Abstract:Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 μm or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p -type transfer characteristics, with a large current ON/OFF ratio of more than 10 4 when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO 2 , which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm 2 , the device resulted in an open circuit voltage V OC = 0.21 V and a short circuit current I SC = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime.

Fabrication of Carbon Nanotube Diode with Atomic Force Microscopy Manipulation

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Fabrication of Electromechanical Switch Using Interconnected Single-Walled Carbon Nanotubes

Development of Microsturcture Based on Single-Wall Carbon Nanotube.

Fabrication of Self-Aligned Side Gates to Carbon Nanotubes

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

Controlled Fabrication of Intermolecular Junctions of Single-Walled Carbon Nanotube/Graphene Nanoribbon