In-plane anisotropic two-dimensional materials for twistronics

Hangyel Kim,Changheon Kim,Yeonwoong Jung,Namwon Kim,Jangyup Son,Gwan-Hyoung Lee
DOI: https://doi.org/10.1088/1361-6528/ad2c53
IF: 3.5
2024-02-24
Nanotechnology
Abstract:In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this review paper, we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and T d phases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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