Abstract:The monolayer arsenic in the puckered honeycomb structure was recently predicted to be a stable two-dimensional layered semiconductor and therefore named arsenene. Unfortunately, it has an indirect band gap, which limits its practical application. Using first-principles calculations, we show that the band gaps of few-layer arsenic have an indirect-direct transition as the number of arsenic layers (n) increases from n=1 to n=2. As n increases from n=2 to infinity, the stacking of the puckered honeycomb arsenic layers forms the orthorhombic arsenic crystal (-As, arsenolamprite), which has a similar structure to the black phosphorus and also has a direct band gap. This indirect-direct transition stems from the distinct quantum-confinement effect on the indirect and direct band-edge states with different wavefunction distribution. The strain effect on these electronic states is also studied, showing that the in-plane strains can induce very different shift of the indirect and direct band edges, and thus inducing an indirect-direct band gap transition too. The band gap dependence on strain is non-monotonic, with both positive and negative deformation potentials. Although the gap of arsenene opens between As p-p bands, the spin-orbit interaction decreases the gap by only 0.02 eV, which is much smaller than the decrease in GaAs with an s-p band gap. The calculated band gaps of arsenene and e-As using the hybrid functional are 1.4 and 0.4 eV respectively, which are comparable to those of phosphorene and black phosphorus.

Effects of the Substitutions and Vacany Defects on the Stable monolayer structures of Black and Blue Arsenic Phosphorus: A First Principles Study

Electronic, Elastic, Optical and Thermal Transport Properties of Penta-Pdas2 Monolayer: First-principles Study

Indirect-direct Band Gap Transition of Two-Dimensional Arsenic Layered Semiconductors—cousins of Black Phosphorus

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Two-dimensional As1-xPx Binary Compounds: Highly Tunable Electronic Structure and Optical Properties

Lattice Thermal Conductivity of Monolayer AsP from First-Principles Molecular Dynamics

Tuning structural, electronic, and magnetic properties of black-AsP monolayer by adatom adsorptions: A first principles study

Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony

Optical Identification of Topological Defect Types in Monolayer Arsenene by First-Principles Calculation

Impact of Defect and Doping on the Structural and Electronic Properties of Monolayer Boron Phosphide

Computational Prediction of Phosphorene and Graphene-like AsP3 Monolayers

First-Principles Studies of the Electronic and Optical Properties of Two-Dimensional Arsenic-Phosphorus (2D As-P) Compounds

Transport And Optical Properties Of Single- And Bilayer Black Phosphorus With Defects

Electronic and Optical Characteristics of Phosphorus-Doped Two-Dimensional Hexagonal Boron Arsenide: The Effects of Doping Concentration and Mechanical Strain

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic

Two-Dimensional Arsenic Monolayer Sheet Predicted from First-Principles

Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Investigations on the effect of arsenic and phosphorus atomic exchange on the origin of crystal potential fluctuations in InAsP/InP epilayers