Abstract:The transition metal dichalcogenides (MoS 2 etc.) are a new class of layered materials that can be prepared in variable layer thickness down to single molecular layer. Compared with the more well‐known graphene, the monolayer version of graphite, the transition metal dichalcogenides are semiconductors and hence can be more useful in applications such as light emission or photovoltaics where an energy gap is essential. Ultra thin transition metal dichalcogenides also show interesting layer thickness dependent physical properties. For example, the semiconductor gap was found to change from indirect to direct when the layer thickness is reduced to monolayer, making monolayer MoS 2 an efficient light emitter. Here we present investigation of the dimensionality of the joint density of states involved in the interband transition in MoS 2 using angle resolved as well as angle integrated electron energy loss spectroscopy [1]. To aid the analysis, we have extended the theory of joint density of states from three‐dimensional semiconductors to low‐dimensional semiconductors. Our result and analysis shows not only that the character of the interband transition changes from indirect to direct, as the layer thickness is reduced down to monolayer, as expected, but the indirect band gap retains a three dimensional character down to the monolayer limit. This is compared with the two dimensional character found for the direct bandgap transition in the monolayer MoSe and presumably also in MoS 2. This raised a question about the condition for observing a true two dimensional electronic structrue even when the atomic structure is reduced to single molecular thickness. We will discuss physical factors might affecting the dimensionality of the electronic density‐of‐states. Our result has practical implication. For example, it is consistent with the assumption made by Castellanos‐Gomez et al. [2] when interpreting the electrostatic screening effect observed in monolayer MoS 2 , which is very different from that of graphene. Our result also can explain the sensitivity of the indirect interband transition as a function of the layer thickness and the bandgap cross‐over of few layer MoS 2 from indirect to direct.

Monolayer behaviour in bulk ReS 2 due to electronic and vibrational decoupling

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Is the electronic structure of few layer transition metal dichalcogenides always two dimensional ?

The regulation of symmetry-breaking-dependent electronic structures in ReSeS monolayer

Interlayer Interactions in Anisotropic Atomically Thin Rhenium Diselenide

Substrate-affected Lattice Structural Evolution in Compressed Monolayer ReS2

Deeply Exploring Anisotropic Evolution Toward Large-Scale Growth of Monolayer ReS2.

Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition

Polytypism and Unexpected Strong Interlayer Coupling of two-Dimensional Layered ReS2

Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides

Raman Vibrational Spectra of Bulk to Monolayer ReS2 with Lower Symmetry

Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in $N$-layer ReSe$_2$ and ReS$_2$

Strain-engineering the Anisotropic Electrical Conductance in ReS2 Monolayer

Synthesis of high-crystalline ReS<sub>2</sub> monolayers by sodium-assisted chemical vapor deposition

Unraveling the Photophysics of Liquid-Phase Exfoliated Two-Dimensional ReS2 Nanoflakes

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Electronic Structure and Optical Properties of Monolayer $ReS_2$ with Defect Controlled by Strain Engineering

Defect-assisted reversible phase transition in mono- and few-layer ReS$_2$

Electronic band structure of rhenium dichalcogenides

Robust coherent dynamics of homogeneously limited anisotropic excitons in two-dimensional layered ReS2