Abstract:In-plane integration of various two-dimensional materials has recently emerged as an exciting approach to the tailoring of desired properties for novel nanoelectronic devices. Type-II lateral heterostructure (LHS) semiconductors with direct bandgap are urgently desired in photovoltaic, photocatalytic and optoelectronic devices. In this work, we design novel AsmPn LHSs with excellent stability composed of blue phosphorene and arsenene along the zigzag interline. In contrast to the wide indirect band gaps of pristine blue phosphorene and arsenene, all LHSs considered here except As2P2 possess narrower, direct gaps. As2P2 is an indirect-gap semiconductor with quasi-type-II band alignment, while the other LHSs are direct-gap semiconductors and have type-II alignment with the electrons (holes) located in monolayer blue phosphorene (arsenene). In addition, it is found these LHSs have high carrier mobilities of up to 6.937 x 10(3) cm(2) V-1 s(-1). Interestingly, several attractive characteristics of BP/arsenene LHSs, including direct bandgap and high mobility, can be well preserved even if the component ratios and tensile strains are changed. As4P4 undergoes a transition from type-II to type-I-like band alignment at epsilon = 8% when we apply tensile strain along the x direction, while a transition from type-II to type-I alignment is observed at epsilon = 6% if the tensile strain is applied along the y direction. Furthermore, we have found that the energy gaps of LHSs can be effectively manipulated via the strain, width and component ratio. Our predictions highlight the potential applications of blue phosphorene/arsenene LHSs in electronics, photovoltaics, optoelectronics and photocatalysis.

Bandgap opening in layered gray arsenic alloy

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Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Indirect-direct Band Gap Transition of Two-Dimensional Arsenic Layered Semiconductors—cousins of Black Phosphorus

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Unusual Electronic Structure of Few-Layer Grey Arsenic: A Computational Study

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Structural And Electronic Properties Of The V-V Compounds Isoelectronic To Gan And Isostructural To Gray Arsenic

Electrically tunable optical properties of few layers black arsenic phosphorus.

Two-dimensional As1-xPx Binary Compounds: Highly Tunable Electronic Structure and Optical Properties

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

Electrically tunable optical properties of few-layer black arsenic phosphorus

Lattice Thermal Conductivity of Monolayer AsP from First-Principles Molecular Dynamics

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

The tunable bandgap of phosphorus-arsenic alloys for mid-and long-infrared regime photodetectors

Effects of the Substitutions and Vacany Defects on the Stable monolayer structures of Black and Blue Arsenic Phosphorus: A First Principles Study

Planar penta-transition metal phosphide and arsenide as narrow-bandgap semiconductors from first principle calculations

Theoretical design of blue phosphorene/arsenene lateral heterostructures with superior electronic properties

BaAs 3 : a narrow gap 2D semiconductor with vacancy-induced semiconductor–metal transition from first principles

Al$_x$Ga$_{1-x}$As crystals with direct 2 eV band gaps from computational alchemy