In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications

Yusi Yang,Shun-Chang Liu,Zongbao Li,Ding-Jiang Xue,Jin-Song Hu

DOI: https://doi.org/10.1039/d0cc04476h

IF: 4.9

2021-01-01

Chemical Communications

Abstract:In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.

chemistry, multidisciplinary

What problem does this paper attempt to address?

In‐Plane Optical Anisotropy of Low‐Symmetry 2D GeSe

Yusi Yang,Shun-Chang Liu,Yang Wang,Mingsheng Long,Chen-Min Dai,Shiyou Chen,Bo Zhang,Zhe Sun,Zhaoyang Sun,Chunguang Hu,Shishu Zhang,Lianming Tong,Gengmin Zhang,Ding-Jiang Xue,Jin-Song Hu

DOI: https://doi.org/10.1002/adom.201801311

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:As a new member of 2D materials, GeSe has attracted considerable attention recently due to its fascinating in-plane anisotropic vibrational, electrical, and optical properties originating from the low-symmetry crystal structure. Among these anisotropic properties, the anisotropic optical property, as a new degree of freedom to manipulate optoelectronic properties in 2D materials, is of great importance for practical applications. However, the fundamental understanding of the optical anisotropy of GeSe is still under exploration, severely restricting its utility in polarization-sensitive optical systems. Here, a systematic study about the in-plane optical anisotropy of GeSe is reported, including its anisotropic optical absorption, reflection, extinction, and refraction. The anisotropic band structure of GeSe is experimentally observed for the first time through angle-resolved photoemission spectroscopy, explaining the origin of the optical anisotropy. The anisotropic reflection and refraction of GeSe are further directly visualized through the angle-dependent optical contrast of GeSe flakes by azimuth-dependent reflectance difference microscopy and polarization-resolved optical microscopy, respectively. Finally, GeSe-based photodetectors exhibit a polarization-sensitive photoresponsivity due to the intrinsic linear dichroism. This study provides fundamental information for the optical anisotropy of GeSe, forcefully stimulating the exploration of novel GeSe-based optical and optoelectronic applications.
Synthesis Of Low-Symmetry 2d Ge(1-X)Snxse2 Alloy Flakes With Anisotropic Optical Response And Birefringence

Yijun Liu,Minghui Wu,Zhaoyang Sun,Shengxue Yang,Chunguang Hu,Li Huang,Wanfu Shen,Bin Wei,Zhongchang Wang,Shiqi Yang,Yu Ye,Yan Li,Chengbao Jiang

DOI: https://doi.org/10.1039/c9nr07820g

IF: 6.7

2019-01-01

Nanoscale

Abstract:Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge(1-x)SnxSe2 (x = 0-1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe2, x = 0) to 1.90 eV (SnSe2, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge(1-x)SnxSe2 alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.
In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

Mianzeng Zhong,Haotong Meng,Sijie Liu,Huai Yang,Wanfu Shen,Chunguang Hu,Juehan Yang,Zhihui Ren,Bo Li,Yunyan Liu,Jun He,Qinglin Xia,Jingbo Li,Zhongming Wei

DOI: https://doi.org/10.1021/acsnano.0c09357

IF: 17.1

2020-12-17

ACS Nano

Abstract:Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Recent advances in anisotropic two-dimensional materials and device applications

Jinlai Zhao,Dingtao Ma,Cong Wang,Zhinan Guo,Bin Zhang,Jianqing Li,Guohui Nie,Ni Xie,Han Zhang

DOI: https://doi.org/10.1007/s12274-020-3018-z

IF: 9.9

2020-10-23

Nano Research

Abstract:Two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), black phosphorus (BP), MXene and borophene, have aroused extensive attention since the discovery of graphene in 2004. They have wide range of applications in many research fields, such as optoelectronic devices, energy storage, catalysis, owing to their striking physical and chemical properties. Among them, anisotropic 2D material is one kind of 2D materials that possess different properties along different directions caused by the intrinsic anisotropic atoms' arrangement of the 2D materials, mainly including BP, borophene, low-symmetry TMDs (ReSe2 and ReS2) and group IV monochalcogenides (SnS, SnSe, GeS, and GeSe). Recently, a series of new devices has been fabricated based on these anisotropic 2D materials. In this review, we start from a brief introduction of the classifications, crystal structures, preparation techniques, stability, as well as the strategy to discriminate the anisotropic characteristics of 2D materials. Then, the recent advanced applications including electronic devices, optoelectronic devices, thermoelectric devices and nanomechanical devices based on the anisotropic 2D materials both in experiment and theory have been summarized. Finally, the current challenges and prospects in device designs, integration, mechanical analysis, and micro-/nano-fabrication techniques related to anisotropic 2D materials have been discussed. This review is aimed to give a generalized knowledge of anisotropic 2D materials and their current devices applications, and thus inspiring the exploration and development of other kinds of new anisotropic 2D materials and various novel device applications.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Anisotropic Optical Properties of Layered Germanium Sulfide

Dezhi Tan,Hong En Lim,Feijiu Wang,Nur Baizura Mohamed,Shinichiro Mouri,Koirala Sandhaya,Wenjing Zhang,Yuhei Miyauchi,Mari Ohfuchi,Kazunari Matsuda

DOI: https://doi.org/10.48550/arXiv.1606.06953

2016-06-20

Materials Science

Abstract:Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in GeS at room temperature. Moreover, determination of the polarization dependent characteristics of the PL and absorption reveals an anisotropic optical transition near the band edge of GeS, which is also supported by the density functional theory calculations. This anisotropic layered GeS presents the opportunities for the discovery of new physical phenomena and will find applications that exploit its anisotropic properties.
Anisotropic Optical and Mechanical Properties in Few‐Layer GaPS4

Shuai Liu,Xuwei Cui,Qinghua Zhang,Wanfu Shen,JianTao Du,Ting Lin,Yunkun Wang,Minghui Wu,Lin Gu,Yunan Gao,Chunguang Hu,Luqi Liu,Shengxue Yang,Chengbao Jiang

DOI: https://doi.org/10.1002/adom.202202288

IF: 9

2023-01-01

Advanced Optical Materials

Abstract:Low‐symmetry 2D materials have received tremendous attention due to their anisotropic optical, electrical, and mechanical properties and viable candidates for polarized photodetectors, anisotropic field‐effect transistors, and nanomechanical systems. Here, an interesting low‐symmetry 2D material (GaPS4) is reported and its in‐plane anisotropic structure, optical, and mechanical properties are investigated. The polarized Raman and absorption spectra prove the sensitivity of GaPS4 to crystalline orientation and linear dichroism. The experimental results of azimuth‐dependent reflectance difference microscopy can visually reveal the in‐plane optical anisotropy of GaPS4 flakes. Moreover, an interesting pressurized bubble method is designed to verify the anisotropic mechanical properties of GaPS4 flakes and saddle‐like bubble devices of GaPS4 are successfully fabricated. The saddle‐like bubble devices exhibit visual anisotropic deflection variations along the orthogonal direction. Kelvin probe force microscope enables the direct identifying of the surface potential distribution of bubble devices under strain. Interest would be excited in the anisotropic optical and mechanical properties and relevant device applications of low‐symmetry 2D materials.
Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus

Weilin Chen,An Chen,Ruan Zhang,Jianmin Zeng,Lihui Zhang,Mengyue Gu,Chaofan Wang,Mingyuan Huang,Yanbo Guo,Hongxiao Duan,Chunguang Hu,Wanfu Shen,Baoxin Niu,Kenji Watanabe,Takashi Taniguchi,Jinying Zhang,Jinjin Li,Xinghan Cai,Gang Liu

DOI: https://doi.org/10.1021/acs.nanolett.3c02951

IF: 10.8

2023-12-06

Nano Letters

Abstract:Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Weak Interlayer Interaction in 2D Anisotropic GeSe2

Yusi Yang,Xia Wang,Shun-Chang Liu,Zongbao Li,Zhaoyang Sun,Chunguang Hu,Ding-Jiang Xue,Gengmin Zhang,Jin-Song Hu

DOI: https://doi.org/10.1002/advs.201801810

IF: 15.1

2019-01-01

Advanced Science

Abstract:Germanium diselenide (GeSe2) has recently emerged as a new member of in-plane anisotropic 2D materials, notable for its wide bandgap of 2.74 eV, excellent air stability, and high performance in polarization-sensitive photodetection. However, the interlayer interaction in GeSe2 has never been reported, which usually plays an important role in layer-number-dependent physical properties. Here, the interlayer coupling in GeSe2 is systematically investigated from theory to experiment. Unexpectedly, all of density functional theory (DFT) calculations about layer-dependent band structures, cleavage energy, binding energy, translation energy, and interlayer differential charge density demonstrate the much weaker interlayer interaction in GeSe2 when compared with black phosphorus (BP). Furthermore, both thicknessdependent and temperature-dependent Raman spectra of GeSe2 flakes, which exhibit no detectable changes of Raman peaks with the increase in thickness and a small first-order temperature coefficient of-0.0095 cm(-1) K-1, respectively, experimentally confirm the weakly coupled layers in GeSe2. The results establish GeSe2 as an unusual member of in-plane anisotropic 2D materials with weak interlayer interaction.
Theoretical prediction of novel two-dimensional auxetic material SiGeS and study of its electronic and optical properties

Yu-Jie Zhu,Tao Jiang,Xiao-Juan Ye,Chun-Sheng Liu,Zhu Yu-Jie,Jiang Tao,Ye Xiao-Juan,Liu Chun-Sheng,

DOI: https://doi.org/10.7498/aps.71.20220407

IF: 0.906

2022-01-01

Acta Physica Sinica

Abstract:Two-dimensional (2D) materials have aroused tremendous interest due to their great potential in the applications in electronic, optical, and mechanical devices. We theoretically design a new 2D material SiGeS by regularly arranging the Si-S-Ge skeleton of SiH 3 SGeH 3 . Based on first-principles calculation, the structure, stability, electronic properties, mechanical properties, and optical properties of SiGeS are systematically investigated. Monolayer SiGeS is found to be energetically, dynamically, and thermally stable. Remarkably, SiGeS displays a unique negative Poisson's ratio. Besides, SiGeS is an indirect-semiconductor with a band gap of 1.95 eV. The band gap could be modulated effectively by applying external strains. An indirect-to-direct band gap transition could be observed when the tensile strain along x axial or biaxial is greater than +3%, which is highly desirable for applications in optical and semiconductor technology. Moreover, pristine SiGeS has a high absorption coefficient (~10 5 cm -1 ) from visible to the ultraviolet region. Under tensile strain along x, the absorption edge of SiGeS has a red shift, which makes it cover the whole region of solar spectrum. These intriguing properties render SiGeS a competitive multifunctional material for nanomechanic and optoelectronic applications.

physics, multidisciplinary
Anisotropic effects in two-dimensional materials

Alexander N. Rudenko,Mikhail I Katsnelson

DOI: https://doi.org/10.1088/2053-1583/ad64e1

IF: 6.861

2024-07-19

2D Materials

Abstract:Among a huge variety of known two-dimensional materials, some of them have anisotropic crystal structures; examples include so different systems as a few-layer black phosphorus (phosphorene), beryllium nitride BeN , van der Waals magnet CrSBr, rhenium dichalcogenides ReX . As a consequence, their optical and electronic properties turn out to be highly anisotropic as well. In some cases, the anisotropy results not just in a smooth renormalization of observable properties in comparison with the isotropic case but in the appearance of dramatically new physics. The examples are hyperbolic plasmons and excitons, strongly anisotropic ordering of adatoms at the surface of two-dimensional or van der Waals materials, essential change of transport and superconducting properties. Here, we present a systematic review of electronic structure, transport and optical properties of several representative groups of anisotropic two-dimensional materials including semiconductors, anisotropic Dirac and semi-Dirac materials, as well as superconductors.

materials science, multidisciplinary
Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.

Yusi Yang,Shun-Chang Liu,Wei Yang,Zongbao Li,Yang Wang,Xia Wang,Shishu Zhang,Yun Zhang,Mingsheng Long,Gengmin Zhang,Ding-Jiang Xue,Jin-Song Hu,Li-Jun Wan

DOI: https://doi.org/10.1021/jacs.8b01234

IF: 15

2018-01-01

Journal of the American Chemical Society

Abstract:In-plane anisotropic layered materials such as black phosphorus (BP) have emerged as an important class of two-dimensional (2D) materials that bring a new dimension to the properties of 2D materials, hence providing a wide range of opportunities for developing conceptually new device applications. However, all of recently reported anisotropic 280 2D materials are relatively narrow-bandgap semiconductors (< 2 eV), and there has been no report about this type of materials with wide bandgap, restricting the relevant applications such as polarization-sensitive photodetection in short wave region. Here we present a new member of the family, germanium diselenide (GeSe2) with a wide bandgap of 2.74 eV, and systematically investigate the in-plane anisotropic structural, vibrational, electrical, and optical properties from theory to experiment. Photodetectors based on GeSe2 exhibit a highly polarization-sensitive photoresponse in short wave region due to the optical absorption anisotropy induced by in-plane anisotropy in crystal structure. Furthermore, exfoliated GeSe2 flakes show an outstanding stability in ambient air which originates from the high activation energy of oxygen chemisorption on GeSe2 (2.12 eV) through our theoretical calculations, about three times higher than that of BP (0.71 eV). Such unique in-plane anisotropy and wide bandgap, together with high air stability, make GeSe2 a promising candidate for future 2D optoelectronic applications in short wave region.
Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

Xu Li,Haiyang Liu,Congming Ke,Weiqing Tang,Mengyu Liu,Feihong Huang,Yaping Wu,Zhiming Wu,Junyong Kang

DOI: https://doi.org/10.1002/lpor.202100322

2021-10-27

Abstract:Anisotropic 2D materials are promising building blocks for future photonic and optoelectronic devices due to their low structural symmetry and in‐plane optical anisotropy. This review systematically summarizes the crystalline structure, growth dynamics, optical anisotropy and their modulation strategies, and the corresponding photonic applications for emerging anisotropic 2D materials. First, the physical properties and crystalline structures of typical anisotropic 2D materials are briefly introduced. After that, special attention is paid to the growth mechanism of low‐symmetry lattices, where the competition between different growth modes determines the crystal morphologies. Then, the physical principles of anisotropic optical absorption, photoluminescence, Raman scattering, photodetection, and nonlinear response are discussed based on recent scientific advances. The discussion on the techniques to modify the intrinsic in‐plane anisotropy, along with the possibility of introducing optical anisotropy to the isotropic materials, add a new degree of freedom to the control over their optical properties. The review of application prospects also helps bridge the gap between the scientific exploration of novel anisotropic materials and the development of polarization‐sensitive photonic devices. The discussions in this review will push forward the scientific frontier in the crystalline growth and anisotropy control of anisotropic 2D materials. The emerging low‐symmetry 2D materials houses intriguing optical anisotropy. By engaging a variety of modulation techniques, such as twist angle, dimension, and strain, such optical anisotropy can be flexibility tuned. This pioneering research have also paved ways to the development of various photonic and optoelectronic devices including polarization‐sensitive photodetectors, waveplates, and light sources.

physics, condensed matter,optics, applied
In-plane anisotropic two-dimensional materials for twistronics

Hangyel Kim,Changheon Kim,Yeonwoong Jung,Namwon Kim,Jangyup Son,Gwan-Hyoung Lee

DOI: https://doi.org/10.1088/1361-6528/ad2c53

IF: 3.5

2024-02-24

Nanotechnology

Abstract:In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this review paper, we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and T d phases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

Shuai Yang,Fengrui Sui,Yucheng Liu,Ruijuan Qi,Xiaoyu Feng,Shangwei Dong,Pingxiong Yang,Fangyu Yue

DOI: https://doi.org/10.1039/d3nr02678g

IF: 6.7

2023-01-01

Nanoscale

Abstract:Low-symmetric GeTe semiconductor has attracted wide attention due to its excellent optical and thermal properties, but few researches are accessible about the in-plane optical anisotropic property that is crucial for...

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
2D NbOI 2 : A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties

Yuqiang Fang,Fakun Wang,Ruiqi Wang,Tianyou Zhai,Fuqiang Huang

DOI: https://doi.org/10.1002/adma.202101505

IF: 29.4

2021-06-06

Advanced Materials

Abstract:Exploring in-plane anisotropic 2D materials is of great significance to the fundamental studies and further development of polarizationsensitive optoelectronics. Herein, chiral niobium oxide diiodide (NbOI2) is introduced into the intriguing anisotropic 2D family with the experimental demonstration of anisotropic optical and electrical properties. 2D NbOI2 crystals exhibit highly anisotropic dispersed band structures around the Fermi surface and strong in-plane anisotropy of phonon vibrations owing to the different bonding modes of Nb atoms along the b- and c-axes. Consequently, the anisotropic factors of optical absorbance and photoresponsivity in 2D NbOI2 crystals reach up to 1.75 and 1.7, respectively. These anisotropic properties make 2D NbOI2 an interesting platform for novel polarization-sensitive optoelectronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
2D V‐V Binary Materials: Status and Challenges

Shiying Guo,Yupeng Zhang,Yanqi Ge,Shengli Zhang,Haibo Zeng,Han Zhang

DOI: https://doi.org/10.1002/adma.201902352

IF: 29.4

2019-08-01

Advanced Materials

Abstract:2D phosphorene, arsenene, antimonene, and bismuthene, as a fast‐growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group‐VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V‐V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V‐V binary materials is given.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Anisotropic Photoresponse of the Ultrathin GeSe Nanoplates Grown by Rapid Physical Vapor Deposition.

Jinyang Liu,Yuhan Zhou,Yue Lin,Mingling Li,Hongbing Cai,Yichun Liang,Mengyu Liu,Zhigao Huang,Fachun Lai,Feng Huang,Weifeng Zheng

DOI: https://doi.org/10.1021/acsami.8b19306

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Anisotropic materials, especially two-dimensional (2D) layered materials formed by van der Waals force (vdW) with low-symmetry, have become a scientific hot-spot because their electrical, optical, and thermoelectric properties are highly polarization dependent. The 2D GeSe, a typical anisotropic-layered orthorhombic structure and narrow bandgap (1.1-1.2 eV) semiconductor, potentially meets these demands. In this report, the ultrathin elongated hexagonal GeSe nanoplates were successfully synthesized by the rapid physical vapor deposition method developed here. The ultrathin elongated hexagonal GeSe nanoplates have a zigzag edge in the long edge and an armchair edge in the short edge. In addition, the typical Raman mode exhibited 90° periodic vibration, having its maximum intensity between the zigzag direction or the zigzag and armchair direction, indicating an anisotropic electron-phonon interaction. Furthermore, the field effect transistor devices based on the elongated hexagonal GeSe nanoplates were constructed and exhibited the p-type semiconducting behavior with a high photoresponse characteriscs. Finally, the polarized sensitive photocurrent was identified, further revealing the intrinsically anisotropy of the GeSe nanoplate. The results illustrated here may give a useful guidance to synthesize the 2D-layered anisotropic nanomaterials and further advance the development of the polarized photodetector.
Advances in Two-Dimensional Materials for Optoelectronics Applications

Mingyue Zhao,Yurui Hao,Chen Zhang,Rongli Zhai,Benqing Liu,Wencheng Liu,Cong Wang,Syed Hassan Mujtaba Jafri,Aamir Razaq,Raffaello Papadakis,Jiangwei Liu,Xiaoling Ye,Xiaoxiao Zheng,Hu Li

DOI: https://doi.org/10.3390/cryst12081087

IF: 2.7

2022-08-05

Crystals

Abstract:The past one and a half decades have witnessed the tremendous progress of two-dimensional (2D) crystals, including graphene, transition-metal dichalcogenides, black phosphorus, MXenes, hexagonal boron nitride, etc., in a variety of fields. The key to their success is their unique structural, electrical, mechanical and optical properties. Herein, this paper gives a comprehensive summary on the recent advances in 2D materials for optoelectronic approaches with the emphasis on the morphology and structure, optical properties, synthesis methods, as well as detailed optoelectronic applications. Additionally, the challenges and perspectives in the current development of 2D materials are also summarized and indicated. Therefore, this review can provide a reference for further explorations and innovations of 2D material-based optoelectronics devices.

materials science, multidisciplinary,crystallography
Perspectives of 2D Materials for Optoelectronic Integration (Adv. Funct. Mater. 14/2022)

Junru An,Xingyu Zhao,Yanan Zhang,Mingxiu Liu,Jian Yuan,Xiaojuan Sun,Zhiyu Zhang,Bin Wang,Shaojuan Li,Dabing Li

DOI: https://doi.org/10.1002/adfm.202270086

IF: 19

2022-04-01

Advanced Functional Materials

Abstract:2D MaterialsIn article number 2110119, Bin Wang, Shaojuan Li, Dabing Li, and co‐workers discuss the state of the art of using 2D materials in optoelectronic integration. They also provide general advice for future development in this field.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications

In‐Plane Optical Anisotropy of Low‐Symmetry 2D GeSe

Synthesis Of Low-Symmetry 2d Ge(1-X)Snxse2 Alloy Flakes With Anisotropic Optical Response And Birefringence

In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic

Recent advances in anisotropic two-dimensional materials and device applications

Anisotropic Optical Properties of Layered Germanium Sulfide

Anisotropic Optical and Mechanical Properties in Few‐Layer GaPS4

Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus

Weak Interlayer Interaction in 2D Anisotropic GeSe2

Theoretical prediction of novel two-dimensional auxetic material SiGeS and study of its electronic and optical properties

Anisotropic effects in two-dimensional materials

Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.

Review of Anisotropic 2D Materials: Controlled Growth, Optical Anisotropy Modulation, and Photonic Applications

In-plane anisotropic two-dimensional materials for twistronics

Anisotropy and thermal properties in GeTe semiconductor by Raman analysis

2D NbOI 2 : A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties

2D V‐V Binary Materials: Status and Challenges

Anisotropic Photoresponse of the Ultrathin GeSe Nanoplates Grown by Rapid Physical Vapor Deposition.

Advances in Two-Dimensional Materials for Optoelectronics Applications

Perspectives of 2D Materials for Optoelectronic Integration (Adv. Funct. Mater. 14/2022)