Abstract:The study of carbon-based nanostructured materials is a highly active research field, that has made significant progress in the study of twodimensional materials and nanotechnology. The interest in these materials is mainly attributed to the fascinating properties they exhibit, as seen in the case of graphene as a 2D material, as well as emergence on numerous novel 2D materials and their heterostructures. Additionally, there is important interest in systems such as 2D quantum dots. Therefore, this work focuses on the systematic study of graphene quantum dots of various sizes, all within the framework of first-principles density functional theory. We started with the simplest graphene quantum dot (GQD) structure, benzene (C6H6), which consist of six carbon atoms passivated with hydrogen atoms. We then increased its size by adding more aromatic rings, resulting in the following GQD configurations: C24H12, C54H18, C96H24, C150H30 and C216H36. We report the density of states (DOS) and the imaginary part of the dielectric function (ε2) for the system, analyzing both the pristine configuration and the effect of both single and double (boron, nitrogen and silicon, denoted as Sa). The double substitutional atom study was done considering random, ortho-, meta-, and para-director positions just for the C94H24Sa2 GQD. In general, we can conclude that as the GQD increases in size, the HOMO-LUMO energy decreases. Furthermore, it is observed that boron and nitrogen exhibit their expected n-, and p-type doping characteristics, but this differs between single and double Sa substitutions. Additionally, the imaginary part of the dielectric function is highly sensitive to the positions of single and double substitutional atoms, as well as the polarization of incident light. Therefore, we suggest that these differences can be used to clearly determinate the type of substitutional atoms and their positions from optical measurements.

DFT investigation of the geometrical and electronic structures of (X = B, N and Si) clusters

Dft Investigation Of The Geometrical And Electronic Structures Of C35x (X = B, N And Si) Clusters

Relationship Between the Geometries, Electronic Structures, and Dopant Atom of C35B and C35N

First-Principles Studies on Pure and Doped C-32 Clusters

Theoretical Studies of C_nSi(n=35,36)

DFT formalism studies on the structural and electronic properties of hexagonal graphene quantum dot with B, N and Si substitutional impurities

Lowest-energy Endohedral Fullerene Structures of Si{sub N} (30{<=}N{<=}39) Clusters by Density Functional Calculations

Relativistic Computational Investigation: the Geometries and Electronic Properties of Tasin+ (N=1-13, 16) Clusters

Electronic-Structures of Doped Fullerenes with Boron and Nitrogen-Atoms

First-principles Study of Structural Evolution of Medium-Sized SiN Clusters (41 N 50) Within Stuffed Fullerene Cages

Lowest-Energy Endohedral Fullerene Structures of Si-N (30 <= N <= 39) Clusters by Density Functional Calculations

Structural and Electronic Properties of TaSi(n) (N=1-13) Clusters: a Relativistic Density Functional Investigation.

Doping Induced Anisotropic Growth in C60.

DFT Studies on the Electronic Structure of C_(36)(D_(6h) Symmetry) and Its Derivatives

Electronic-Structures And Stability Of Si-60 And C-60-At-Si-60 Clusters

Determination of Ground State Structures of Sn x − (x = 21‐35) Clusters

Semiempirical Calculations on Heterofullerene C59si: Structural and Electronic Localization

Structural evolution and electronic properties of pure and semiconductor atom doped in clusters: Inn - , Inn Si- , and Inn Ge- (n = 3-16)

Interaction of C59si with Si Based Clusters: A Study of Janus Nanostructures

DFT study on structure and stability of isomers of C_(48) fullerene

Theoretical study on C100 fullerenes and C96X4 (X=N, P, B, Si)