Abstract:This study finds that carbon nanotube thin film transistors (CNT TFTs) display classical drift‐diffusion transport in the on‐state but exhibit an abnormal long‐channel effect (LCE) in the subthreshold region due to CNT junctions. An analytical model is developed to describe this, revealing that increased channel length worsens the subthreshold swing (SS), impacting performance in biosensors and large‐scale applications. Carbon nanotube (CNT) thin film transistors (TFTs) have demonstrated great potential for application in highly sensitive biosensors and large‐area electronics. However, research on the electrical behavior of long‐channel CNT TFTs is lacking; thus, the purposeful improvement in the performance of biosensors or circuits is difficult. In this study, the electrical transport characteristics of ionic‐liquid‐gate CNT TFTs with channel lengths (Lch) ranging from 10 to 400 μm are investigated. The CNT TFTs present classical drift‐diffusion transport at on‐state with a carrier mobility of around 27 cm2 V−1 s−1. In the subthreshold region of the CNT TFTs, an abnormal Lch‐dependent subthreshold swing (SS) relationship, named as the long‐channel effect (LCE)is observed, where SS worsens with increasing Lch. The existence of the junctions between the CNTs results in an unconventional density of states for carriers and a large series resistance for sharing the gate voltage; this dominates the abnormal scaling behavior in the subthreshold region by degrading the electrostatic integrity. The discovery of the abnormal LCE can aid in the construction of device models and purposefully improve the performance of CNT TFTs for biosensors and other large‐scale electronic applications.

Channel-length-dependent Transport and Photovoltaic Characteristics of Carbon-Nanotube-based, Barrier-Free Bipolar Diode.

Length Scaling of Carbon Nanotube Electric and Photo Diodes Down to Sub-50 Nm

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Photovoltaic Effects in Asymmetrically Contacted CNT Barrier-Free Bipolar Diode

High Conversion Efficiency Carbon Nanotube-Based Barrier-Free Bipolar-Diode Photodetector.

Photoelectrical Characteristics of a C/CNx Multiwalled Nanotube

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

Electrostatics and Quantum Efficiency Simulations of Asymmetrically Contacted Carbon Nanotube Photodetector

Contact-dominated Transport in Carbon Nanotube Thin Films: Toward Large-Scale Fabrication of High Performance Photovoltaic Devices.

Carbon Nanotube-Based Photovoltaic And Light-Emitting Diodes

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

A nanoscale pn junction in series with tunable Schottky barriers

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

A Comprehensive Atomic Study Of Carbon Nanotube Schottky Diode Using First Principles Approach

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Carbon nanotube photoelectronic and photovoltaic devices and their applications in infrared detection.

Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors

Tuning Threshold Voltage of Carbon Nanotube Thin Film Transistors by Channel Length Engineering

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

Effect of the Carbon-Nanotube Length on Water Permeability

High-Performance Carbon Nanotube Light-Emitting Diodes with Asymmetric Contacts