Abstract:The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be located at special high symmetry points. We find that both materials are indirect gap materials and that one must be careful to consider the whole Brillouin zone volume in addressing this question.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is related to the electronic band structures of rhenium disulfide (ReS₂) and rhenium selenide (ReSe₂) and their indirect band - gap characteristics. Specifically, the paper aims to: 1. **Clarify the band - gap nature of the materials**: Determine whether ReS₂ and ReSe₂ are direct - band - gap or indirect - band - gap materials. This issue has been controversial in previous studies, and different experiments and theoretical calculations have given inconsistent results. 2. **Fully understand the band structure**: Calculate the band structure within the entire Brillouin zone (BZ), rather than being limited to high - symmetry paths, in order to more accurately locate the conduction - band minimum (CBM) and valence - band maximum (VBM). This is because the band extrema of these materials are not necessarily located at high - symmetry points, which makes traditional high - symmetry - path calculations may miss crucial information. 3. **Explain the differences in experimental results**: Combine experimental data such as angle - resolved photoemission spectroscopy (ARPES), optical absorption, and electron energy - loss spectroscopy (EELS) to explain the band - gap differences observed among different research groups. For example, some experiments reported a direct band - gap, while others supported an indirect band - gap. 4. **Evaluate the impact of calculation methods**: Explore the effects of different density - functional - theory (DFT) approximations (such as LDA and GGA) and pseudopotential selections on the results of band - structure calculations. Since these materials have complex band structures and flat band distributions, the calculation results are very sensitive to the selected exchange - correlation functionals and pseudopotentials. ### Main Conclusions - **Both ReS₂ and ReSe₂ are indirect - band - gap materials**: By calculating the band structures of the entire Brillouin zone, it is found that the conduction - band minima and valence - band maxima of these two materials do not coincide, indicating that they are indirect - band - gap semiconductors. - **The positions of band extrema are complex**: The band extrema are not located at the high - symmetry points of the Brillouin zone but are distributed in specific regions in three - dimensional space. This complexity has led to differences between different experimental and theoretical results. - **The choice of calculation method is crucial**: Different DFT approximations (LDA vs GGA) and pseudopotential selections will lead to different positions of band extrema and different band - gap sizes, so calculation parameters need to be carefully selected. Through these studies, the authors hope to provide more accurate guidance for future experimental and theoretical research and promote in - depth understanding of such transition - metal dichalcogenide (TMDs) materials.

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