Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Bilu Liu,Marianne Köpf,Ahmad Nabil Abbas,Xiaomu Wang,Qiushi Guo,Yaqi Jia,Fengnian Xia,Richard Weihrich,Frederik Bachhuber,Florian Pielnhofer,Han Wang,Rohan Dhall,Stephen B. Cronin,Mingyuan Ge,Xin Fang,Tom Nilges,Chongwu Zhou
DOI: https://doi.org/10.1002/adma.201501758
IF: 29.4
2015-01-01
Advanced Materials
Abstract:New layered anisotropic infrared semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties are introduced. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into the long-wavelength infrared regime and cannot be readily reached by other layered materials.
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