In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

Mianzeng Zhong,Haotong Meng,Sijie Liu,Huai Yang,Wanfu Shen,Chunguang Hu,Juehan Yang,Zhihui Ren,Bo Li,Yunyan Liu,Jun He,Qinglin Xia,Jingbo Li,Zhongming Wei

DOI: https://doi.org/10.1021/acsnano.0c09357

IF: 17.1

2020-12-17

ACS Nano

Abstract:Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the in - plane optical and electrical anisotropic properties of two - dimensional black arsenic (b - As). Specifically, through experimental and theoretical research, the researchers systematically analyzed these properties of few - layer black arsenic materials in the hope of discovering their potential application value in multi - functional nano - electronic and optoelectronic devices. The main objectives of the research include:

1. **Determining crystal orientation**: The researchers developed a simple method to identify the orientation of black arsenic crystals, which is crucial for understanding and utilizing its anisotropic properties.
2. **Measuring carrier mobility**: The researchers measured the maximum mobilities of electrons and holes. They found that the maximum electron mobility in the in - plane armchair direction (AC direction) is approximately 451.5 cm²V⁻¹s⁻¹, and the maximum hole mobility is approximately 406.6 cm²V⁻¹s⁻¹, which are approximately 2.68 times and 1.79 times higher than the minimum values in the zigzag direction (ZZ direction), respectively.
3. **Studying anisotropic conductivity**: Through angle - dependent electrical transport measurements, the researchers found that the maximum in - plane electrical conductivity anisotropy ratio of black arsenic is approximately 1.47.
4. **Optical anisotropy**: The researchers used polarized - resolved optical microscopy (PROM) and azimuth - dependent reflectance difference microscopy (ADRDM) techniques to confirm the in - plane optical anisotropy of black arsenic.

These research results not only help to understand the physical properties of black arsenic but also provide a theoretical and experimental basis for its application in high - performance nano - electronic and optoelectronic devices.