Abstract:The monolayer arsenic in the puckered honeycomb structure was recently predicted to be a stable two-dimensional layered semiconductor and therefore named arsenene. Unfortunately, it has an indirect band gap, which limits its practical application. Using first-principles calculations, we show that the band gaps of few-layer arsenic have an indirect-direct transition as the number of arsenic layers (n) increases from n=1 to n=2. As n increases from n=2 to infinity, the stacking of the puckered honeycomb arsenic layers forms the orthorhombic arsenic crystal (-As, arsenolamprite), which has a similar structure to the black phosphorus and also has a direct band gap. This indirect-direct transition stems from the distinct quantum-confinement effect on the indirect and direct band-edge states with different wavefunction distribution. The strain effect on these electronic states is also studied, showing that the in-plane strains can induce very different shift of the indirect and direct band edges, and thus inducing an indirect-direct band gap transition too. The band gap dependence on strain is non-monotonic, with both positive and negative deformation potentials. Although the gap of arsenene opens between As p-p bands, the spin-orbit interaction decreases the gap by only 0.02 eV, which is much smaller than the decrease in GaAs with an s-p band gap. The calculated band gaps of arsenene and e-As using the hybrid functional are 1.4 and 0.4 eV respectively, which are comparable to those of phosphorene and black phosphorus.

Indirect-direct Band Gap Transition of Two-Dimensional Arsenic Layered Semiconductors—cousins of Black Phosphorus

Arsenene: Two-dimensional buckled and puckered honeycomb arsenic systems

Effects of the Substitutions and Vacany Defects on the Stable monolayer structures of Black and Blue Arsenic Phosphorus: A First Principles Study

Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Electronic structures and optical properties of arsenene and antimonene under strain and an electric field

Two-dimensional As1-xPx Binary Compounds: Highly Tunable Electronic Structure and Optical Properties

Two-Dimensional Arsenic Monolayer Sheet Predicted from First-Principles

Strain Engineering Band Gap, Effective Mass and Anisotropic Dirac-like Cone in Monolayer Arsenene

Black Arsenic: A Layered Semiconductor with Extreme in-plane Anisotropy

Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Bandgap opening in layered gray arsenic alloy

Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Electrically tunable optical properties of few layers black arsenic phosphorus.

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

Electrically tunable optical properties of few-layer black arsenic phosphorus

2D Layered Black Arsenic-Phosphorus Materials: Synthesis, Properties, and Device Applications

The Phosphorene Under The External Electronic Field And Strain

Puckered Arsenene: A Promising Room-Temperature Thermoelectric Material from First-Principles Prediction

Unusual Electronic Structure of Few-Layer Grey Arsenic: A Computational Study