Room Temperature Broadband Infrared Carbon Nanotube Photodetector with High Detectivity and Stability
Yang Liu,Nan Wei,Qingsheng Zeng,Jie Han,Huixin Huang,Donglai Zhong,Fanglin Wang,Li Ding,Jiye Xia,Haitao Xu,Ze Ma,Song Qiu,Qingwen Li,Xuelei Liang,Zhiyong Zhang,Sheng Wang,Lian-Mao Peng
DOI: https://doi.org/10.1002/adom.201500529
IF: 9
2015-01-01
Advanced Optical Materials
Abstract:In this letter, we show that high-performance photodiodes can be constructed using solution-processed CNTs via a dopingfree technique. In contrast to other photodetectors that use photocurrent as the signal, [ 8,11–20 ] here we exploit using photovoltage as the signal. The major benefi t of using photovoltage is that the commonly occurring shot noise and 1/ f noise can be signifi cantly suppressed. In addition, signal can be multiplied via introducing virtual contacts, which leads to further improvement on signal-to-noise ratio. A prototype CNT IR detector is demonstrated, which works at room temperature and shows broadband response, high responsivity and detectivity that are comparable to that of state-of-the-art room temperature semiconductor IR detectors. It is also demonstrated that our CNT IR detectors have excellent stability, as a result of the dopingfabrication process used here, with time, under high power illumination and at rigorous temperature conditions. An array of 150 × 150 photodetectors on a single chip is fabricated, with tested yield of 100% and high device uniformity, showing the potential for large-scale fabrication capability and imager applications. In a typical photovoltaic device, a built-in fi eld is essential for the effi cient separation of photoinduced electron–hole pairs. For CNT-based diodes, ideal rectifi cation behavior has been realized by using split gates or asymmetric contacts on individual CNTs. [ 9,10,13 ] However, light absorption in these devices is usually very weak. It is thus advantageous to construct a photodiode using CNT fi lm with more CNTs in the device channel. However, solution-processed CNT-fi lm-based diodes showing excellent rectifi cation effect have not been realized. [ 23,24 ] Here, we show that such high-performance diode based on solutionprocessed CNT fi lm can be realized by using a doping-free technique in a barrier-free-bipolar diode (BFBD) device geometry as depicted in Figure 1 a. In this device geometry, Sc and Pd are asymmetrically contacted to a CNT fi lm made by a liquidphase deposition technique on an n + silicon/SiO 2 substrate (see Figure S1a,b, Supporting Information). Thus, p-region and n-region are automatically formed adjacent to the contacts by charge transfer from the contacts. This process involves no intentionally introduced dopants, no extra defects on CNTs, Room Temperature Broadband Infrared Carbon Nanotube Photodetector with High Detectivity and Stability