Electronic and transport properties of a biased multilayer hexagonal boron nitride

K. Tang,Z. Y. Ni,Q. H. Liu,R. G. Quhe,Q. Y. Zheng,J. X. Zheng,R. X. Fei,Z. X. Gao,J. Lu
DOI: https://doi.org/10.1140/epjb/e2012-30236-6
2012-01-01
The European Physical Journal B
Abstract:We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed ( E 0 ) required to close the band gap decreases with the increasing N and can be approximated by E 0 = 3.2 / ( N − 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.
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