Abstract:Due to the excellent physical properties, two dimensional materials have attracted widespread attention from researchers. In this article, we discuss a transition metal dichalcogenide, ReSeS monolayer with 1T" phase, with extremely low symmetry through the first principles calculation. It belongs to the space group P1 and has Jauns structure. Due to the broken of the central inversion symmetry. Raman and infrared active modes in the vibrational spectrum no longer mutually exclusive, which has become a spectral fingerprint of this material. First principles calculation indicates that the bandgap decreases when the material has geometric deformation, and we propose two models to explain this phenomenon and provide the physical pictures. The first model requires constructing a low symmetry Wannier analytically simplify Hamiltonian to obtain 4 energy levels of mixed orbital, Then the changes of bandgap can be qualitatively described through the difference between these energy levels; The second model analyzes the variations of bandgap through the bonding or antibonding characteristics of the valence and conduction band. We point out that it is a "saturation effect", where the energy of the valence and conduction band has difficulties in further changing under the deformation, resulting in the reduction of the bandgap under both compression and tensile deformation. Meanwhile, we discuss a metallic phase of ReSeS, called 1T' phase, to explain the formation of the bandgap. Compared to the 1T" phase, it has higher symmetry. Semi-filled d-orbital bands in 1T' phases will become unstable and split into bonding and antibonding bands, leading to the opening of bandgap. This process is also known as Peierls phase transition. Finally, we calculated the effective mass of electron and the absorption spectrum. Results point out the potential of ReSeS in the preparation of electrical or optical devices.

Interlayer Interactions in Anisotropic Atomically Thin Rhenium Diselenide

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in $N$-layer ReSe$_2$ and ReS$_2$

Temperature-dependent Raman Spectroscopy Studies of the Interface Coupling Effect of Monolayer ReSe2 Single Crystals on Au Foils

Identifying the Non-Identical Outermost Selenium Atoms and Invariable Band Gaps Across the Grain Boundary of Anisotropic Rhenium Diselenide

Monolayer behaviour in bulk ReS 2 due to electronic and vibrational decoupling

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

In-plane Optical Anisotropy in ReS2 Flakes Determined by Angle-Resolved Polarized Optical Contrast Spectroscopy

Doping Modulated In-Plane Anisotropic Raman Enhancement on Layered ReS2

Anisotropy Study of Phonon Modes in ReS2 Flakes by Polarized Temperature-Dependent Raman Spectroscopy

Direct Synthesis and in Situ Characterization of Monolayer Parallelogrammic Rhenium Diselenide on Gold Foil

Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2

The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of the Monolayer Distorted 1t Diamond-Chain Structures Res2 and Rese2

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe 2

Direct Identification of Monolayer Rhenium Diselenide by an Individual Diffraction Pattern

Polarization-tuneable excitonic spectral features in the optoelectronic response of atomically thin ReS2

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics.

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe2 Atomic Layer

Salt-assisted growth and ultrafast photocarrier dynamics of large-sized monolayer ReSe<sub>2</sub>

Ultrafast Carrier Dynamic Anisotropy of Single Crystal Rhenium Disulfide Flake Based on Transient Absorption Spectroscopy