Abstract:Density functional theory was utilized to study the electronic properties of boron nitride (BN) sheets, taking into account the presence of defects. The structure considered consisted of a central hexagon surrounded by alternating pentagons (three) and heptagons (three). The isocoronene cluster model with an armchair edge was used with three different chemical compositions. In the first structure, three B–B bonds were formed where one B in the dimer was part of the central hexagon. In the second structure, three N–N–N bonds were formed at the periphery of the cluster, around the central hexagon. In the third structure, three N–N bonds were formed in a similar fashion to the first model. Our results indicated that the third structure was the most stable configuration; this exhibited planar geometry, semiconductor behavior, and ionic character. To explore the effects of doping, we replaced B and N atoms with C atoms, considering different atomic positions in the central hexagon. When an N atom was replaced with a C atom, the new structure was a semiconductor, but when a B atom was replaced with a C atom, the new structure was a semimetal. At the same time, the polarity increased, inducing covalent behavior. Replacing two N atoms with two C atoms also resulted in a semiconductor, while replacing two B atoms with two C atoms yielded a semimetal; in both cases the bonding was covalent. When three B (three N) atoms of the central hexagon were replaced with three C atoms, the new structure exhibited a transition to a conductor (remained a semiconductor) with low polarity. When monovacancies (N) and divacancies (B and N) were inserted into the lattice, the system was transformed into a covalent semiconductor. Finally, the electrostatic potential surface was calculated in order to explore intermolecular properties such as the charge distribution, which showed how the reactivity of the boron nitride sheets was affected by doping and orbital hybridization.

Electronic-Structures of Doped Fullerenes with Boron and Nitrogen-Atoms

Electronic Properties of C58BN Fullerenes

Relationship Between the Geometries, Electronic Structures, and Dopant Atom of C35B and C35N

BN Doping in the Realm of Two-Dimensional Fullerene Network for Unparalleled Structural, Electronic, Optical, and HER Advancements: A Cutting-Edge DFT Investigation

Carbon Doping Effects on the Electronic Structure of Boron Nitride

Band structure of boron doped carbon nanotubes

Boron and carbon in two-dimensional nitrogene structures: Heterodoping, doping, and chemical functionalization

Exciton effects on the optical properties of the substituted fullerenes C59X (X = B, N)

Structural and Electronic Properties of Heterofullerene C59P

Band Structures of TiO 2 Doped with N, C and B

DFT investigation of the geometrical and electronic structures of (X = B, N and Si) clusters

Structural and electronic properties of fluorinated boron nitride nanotubes.

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Geometries, electronic states, and spectroscopic properties of nitrogen-doped fullerene fragment C10N2(II) and its ions.

Geometries And Electronic Structures Of Nitrogen-Doped Fullerene Fragment C10n2(I) And Its Ions

Structural stability, electronic and mechanical properties of nitrogen and boron doped fluorinated diamane

Dft Investigation Of The Geometrical And Electronic Structures Of C35x (X = B, N And Si) Clusters

Influence of point defects on the electronic properties of boron nitride nanosheets

Structural and Electronic Properties of S-doped Fullerene C58: Where is the S Atom Situated?

Geometric and Electronic Structures of Metal-Substituted Fullerenes C59M (m=fe, Co, Ni, and Rh)

Geometric and electronic structures of metal-substitutional fullerene C59Sm and metal-exohedral fullerenes C60Sm.