation efficiency. Therefore, this work provides a facile route to fabricate homojunctions through electric-field-driven ionic migration.
Light‐Triggered and Polarity‐Switchable Homojunctions for Optoelectronic Logic Devices

Kangjie Li,Ting He,Nan Guo,Tengfei Xu,Xiao Fu,Fang Wang,Hangyu Xu,Guohua Li,Shuning Liu,Ke Deng,Yunlong Xiao,Jinshui Miao,Weida Hu

DOI: https://doi.org/10.1002/adom.202202379

IF: 9

2023-01-19

Advanced Optical Materials

Abstract:A concept of light‐triggered and polarity‐switchable homojunction is proposed to achieve optoelectronic logic devices without any assistance of voltage. The junction formation and signal acquisition are simultaneously stimulated by light in photovoltaic mode. In addition, the devices exhibit both anomalous photoresponse and optical memory behaviors in photoconductive mode. Semiconductor homojunctions based on 2D materials are promising candidates for optoelectronic logic devices due to their excellent electrostatic tunability and photoelectric characteristic. However, to reach programmable logic functions, the 2D homojunctions usually suffer from compulsory combinations of electrical and optical inputs. Here, a light‐triggered and polarity‐switchable homojunction made from the vertically stacked MoTe2/CuInP2S6/Au layers in a dual‐floating gate transistor configuration, is demonstrated. Utilizing the band alignment between MoTe2 and CuInP2S6, the photocarriers in MoTe2 can be excited to Au layer across the insulating CuInP2S6 efficiently, serving as floating gate to modulate the polarity of the MoTe2 homojunctions which produce photocurrents simultaneously in photovoltaic mode. A logic gate XOR is achieved in one single device without the need for any applied voltage. Moreover, the devices exhibit both anomalous photoresponse and optical memory behaviors in photoconductive mode. The results provide a potential route for the development of optoelectronic logic devices with fully light‐actuated sensing capability.

materials science, multidisciplinary,optics
A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

Meng-Yu Tsai,Chia-Tse Huang,Che-Yi Lin,Mu-Pai Lee,Feng-Shou Yang,Mengjiao Li,Yuan-Ming Chang,Kenji Watanabe,Takashi Taniguchi,Ching-Hwa Ho,Wen-Wei Wu,Mahito Yamamoto,Jiunn-Lin Wu,Po-Wen Chiu,Yen-Fu Lin

DOI: https://doi.org/10.1038/s41928-023-01034-7

IF: 17.694

2023-09-30

NanoScience and Technology

Abstract:Reconfigurable field-effect transistors (FETs) combine unipolar n- and p-type characteristics in a single programmable device and could be used to reduce the complexity of electronic devices. However, current reconfigurable FETs require a constant voltage supply to achieve polarity conversion, leading to high power consumption. Here we report a reconfigurable FET that is based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride (hBN/ReSe 2 /hBN) heterostructure and has a nonvolatile and tunable polarity. A photoinduced trapping mechanism is used to drive photoexcited holes or electrons into the interface between the hBN and the silicon dioxide substrate. The reconfigurable FET can switch between a transistor and memory mode, and several FETs can be used to create inverter, AND, OR, NAND, NOR, XOR and XNOR circuits. We also show that, when in memory-mode operation, the devices can be used to emulate synaptic functions for neuromorphic computing systems.
Ambipolar Barristors for Reconfigurable Logic Circuits

Yuan Liu,Guo Zhang,Hailong Zhou,Zheng Li,Rui Cheng,Yang Xu,Vincent Gambin,Yu Huang,Xiangfeng Duan

DOI: https://doi.org/10.1021/acs.nanolett.6b04417

IF: 10.8

2017-01-01

Nano Letters

Abstract:Vertical heterostructures based on graphene have emerged as a unique architecture for novel electronic devices with unusual characteristics. Here we report a new design of vertical ambipolar barristors based on metal graphene silicon graphene sandwich structure, using the bottom graphene as a gate-tunable "active contact", the top graphene as an adaptable Ohmic contact, and the low doping thin silicon layer as the switchable channel. Importantly, with finite density of states and weak screening effect of graphene, we demonstrate, for the first time, that both the carrier concentration and majority carrier type in the sandwiched silicon can be readily modulated by gate potential penetrating through graphene. It can thus enable a new type of ambipolar barristors with an ON-OFF ratio exceeding 10(3). Significantly, these ambipolar barristors can be flexibly configured into either p-type or n-type transistors and used to create integrated circuits with reconfigurable logic functions. This unconventional device structure and ambipolar reconfigurable characteristics can open up exciting opportunities in future electronics based on graphene or two-dimensional van der Waals heterostructures.
Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Xingxia Sun,Chenguang Zhu,Jiali Yi,Li Xiang,Chao Ma,Huawei Liu,Biyuan Zheng,Yong Liu,Wenxia You,Wujun Zhang,Delang Liang,Qin Shuai,Xiaoli Zhu,Huigao Duan,Lei Liao,Yuan Liu,Dong Li,Anlian Pan

DOI: https://doi.org/10.1038/s41928-022-00858-z

IF: 33.255

2022-11-18

Nature Electronics

Abstract:Nature Electronics, Published online: 17 November 2022; doi:10.1038/s41928-022-00858-z A van der Waals heterostructure that has a partial floating-gate field-effect transistor device architecture can function as both reconfigurable transistor and reconfigurable non-volatile memory, and can provide reconfigurable logic-in-memory capabilities.

engineering, electrical & electronic
Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Sadegh Kamaei,Xia Liu,Ali Saeidi,Yingfen Wei,Carlotta Gastaldi,Juergen Brugger,Adrian M. Ionescu

DOI: https://doi.org/10.1038/s41928-023-01018-7

IF: 17.694

2023-09-02

NanoScience and Technology

Abstract:The co-integration of logic switches and neuromorphic functions could be used to create new computing architectures with low power consumption and novel functionalities. Two-dimensional (2D) semiconductors and ferroelectric materials could be potentially used to make such devices, but integrating them on the same platform is challenging. Here we show that the 2D semiconductor tungsten diselenide and 2D/2D heterostructures of tungsten diselenide/tin diselenide can be integrated with doped high- k ferroelectric (silicon-doped hafnium oxide) and high- k dielectric gate stacks. With this single platform, four types of logic switch—2D metal–oxide–semiconductor field-effect transistors (FETs), 2D/2D tunnel FETs, negative-capacitance 2D FETs and negative-capacitance 2D/2D tunnel FETs—can be created. The negative-capacitance tungsten diselenide/tin diselenide tunnel FET exhibits an average subthreshold swing of 55 mV dec –1 over four decades of current, and the negative-capacitance tungsten diselenide FET exhibits an average subthreshold swing of 50 mV dec –1 over three decades. The shared ferroelectric gate stacks on 2D devices can also be exploited to create co-integrated artificial synapses for neuromorphic computing.
Ultrafast‐programmable two‐dimensional homojunctions based on van der Waals heterostructures on a silicon substrate

Hao Wang,Lihong Bao,Roger Guzman,Kang Wu,Aiwei Wang,Li Liu,Liangmei Wu,Jiancui Chen,Qing Huan,Wu Zhou,Sokrates T. Pantelides,Hong‐Jun Gao

DOI: https://doi.org/10.1002/adma.202301067

IF: 29.4

2023-05-21

Advanced Materials

Abstract:The development of electrically ultrafast‐programmable semiconductor homojunctions can lead to transformative multifunctional electronic devices. However, silicon‐based homojunctions are not programmable so that alternative materials need to be explored. Here we demonstrate two‐dimensional (2D), multi‐functional, lateral homojunctions made of van der Waals heterostructures with a semi‐floating‐gate configuration on a p++ Si substrate feature atomically sharp interfaces and can be electrostatically programmed in nanoseconds, more than seven orders of magnitude faster than other 2D‐based homojunctions. By applying voltage pulses with different polarities, lateral p‐n, n+‐n and other types of homojunctions can be formed, varied, and reversed. The p‐n homojunctions possess a high rectification ratio up to ∼105 and can be dynamically switched between four distinct conduction states with the current spanning over nine orders of magnitude, enabling them to function as logic rectifiers, memories and multi‐valued logic inverters. Built on a p++ Si substrate, which acts as the control gate, the devices are compatible with Si technology. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Congli He,Jian Tang,Da-Shan Shang,Jianshi Tang,Yue Xi,Shuopei Wang,Na Li,Qingtian Zhang,Ji-Kai Lu,Zheng Wei,Qinqin Wang,Cheng Shen,Jiawei Li,Shipeng Shen,Jianxin Shen,Rong Yang,Dongxia Shi,Huaqiang Wu,Shouguo Wang,Guangyu Zhang

DOI: https://doi.org/10.1021/acsami.9b21747

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) materials and van der Waals heterostructures have attracted tremendous attention because of their appealing electronic, mechanical, and optoelectronic properties, which offer the possibility to extend the range of functionalities for diverse potential applications. Here, we fabricate a novel multiterminal device with dual-gate based on 2D material van der Waals heterostructures. Such a multiterminal device exhibited excellent nonvolatile multilevel resistance switching performance controlled by the source-drain voltage and backgate voltage. Based on these features, heterosynaptic plasticity, in which the synaptic weight can be tuned by another modulatory interneuron, has been mimicked. A tunable analogue weight update (both on/off ratio and update nonlinearity) of synapse with high speed (50 ns) and low energy (similar to 7.3 fJ) programming has been achieved. These results demonstrate the great potential of the artificial synapse based on van der Waals heterostructures for neuromorphic computing.
Nonvolatile Reconfigurable 2D Schottky Barrier Transistors

Zijing Zhao,Shaloo Rakheja,Wenjuan Zhu

DOI: https://doi.org/10.1021/acs.nanolett.1c03557

IF: 10.8

2021-10-22

Nano Letters

Abstract:Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact logic circuits with low power consumption in maintaining the configuration. In this paper, we build nonvolatile reconfigurable transistors based on 2D CuInP2S6/MoTe2 heterostructures. The ferroelectric polarization-induced electron and hole doping in the heterostructure are investigated. By introducing the ferroelectric doping into the source/drain contacts, we demonstrate reconfigurable Schottky barrier transistors, whose polarity (n-type or p-type) can be dynamically programmed, where the configuration is nonvolatile in nature. These transistors exhibit a tunable photoresponse, where the n-n doping state leads to negative photocurrent, whereas the p-p doping state gives rise to a positive photocurrent. The transistor with asymmetric (n-p or p-n) contacts exhibits a strong photovoltaic effect. These reconfigurable logic and optoelectronic transistors will enable a new type of device fabric for future computing systems and sensing networks.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

Jinseong Heo,Heejeong Jeong,Yeonchoo Cho,Jaeho Lee,Kiyoung Lee,Seunggeol Nam,Eun-Kyu Lee,Sangyeob Lee,Hyangsook Lee,Sungwoo Hwang,Seongjun Park

DOI: https://doi.org/10.1021/acs.nanolett.6b02199

IF: 10.8

2016-10-05

Nano Letters

Abstract:Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal-insulator-semiconductor field effect transistors built from these 2D elements were studied for flexible and transparent electronics. However, to induce ambipolar characteristics for alternative power-efficient circuitry, ion-gel gating is often employed for high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe2 optoelectronic transistors with all 2D components, where the device can be reconfigured by both drain and gate voltages. Eight different configurations for each fixed voltage are spatially resolved by scanning photocurrent microscopy. In addition, metal-insulator transitions are observed in both electron and hole carriers under 2 V due to strong Coulomb interaction in the system. Furthermore, the vertical tunneling photocurrent through multiple van der Waals layers between the gate and source contacts is measured. Our reconfigurable devices offer potential building blocks for system-on-a-chip optoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Thermally tunable anti-ambipolar heterojunction devices

Qian Liu,Shengyao Chen,Jiyou Jin,Wenxiang Wang,Shu Wang,Xiaoshan Du,Feng Wang,Lijun Ma,Junqi Wang,Cong Wang,Xinzheng Zhang

DOI: https://doi.org/10.1039/d4cp02937b

IF: 3.3

2024-08-19

Physical Chemistry Chemical Physics

Abstract:Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As0.4P0.6 and PdSe2, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (Vpeak) of -3 V and a peak-to-valley ratio (PVR) close to 8 × 103, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (~103) and a large Vpeak (~ -16 V) are obtained, while a PVR exceeding 108 has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.

chemistry, physical,physics, atomic, molecular & chemical
Ambipolar Two-dimensional Materials and Synaptic Devices for Neuromorphic Computing

Yanming Liu,He Tian,Tian‐Ling Ren

DOI: https://doi.org/10.1039/9781788019279-00333

2020-01-01

Abstract:As Moore's law approaches its limits, it is gradually harder to achieve the more and more complex tasks with computers with conventional von Neumann architecture. The hardware circuits for neuromorphic computing, with low power and high computing density, have attracted a lot of attention. Based on these requirements, how to choose the appropriate circuit components for neuromorphic computing becomes very important. Ambipolar synaptic devices with tunable and versatile behaviours, as a new type of circuit component, can mimic both excitatory and inhibitory behaviours, which has great potential in neuromorphic computing. In this chapter, we will introduce the definitions of ambipolar materials and synaptic devices. Then, the characteristics and applications of the synaptic devices will be discussed. The differences between conventional and ambipolar synaptic devices will also be compared. Finally, we will introduce the possibility of applying ambipolar synaptic devices in array to achieve more complex work.

An Ambipolar Homojunction with Options

Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions

Parallel Logic Operations in Electrically Tunable Two-Dimensional Homojunctions

A van der Waals pn heterojunction with organic/inorganic semiconductors

Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits

Anti‐Ambipolar Heterojunctions: Materials, Devices, and Circuits

Van Der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory

Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In- Plane Ionic Migration

Light‐Triggered and Polarity‐Switchable Homojunctions for Optoelectronic Logic Devices

A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping

Ambipolar Barristors for Reconfigurable Logic Circuits

Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices

Ultrafast‐programmable two‐dimensional homojunctions based on van der Waals heterostructures on a silicon substrate

Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing

Nonvolatile Reconfigurable 2D Schottky Barrier Transistors

Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

Thermally tunable anti-ambipolar heterojunction devices

Ambipolar Two-dimensional Materials and Synaptic Devices for Neuromorphic Computing