Abstract:Black arsenic phosphorus (b-AsP), as one kind of novel two-dimensional (2D) materials, bridges the band gap between black phosphorus and graphene. Thanks to its great advantages, including high carrier mobility, excellent in-plane anisotropy, and broad tunability band gap, b-AsP has aroused great interest in fields of photonics and photoelectronics. In this paper, ultrathin 2D b-AsP nanomaterials were fabricated by the liquid-phase exfoliation method, and their strong broadband linear and nonlinear absorptions were characterized by ultraviolet–visible–infrared and Z-scan technology. The experimental determination of the nonlinear absorption coefficient and low saturation intensity of b-AsP were −0.23 cm/GW and 3.336 GW/cm2, respectively. Based on density functional theory, the partial charge density and band structure at the conduction band minimum and valence band maximum were calculated, which further proves the excellent optical properties of 2D b-AsP. By first using 2D b-AsP as a novel saturable absorber in both erbium-doped and thulium-doped fiber lasers, mode-locked soliton pulses can stably operate at 1.5 and 2 μm. The laser pulses generated by 2D b-AsP possess higher stability to resist self-splitting than those generated by other 2D material-based mode-lockers. These experimental results highlight that 2D b-AsP has great application potential as a novel optical material in ultrafast photonics from near- to mid-infrared regimes.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c12408?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c12408</a>.Details of crystal growth; preparation and characterization of 2d B-Asp nanosheets; characterization; Z-scan; all-fiber laser systems; and Leff on 2d b-Asp at each wavelength (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12408/suppl_file/am0c12408_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Properties and photodetector applications of two-dimensional black arsenic phosphorus and black phosphorus

Electrically tunable optical properties of few layers black arsenic phosphorus.

Electrically tunable optical properties of few-layer black arsenic phosphorus

2D Layered Black Arsenic-Phosphorus Materials: Synthesis, Properties, and Device Applications

Two-Dimensional Black Arsenic Phosphorus for Ultrafast Photonics in Near- and Mid-Infrared Regimes

Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

Black Arsenic-Phosphorus Nanosheets for Highly Responsive Photodetection and Dual-Wavelength Ultrafast Pulse Generation at Telecommunication Bands

Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

The electronic structure, mechanical flexibility and carrier mobility of black arsenic-phosphorus monolayers: a first principles study.

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices*

High-performance photodetection based on black arsenic utilizing the photoconductive effect

Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous

Photodetecting and light-emitting devices based on two-dimensional materials*

Optical Properties of Black Phosphorus

Highly Efficient Silicon Photonic Microheater Based on Black Arsenic–Phosphorus

Tunable electronic and optoelectronic characteristics of two-dimensional β-AsP monolayer: A first-principles study

Optical Properties of Two-Dimensional Black Phosphorus

Highly Efficient Silicon Photonic Microheater Based on Black Arsenic-Phosphorus

Black Phosphorus Junctions and Their Electrical and Optoelectronic Applications

Recent Advances in Two-Dimensional Materials in Infrared Photodetectors(invited)