Abstract:2D layered germanium selenide (GeSe) material possesses in‐plane anisotropy because of low‐symmetry crystal structure with a new degree of freedom for enhanced optical and electronic properties. However, their systematic vibrational and electronics properties are still under the scope to study. Herein, the vibrational properties of GeSe sheets are studied by Raman spectroscopy. Whereas, the temperature‐dependent electronic band structure is studied using angle‐resolved photoemission spectroscopy (ARPES) combined with density functional theory calculations. Moreover, the field‐effect transistor (FET) is fabricated on a few‐layer GeSe with high performance. The vibrational modes B3g1 and Ag1 demonstrates linear softening as the temperature increases, with temperature coefficient value associated by anharmonic phonon–phonon/electron coupling. Besides, the enhanced dielectric screening effect of long‐range Coulomb and interlayer interaction is observed from bulk to monolayer. Similarly, ARPES results further show Fermi level movement toward the valance band as increased temperature represents hole doping to pining the Fermi level, which indicates superior carrier concentration for electronic properties. The fabricated FET device on six layers GeSe exhibits high carrier mobility of 52.89 cm2 V−1 s−1 with an on/off ratio above 4 × 105 at room temperature, while it decreased below the room temperature. Our results provide the important figure of merit for GeSe‐based novel nanoelectronic and thermoelectric devices. The temperature dependent Raman study of a few layers germanium selenide (GeSe) shows linear softening due to an anharmonic phonon–phonon/electron coupling, while, the Fermi level of GeSe shifting toward the conduction band as the temperature increases. This can show the increased carrier concentration in GeSe, which can further enhance the device performance of the GeSe sheet with high mobility.

Weak Interlayer Interaction in 2D Anisotropic GeSe2

Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

In‐Plane Optical Anisotropy of Low‐Symmetry 2D GeSe

Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region.

Anisotropic Optical Properties of Layered Germanium Sulfide

Two-Dimensional Gese As an Isostructural and Isoelectronic Analogue of Phosphorene: Sonication-Assisted Synthesis, Chemical Stability, and Optical Properties

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Anisotropic Spin Transport and Strong Visible-Light Absorbance in Few-Layer SnSe and GeSe

GeAs_2: A Ⅳ-Ⅴ Group 2D Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Anisotropic Photoresponse of the Ultrathin GeSe Nanoplates Grown by Rapid Physical Vapor Deposition.

Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

GeAs2: A IV–V Group Two-Dimensional Semiconductor with Ultralow Thermal Conductivity and High Thermoelectric Efficiency

Temperature Modulating Fermi Level Pinning in 2D GeSe for High‐Performance Transistor

Interlayer Interactions in Anisotropic Atomically Thin Rhenium Diselenide

First-Principles Study of the Phonon Lifetime and Low Lattice Thermal Conductivity of Monolayer γ-GeSe: A Comparative Study

Strong interlayer coupling and unusual antisite defects mediated p-type conductivity in GeP x ( x = 1, 2)

Resolving the Anisotropic Dynamical Evolution of Wide Bandgap GeSe2 Under Polarized Photoexcitation

Synthesis Of Low-Symmetry 2d Ge(1-X)Snxse2 Alloy Flakes With Anisotropic Optical Response And Birefringence

Anisotropic interfacial properties of monolayer GeSe—metal contacts

Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state